Cypress CY7B992, CY7B991 manual Electrical Characteristics

Page 6

CY7B991

CY7B992

Electrical Characteristics

Over the Operating Range[6]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7B991

CY7B992

 

Parameter

Description

 

 

Test Conditions

 

 

 

 

Unit

 

 

Min

Max

Min

Max

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min IOH = –16 mA

2.4

 

 

 

V

 

 

VCC = Min, IOH =–40 mA

 

 

VCC–0.75

 

 

VOL

Output LOW Voltage

VCC = Min, IOL = 46 mA

 

0.45

 

 

V

 

 

VCC = Min, IOL = 46 mA

 

 

 

0.45

 

VIH

Input HIGH Voltage

 

 

 

 

 

2.0

VCC

VCC

VCC

V

 

(REF and FB inputs only)

 

 

 

 

 

 

 

1.35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Input LOW Voltage

 

 

 

 

 

–0.5

0.8

–0.5

1.35

V

 

(REF and FB inputs only)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIHH

Three Level Input HIGH

Min VCC Max

 

VCC – 0.85

VCC

VCC – 0.85

VCC

V

 

Voltage (Test, FS, xFn)[10]

 

 

 

 

 

 

 

 

 

 

VIMM

Three Level Input MID

Min VCC Max

 

VCC/2 –

VCC/2 +

VCC/2 –

VCC/2 +

V

 

Voltage (Test, FS, xFn)[10]

 

 

 

 

 

500 mV

500 mV

500 mV

500 mV

 

VILL

Three Level Input LOW

Min VCC

 

0.0

0.85

0.0

0.85

V

 

Voltage (Test, FS, xFn)[10]

Maximum

 

 

 

 

 

 

IIH

Input HIGH Leakage Current

VCC = Max, VIN = Max.

 

10

 

10

μA

 

(REF and FB inputs only)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IIL

Input LOW Leakage Current

VCC = Max, VIN = 0.4V

 

–500

 

–500

 

μA

 

(REF and FB inputs only)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IIHH

Input HIGH Current

VIN = VCC

 

 

200

 

200

μA

 

(Test, FS, xFn)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IIMM

Input MID Current

VIN = VCC/2

 

–50

50

–50

50

μA

 

(Test, FS, xFn)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IILL

Input LOW Current

VIN = GND

 

 

–200

 

–200

μA

 

(Test, FS, xFn)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOS

Output Short Circuit

VCC = Max, VOUT

 

 

–250

 

N/A

mA

 

Current[8]

= GND (25°C only)

 

 

 

 

 

 

ICCQ

Operating Current Used by

VCCN

=VCCQ =Max,

Com’l

 

85

 

85

mA

 

Internal Circuitry

All Input

 

 

 

 

 

 

 

 

 

Mil/Ind

 

90

 

90

 

 

 

Selects Open

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICCN

Output Buffer Current per

VCCN

= VCCQ = Max,

 

 

 

14

 

19

mA

 

Output Pair[9]

IOUT = 0 mA

 

 

 

 

 

 

 

 

Input Selects Open, fMAX

 

 

 

 

 

PD

Power Dissipation per

V

CCN

= V = Max,

 

 

78

 

104[11]

mW

 

Output Pair[10]

 

CCQ

 

 

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

Input Selects Open, fMAX

 

 

 

 

 

Notes

6.For more information see “Group A Subgroup Testing” on page 17.

7.These inputs are normally wired to VCC, GND, or left unconnected (actual threshold voltages vary as a percentage of VCC). Internal termination resistors hold unconnected inputs at VCC/2. If these inputs are switched, the function and timing of the outputs may glitch and the PLL may require an additional tLOCK time before all datasheet limits are achieved.

8.CY7B991 must be tested one output at a time, output shorted for less than one second, less than 10% duty cycle. Room temperature only. CY7B992 outputs must not be shorted to GND. Doing so may cause permanent damage.

9.Total output current per output pairis approximated by the following expression that includes device current plus load current: CY7B991: ICCN = [(4 + 0.11F) + [((835 – 3F)/Z) + (.0022FC)]N] x 1.1

CY7B992: ICCN = [(3.5+ 0.17F) + [((1160 – 2.8F)/Z) + (.0025FC)]N] x 1.1 Where

F = frequency in MHz; C = capacitive load in pF; Z = line impedance in ohms; N = number of loaded outputs; 0, 1, or 2; FC = F < C.

10.Total power dissipation per output pair can be approximated by the following expression that includes device power dissipation plus power dissipation due to the load circuit:

CY7B991:PD = [(22 + 0.61F) + [((1550 – 2.7F)/Z) + (.0125FC)]N] x 1.1 CY7B992:PD = [(19.25+ 0.94F) + [((700 + 6F)/Z) + (.017FC)]N] x 1.1 See note 9 for variable definition.

11.Applies to REF and FB inputs only. Tested initially and after any design or process changes that may affect these parameters.

Document Number: 38-07138 Rev. *B

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Contents Functional Description FeaturesLogic Block Diagram Cypress Semiconductor Corporation 198 Champion CourtPin Configuration Signal Name DescriptionPin Definitions Block Diagram Description Test Mode Typical Outputs with FB Connected to a Zero-Skew OutputMaximum Ratings Operating RangeAmbient Range Electrical Characteristics Parameter Description Test Conditions CapacitanceAC Test Loads and Waveforms Input Capacitance = 25 C, f = 1 MHz, V CC =Switching Characteristics Over the Operating Range2 Parameter Description Min Typ Max UnitCY7B991-5 CY7B992-5 Parameter Description Unit Min Typ Max Propagation Delay, REF Rise to FB RiseOver the Operating Range2 Zero Output Skew All Outputs 16+0.7 Switching CharacteristicsCY7B991-7 CY7B992-7 Parameter Description Unit Min Typ Max +1.5AC Timing Diagrams Operational Mode Descriptions Programmable Skew Clock DriverInverted Output Connections Multi-Function Clock Driver Board-to-Board Clock Distribution Ordering Information Accuracy Ordering Code Package Type Operating RangePb-Free Package Diagrams Military SpecificationsDC Characteristics SubgroupsPin Rectangular Leadless Chip Carrier Issue Date Orig. Description of Change Document History

CY7B991, CY7B992 specifications

The Cypress CY7B992 and CY7B991 are advanced synchronous SRAM devices designed for high-speed applications, particularly in the field of telecommunications, networking, and high-performance computing. These SRAMs are notable for their ability to operate at high frequencies, making them suitable for systems that require rapid data access and processing.

One of the main features of the CY7B992 and CY7B991 is their support for synchronous operation, which allows for data transfers aligned with a clock signal. This capability significantly enhances performance by reducing access times and increasing data throughput compared to traditional asynchronous SRAMs. With their optimized write and read cycles, these devices can achieve low latency, enabling efficient data handling in real-time applications.

Another key technology utilized in these devices is the use of a 2-port architecture, which supports simultaneous read and write operations. This dual-port design allows for greater flexibility and efficiency in data management, making it easier to implement complex memory architectures in various applications. The architecture also supports burst mode operation, allowing for rapid sequential data access, which is crucial in environments where speed is paramount.

The CY7B992 and CY7B991 feature a wide data bus width, accommodating 32 bits to suit modern data processing needs. Their compact size and ease of integration into existing systems make them popular choices among designers and engineers. Moreover, these SRAMs offer a comprehensive range of voltage and temperature specifications, ensuring reliable performance across diverse operating conditions.

In terms of power management, the CY7B992 and CY7B991 are designed to consume low power while maintaining high performance, making them ideal for battery-operated or energy-sensitive applications. The devices include various power-saving features, such as power-down modes, enabling users to reduce overall system power consumption when the memory is not actively in use.

Overall, the Cypress CY7B992 and CY7B991 are robust, high-speed SRAM solutions that cater to the demands of sophisticated, data-intensive applications. Their synchronous operation, dual-port architecture, and efficient power management characteristics make them essential components in modern electronic systems. As technology continues to evolve, these SRAMs are poised to play a critical role in advancing the capabilities of next-generation devices.