1998 July 30
Philips Semiconductors Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads TDA5360
32
13 LIMITING VALUES / RECOMMENDED OPERATION CONDITIONS
In accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. TYP MAX. UNIT
VCC Positive Supply voltage
range note1 4.5 5.0 5.5 V
VEE Negative Supply voltage
range note 2-4.5 - 5.0 -5.5 V
VIH High level CMOS input
voltage 2.4 VCC V
VIL Low level CMOS input
voltage 00.8 V
Vi(dif)(p-p)
(Writer input)
Differential Peak to Peak
input voltage
High level PECL input
voltage
Low level PECL input
voltage
0.4
2.4
0.7
3.2
2.8
1.5
VCC
V
V
V
Imode
(Writer input)
Differential Peak to Peak
input current
High level input current
Low level input current
0.4
-1.4
0.8
-1.2
-0.4
1.0
-0.1
mA
mA
mA
Tamb Ambient temperature 0 55 70 °C
TjJunction temperature when reading
when writing
70 110
130
°C
RMR MR element resistance 46 66 86 Ohm
Ll(tot) Total lead inductance to
the head in each lead -17 nH
Rl(tot) Total lead resistance to the
head in each lead -1.5 Ohm
VMR Voltage accross MR
element (RPx-RNx) 1V
Vsig(dif)(p-p) MR head input signal peak
to peak voltage differential 0.4 1 3 mVpp
Lwh Write Head inductance including lead 75 nH
Rwh Write Head resistance including lead -10 Ohm
Cwh Write head capacitance including lead -TBD pF
Rext Reference resistor Iref=Vref/Rext 9.9 10 10.1 k Ω