BIOS
Row cycle time (Trc)
This field specifies the Row Cycle Time. RAS# active to RAS# active or auto refresh of the same bank.
Options: Auto, 7T ~ 21T.
Row refresh cyc time (Trfc)
This field specifies the Row Refresh Cycle Time.
Options: Auto, 9T ~ 23T.
Row to Row delay (Trrd)
This field specifies the Row to Row delay of different banks.
Options: Auto, 2T ~ 4T.
Write recovery time (Twr)
This bits specifies the Write Recovery Time. Called Trd1 by Samsung, measures when the last write datum is safely registered by the DRAM. It measures from the last data to precharge.
Options: Auto, 2, 3.
Write to Read delay (Twtr)
This bits specifies the Write to Read delay. Samsung Calls this Tcd1r (last data in to read command). It is measured from the rising edge following the last non- masked data strobe to the rising edge of the next Read Command. (Jedec spec this as exactly one clock).
Options: Auto, 1, 2.
Read to Write delay (Trwt)
This field specifies the Read to write delay. This is not a DRAM specified timing parameter but must be considered due to routing latencies on the clock forwarded bus. It is counted from first address but slot which was not associated with part of the read burst.
Options: Auto, 1 ~ 6.
Refresh Rate (Tref)
This field specifies the number of clock cycles between refresh. Options: Auto, 15.6us, 7.8us, 3.9us.
Read Preamble Value
Options: Auto, 2.5ns to 9.5ns in 0.5ns increments.
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