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NXP Semiconductors TDA8932B NXP Semiconductors TDA8932B, 8.4 Protection, ,

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TDA8932B_3 © NXP B.V. 21 June 2007. All rights reserved.

Product data sheet Rev. 03— 21 June 2007 8 of 48

NXP Semiconductors TDA8932B

Class-D audio ampliﬁer

(1)

Where:

fosc = oscillator frequency (Hz)

Rosc = oscillator resistor (on pin OSCREF) (Ω)

Table 5 summarizes how to conﬁgure the TDA8932B in master or slave conﬁguration.

For device synchronization see Section 14.6 “Device synchronization”.

8.4 Protection

The following protection is included in the TDA8932B:

•Thermal Foldback (TF)

•OverTemperature Protection (OTP)

•OverCurrent Protection (OCP)

•Window Protection (WP)

•Supply voltage protection:

–UnderVoltage Protection (UVP)

–OverVoltage Protection (OVP)

–UnBalance Protection (UBP)

•ElectroStatic Discharge (ESD)

The reaction of the device to the different fault conditions differs per protection.

Fig 5. Oscillation frequency as a function of resistor Rosc

Table 5. Master or slave conﬁguration

Conﬁguration Pin

OSCREF OSCIO

Master Rosc > 25 kΩ to VSSD(HW) output

Slave Rosc = 0 Ω; shorted to VSSD(HW) input

fosc 12.45 109

×

Rosc

----------------------------

=

350

450

550

fosc

(kHz)

250

Rosc (kΩ)

25 454030 35

001aad758

Contents

Main 1. General description 2. Features 3. Applications TDA8932B Rev. 03 21 June 2007 Product data sheet Class-D audio amplier NXP Semiconductors TDA8932B 4. Quick reference data =25 5. Ordering information = 22 V; f = 320 kHz; T 6. Block diagram Fig 1. Block diagram Product data sheet Rev. 03 21 June 2007 4 of 48 7. Pinning information TDA8932BTW TDA8932BT 7.1 Pinning Fig 2. Pin conguration SO32 Fig 3. Pin conguration HTSSOP32 8. Functional description 8.1 General 8.2 Mode selection and interfacing 8.3 Pulse width modulation frequency NXP Semiconductors TDA8932B 8.4 Protection NXP Semiconductors TDA8932B 8.4.1 Thermal Foldback (TF) 8.4.2 OverTemperature Protection (OTP) 8.4.3 OverCurrent Protection (OCP) 8.4.4 Window Protection (WP) 8.5 Diagnostic input and output 8.6 Differential inputs 8.7 Output voltage buffers 4 DIAG HVPREF. 9. Internal circuitry Table 7. Internal circuitry 1V 16 V 17 V 32 V 2 IN1P 3 IN1N 12 INREF 14 IN2N 15 IN2P 5 ENGAGE 6 POWERUP 7 CGND 8V Table 7. Internal circuitry (Continued) 9V 10 OSCREF 18 DREF 11 HVPREF 13 TEST Page 10. Limiting values 11. Thermal characteristics In accordance with the Absolute Maximum Rating System (IEC 60134). 12. Static characteristics Page 13. Dynamic characteristics =25 4 =2 = 22 V; T =2 4 =8 = 320 kHz; R =8 = 320 kHz; R 14. Application information 14.1 Output power estimation a. THD+N = 0.5 % b. THD+N = 10 % Fig 8. SE output power as a function of supply voltage a. THD+N = 0.5 % b. THD+N = 10 % Fig 9. BTL output power as a function of supply voltage 14.2 Output current limiting 14.3 Speaker conguration and impedance 14.4 Single-ended capacitor 14.5 Gain reduction 14.6 Device synchronization 14.7 Thermal behavior (printed-circuit board considerations) 14.8 Pumping effects Fig 12. SE application for reducing pumping effects 14.9 SE curves measured in reference design a. VP=22V; R Fig 14. Total harmonic distortion-plus-noise as a function of frequency Fig 13. Total harmonic distortion-plus-noise as a function of output power per channel (1) fi= 6 kHz (2) fi= 100 Hz (3) fi= 1 kHz Vi= 100 mV (RMS); Ri=0; Cse = 1000 F (1) VP= 30 V; RL=28 (2) VP= 22 V; RL=24 Vripple = 500 mV (RMS) referenced to ground; Ri=0 (shorted input) (1) VP=30V; R (2) VP=22V; R Ri=0; 20 kHz brick-wall lter AES17 (1) VP= 22 V; RL=24 (2) VP= 30 V; RL=28 Po= 1 W; CHVPREF =47F voltage = ------------------------- per channel (two channels driven) fi= 1 kHz; (1) VP= 22 V; RL=24 (2) VP= 30 V; RL=28 NXP Semiconductors TDA8932B ENGAGE Fig 23. Output power per channel as a function of time board (55 mm 45 mm) without heat sink (1) VP=22V (2) VP=26V (3) VP=29V 14.10 BTL curves measured in reference design a. VP=12V; R Fig 27. Total harmonic distortion-plus-noise as a function of frequency Fig 26. Total harmonic distortion-plus-noise as a function of output power (1) fi= 6 kHz (2) fi= 1 kHz (3) fi= 100 Hz Vi= 100 mV (RMS); Ri=0 (1) VP= 12 V; RL=4 (2) VP= 22 V; RL=8 Vripple = 500 mV (RMS) referenced to ground; Ri=0 (shorted input) (2) VP=12V; R Ri=0; 20 kHz brick-wall lter AES17 (1) RL=4; VP=12V (2) RL=8; VP=22V fi= 1 kHz (short time PO); dashed line will require board (55 mm 45 mm) without heat sink = -------------------- Fig 32. Output power as a function of time (1) VP=12V (2) VP= 13.5 V (3) VP=15V Fig 35. Power dissipation as a function of supply voltage 14.11 Typical application schematics (simplied) Fig 36. Typical simplied application diagram for 2 SE (asymmetrical supply) Fig 37. Typical simplied application diagram for 1 BTL (asymmetrical supply) Fig 38. Typical simplied application diagram for 2 SE (symmetrical supply) 15. Test information Fig 39. Typical simplied application diagram for 1 BTL (symmetrical supply) 15.1 Quality information is applicable. General Quality Specication for Integrated Circuits, SNW-FQ-611 16. Package outline Fig 40. Package outline SOT287-1 (SO32) SO32: plastic small outline package; 32 leads; body width 7.5 mm SOT287-1 Fig 41. Package outline SOT549-1 (HTSSOP32) 32 17 116 17. Soldering 17.4 Reow soldering For further information on temperature proles, refer to Application Note 18. Abbreviations AN10365 Surface mount reow soldering description . 19. Revision history Product data sheet Rev. 03 21 June 2007 47 of 48 20. Legal information 20.1 Data sheet status 20.2 Denitions 20.3 Disclaimers 20.4 Trademarks 22. Contents