1998 July 30
Philips Semiconductors Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads TDA5360
26
12 ELECTRICAL PARAMETERS
12.1 DC Characteristics
Unless otherwise specified, recommended operating conditions apply
CS0=CS1=LOW, DRN=HIGH, BFAST=LOW, STWn=HIGH, RIN=18 Ohm, LFP = 1MHz, Imr = 8mA, Rmr = 66 Ohm
Iwr = 30.8mA.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
ICC
VCC Supply Current
Read Mode, IMR = 8mA 65 75 85 mA
Write Mode, IWR = 30.8 mA 100 130 175 mA
Standby Mode 200 1400 2500 uA
Sleep Mode 200 700 2000 uA
IEE VEE Supply Current
Read Mode, IMR = 8mA -20 -12 -8 mA
Write Mode, IWR = 30.8 mA -150 -80 -60 mA
Standby Mode -200 -5 0uA
Sleep Mode -200 -5 0uA
Power Dissipation Read Mode, IMR = 8mA 365 435 525 mW
Pw (TJ=105°C) Write Mode IWR = 30.8 mA 800 1050 1625 mW
VIL Input Low Voltage TTL 0 0.8 V
VIH Input High Voltage TTL 2.4 5V
IIL Input Low Current
VIL = 0.8 V PECL
TTL -160 50 uA
uA
IIH Input High Current
VIH = 2.4V PECL
TTL 50
80 uA
uA
VOL Output Low voltage SDATA IOL = 4mA 0.4 V
VOH Output High voltage SDATA 5V mode
SDATA 3.3V mode 3.6
2.4 Vcc
3.6 V
V
IOH Output High Current FLT VOH = 5.0V 50 uA
VOL Output Low Voltage FLT IOL = 4mA 0.4 V
High level WDP and WDN PECL (Note 1)
Current mode (Note2) -0.25 Vcc
0V
mA
Low level WDP and WDN PECL (Note 1)
Current mode (Note 2) 2.4
- 4 -1 V
mA
|WDP-WDN| PECL swing Voltage mode selected
peak to peak (Note 1) 0.4 1.5 V