Philips TDA5360

1998 July 30

Philips Semiconductors Objective Specification, Revision 2.2

Pre-Amplifier for Hard Disk Drive with

MR-Read / Inductive Write Heads TDA5360

12.2 Read Characteristics

Unless otherwise specified, recommended operating conditions apply.

Voltage compliance for WDP

and WDN in current mode CMM of the inputs

in current mode 1.5 Vcc -1.7 V

VCCTL VCC Fault Threshold Hysteresis=100mV +/- 10% 3.80 4.00 4.20 V

VEETL VEE Fault Threshold Hysteresis=100mV +/- 10% -4.20 -4.00 -3.80 V

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

IMR MR Current Range SAL

GMR 4

3810.2

6mA

Pwr MR Power Range SAL

GMR

(Note 3)

1.500

0.375 4.2

19.25

2.30 mW

MR Power Tolerance 3 < IMR < 10mA -5 +5 %

MR Bias Current Overshoot 0 %

RMR Digitizer Accuracy 5%

VRext Rext Reference Voltage 1.31 V

AVd Differential Voltage Gain VIN = 1mVPP @ 20MHz,

RLoaddif = 330 Ohm,IMR=8mA,

RMR = 66 Ohm,

RIN = 18 Ohm,

GAIN0=0, GAIN1=1,GMR=0

48 50 52 dB

fHR Passband Upper -3dB

Frequency RMR = 66Ω;LMR=30nH

- 3dB. Without boost. 225 MHz

fLR Passband Lower -3dB

Frequency RMR = 66Ω; LMR = 30nH;

LPF0=0

LPF1=1

3MHz

IRNV Input referenced noise voltage

(including MR bias current noise,

excluding Rmr noise)

RMR = 66Ω; IMR=8mA

10 MHz<f<100 MHz, GMR=0

(Note 4)

0.8 nV/

÷sqrt

MR bias current noise IMR=8mA 10 MHz<f<100MHz

IMR=5mA 10 MHz<f<130MHz

5.7 pA/

sqrt÷

NF Noise figure (Note 5) 1.7 dB

HF noise +3dB frequency Preamp noise=head noise 350 MHz

LF noise +3dB frequency Preamp noise=head noise 3MHz