Cypress CY7B992, CY7B991 manual Switching Characteristics Over the Operating Range2

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CY7B991

CY7B992

Switching Characteristics Over the Operating Range[2, 13]

 

 

 

CY7B991–2[14]

 

CY7B992–2[14]

 

Parameter

Description

Min

Typ

Max

 

Min

 

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

fNOM

Operating Clock

FS = LOW[1, 2]

15

 

30

 

15

 

 

30

MHz

 

Frequency in MHz

 

 

 

 

 

 

 

 

 

 

 

FS = MID[1, 2]

25

 

50

 

25

 

 

50

 

 

 

FS = HIGH[1, 2 , 3]

40

 

80

 

40

 

 

80[15]

 

tRPWH

REF Pulse Width HIGH

 

5.0

 

 

 

5.0

 

 

 

ns

tRPWL

REF Pulse Width LOW

 

5.0

 

 

 

5.0

 

 

 

ns

tU

Programmable Skew Unit

 

 

 

 

See Table 1

 

 

 

tSKEWPR

Zero Output Matched-Pair Skew

 

0.05

0.20

 

 

 

0.05

0.20

ns

 

(XQ0, XQ1)[16, 17]

 

 

 

 

 

 

 

 

 

 

tSKEW0

Zero Output Skew (All Outputs)[16, 18,19]

 

0.1

0.25

 

 

 

0.1

0.25

ns

tSKEW1

Output Skew (Rise-Rise, Fall-Fall, Same

 

0.25

0.5

 

 

 

0.25

0.5

ns

 

Class Outputs)[16, 19]

 

 

 

 

 

 

 

 

 

 

tSKEW2

Output Skew (Rise-Fall, Nominal-Inverted,

 

0.3

0.5

 

 

 

0.3

0.5

ns

 

Divided-Divided)[16,19]

 

 

 

 

 

 

 

 

 

 

tSKEW3

Output Skew (Rise-Rise, Fall-Fall, Different

 

0.25

0.5

 

 

 

0.25

0.5

ns

 

Class Outputs)[16, 19]

 

 

 

 

 

 

 

 

 

 

tSKEW4

Output Skew (Rise-Fall, Nominal-Divided,

 

0.5

0.9

 

 

 

0.5

0.7

ns

 

Divided-Inverted)[16,19]

 

 

 

 

 

 

 

 

 

 

tDEV

Device-to-Device Skew[14, 21]

 

 

0.75

 

 

 

 

0.75

ns

tPD

Propagation Delay, REF Rise to FB Rise

–0.25

0.0

+0.25

 

–0.25

 

0.0

+0.25

ns

tODCV

Output Duty Cycle Variation[22]

–0.65

0.0

+0.65

 

–0.5

 

0.0

+0.5

ns

tPWH

Output HIGH Time Deviation from 50%[23, 24]

 

 

2.0

 

 

 

 

3.0

ns

tPWL

Output LOW Time Deviation from 50%[23, 24]

 

 

1.5

 

 

 

 

3.0

ns

tORISE

Output Rise Time[23, 25]

 

0.15

1.0

1.2

 

0.5

 

2.0

2.5

ns

tOFALL

Output Fall Time[23, 25]

 

0.15

1.0

1.2

 

0.5

 

2.0

2.5

ns

tLOCK

PLL Lock Time[26]

 

 

 

0.5

 

 

 

 

0.5

ms

tJR

Cycle-to-Cycle Output

RMS[14]

 

 

25

 

 

 

 

25

ps

 

Jitter

 

 

 

 

 

 

 

 

 

 

 

Peak-to-Peak[14]

 

 

200

 

 

 

 

200

ps

Notes

12.CMOS output buffer current and power dissipation specified at 50 MHz reference frequency.

13.Test measurement levels for the CY7B991 are TTL levels (1.5V to 1.5V). Test measurement levels for the CY7B992 are CMOS levels (VCC/2 to VCC/2). Test conditions assume signal transition times of 2 ns or less and output loading as shown in the AC Test Loads and Waveforms unless otherwise specified.

14.Guaranteed by statistical correlation. Tested initially and after any design or process changes that affect these parameters.

15.Except as noted, all CY7B992–2 and –5 timing parameters are specified to 80 MHz with a 30 pF load.

16.SKEW is defined as the time between the earliest and the latest output transition among all outputs for which the same tU delay is selected when all are loaded with 50 pF and terminated with 50Ω to 2.06V (CY7B991) or VCC/2 (CY7B992).

17.tSKEWPR is defined as the skew between a pair of outputs (XQ0 and XQ1) when all eight outputs are selected for 0tU.

18.tSKEW0 is defined as the skew between outputs when they are selected for 0tU. Other outputs are divided or inverted but not shifted.

19.CL=0 pF. For CL=30 pF, tSKEW0=0.35 ns.

20.There are three classes of outputs: Nominal (multiple of tU delay), Inverted (4Q0 and 4Q1 only with 4F0 = 4F1 = HIGH), and Divided (3Qx and 4Qx only in Divide-by-2 or Divide-by-4 mode).

21.tDEV is the output-to-output skew between any two devices operating under the same conditions (VCC ambient temperature, air flow, and so on.)

22.tODCV is the deviation of the output from a 50% duty cycle. Output pulse width variations are included in tSKEW2 and tSKEW4 specifications.

23.Specified with outputs loaded with 30 pF for the CY7B99X–2 and –5 devices and 50 pF for the CY7B99X–7 devices. Devices are terminated through 50Ω to 2.06V (CY7B991) or VCC/2 (CY7B992).

24.tPWH is measured at 2.0V for the CY7B991 and 0.8 VCC for the CY7B992. tPWL is measured at 0.8V for the CY7B991 and 0.2 VCC for the CY7B992.

25.tORISE and tOFALL measured between 0.8V and 2.0V for the CY7B991 or 0.8VCC and 0.2VCC for the CY7B992.

26.tLOCK is the time that is required before synchronization is achieved. This specification is valid only after VCC is stable and within normal operating limits. This parameter is measured from the application of a new signal or frequency at REF or FB until tPD is within specified limits.

Document Number: 38-07138 Rev. *B

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Definitions Pin ConfigurationSignal Name Description Block Diagram Description Test Mode Typical Outputs with FB Connected to a Zero-Skew OutputAmbient Range Maximum RatingsOperating Range Electrical Characteristics Capacitance AC Test Loads and WaveformsParameter Description Test Conditions Input Capacitance = 25 C, f = 1 MHz, V CC =Switching Characteristics Over the Operating Range2 Parameter Description Min Typ Max UnitPropagation Delay, REF Rise to FB Rise Over the Operating Range2CY7B991-5 CY7B992-5 Parameter Description Unit Min Typ Max Zero Output Skew All Outputs 16Switching Characteristics CY7B991-7 CY7B992-7 Parameter Description Unit Min Typ Max+0.7 +1.5AC Timing Diagrams Operational Mode Descriptions Programmable Skew Clock DriverInverted Output Connections Multi-Function Clock Driver Board-to-Board Clock Distribution Pb-Free Ordering InformationAccuracy Ordering Code Package Type Operating Range Military Specifications DC CharacteristicsPackage Diagrams SubgroupsPin Rectangular Leadless Chip Carrier Issue Date Orig. Description of Change Document History

CY7B991, CY7B992 specifications

The Cypress CY7B992 and CY7B991 are advanced synchronous SRAM devices designed for high-speed applications, particularly in the field of telecommunications, networking, and high-performance computing. These SRAMs are notable for their ability to operate at high frequencies, making them suitable for systems that require rapid data access and processing.

One of the main features of the CY7B992 and CY7B991 is their support for synchronous operation, which allows for data transfers aligned with a clock signal. This capability significantly enhances performance by reducing access times and increasing data throughput compared to traditional asynchronous SRAMs. With their optimized write and read cycles, these devices can achieve low latency, enabling efficient data handling in real-time applications.

Another key technology utilized in these devices is the use of a 2-port architecture, which supports simultaneous read and write operations. This dual-port design allows for greater flexibility and efficiency in data management, making it easier to implement complex memory architectures in various applications. The architecture also supports burst mode operation, allowing for rapid sequential data access, which is crucial in environments where speed is paramount.

The CY7B992 and CY7B991 feature a wide data bus width, accommodating 32 bits to suit modern data processing needs. Their compact size and ease of integration into existing systems make them popular choices among designers and engineers. Moreover, these SRAMs offer a comprehensive range of voltage and temperature specifications, ensuring reliable performance across diverse operating conditions.

In terms of power management, the CY7B992 and CY7B991 are designed to consume low power while maintaining high performance, making them ideal for battery-operated or energy-sensitive applications. The devices include various power-saving features, such as power-down modes, enabling users to reduce overall system power consumption when the memory is not actively in use.

Overall, the Cypress CY7B992 and CY7B991 are robust, high-speed SRAM solutions that cater to the demands of sophisticated, data-intensive applications. Their synchronous operation, dual-port architecture, and efficient power management characteristics make them essential components in modern electronic systems. As technology continues to evolve, these SRAMs are poised to play a critical role in advancing the capabilities of next-generation devices.