1998 July 30
Philips Semiconductors Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads TDA5360
4
3QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC DC Supply voltage +4.5 +5 +5.5 V
VEE -4.5 -5 -5.5 V
NF Noise Figure Note 3, Section 14 1.7 1.7 dB
IRNV Input Referred Noise
Voltage Rmr=66Ω; Imr=8mA;
10 MHz<f<100 MHz 0.8 nV/
sqrtHz
Avd Differential gain VIN=1mVpp @ 20 MHz,
RLoaddif=330Ω, Imr=8mA,
Rmr=66Ω,
GAIN0=0, GAIN1=1;
50 dB
fHR -3dB frequency bandwidth Rmr=66Ω, Lmr=30 nH
-3dB: without Boost SAL
GMR 225
225 MHz
MHz
CMR Common Mode Rejection Imr=8mA, Rmr=66Ω,
10MHz<f<200MHz
1 MHz<f< 10MHz
f<100 kHz, 1mV input signal
20
40
60
dB
dB
dB
PSR Power Supply Rejection 200mVpp on Vcc or Vee,
Imr=8mA, Rmr=66Ω,
10MHz<f<200MHz
1 MHz<f<10 MHz
f<100 kHz
20
40
60
dB
dB
dB
tr, tfWrite Current Rise/Fall times
(-0.8 * Iwr => +0.8 * Iwr) Iwr=50mA; f=20 MHz;
LH=75nH, RH=10Ω0.84 ns
IMR(PR) Programming MR bias
current range SAL
GMR (see note section 10) 4
310.2
6 .1 mA
mA
IWR(b-p) Programming Write current
range (base-to-peak) Rext = 10 kΩ10 50.3 mA
fsclk Serial interface clock rate 40 MHz