Cypress CY7B992, CY7B991 manual Switching Characteristics, +0.7, +1.5

Page 10

CY7B991

CY7B992

Switching Characteristics

Over the Operating Range[2, 13] (continued)

 

 

 

 

 

CY7B991–7

 

 

CY7B992–7

 

 

Parameter

Description

 

 

 

 

 

 

 

 

 

 

Unit

Min

 

Typ

 

Max

Min

 

Typ

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

fNOM

Operating Clock

 

FS = LOW[1, 2]

15

 

 

 

30

15

 

 

 

30

MHz

 

Frequency in MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FS = MID[1, 2]

25

 

 

 

50

25

 

 

 

50

 

 

 

 

FS = HIGH[1, 2]

40

 

 

 

80

40

 

 

 

80[15]

 

tRPWH

REF Pulse Width HIGH

 

5.0

 

 

 

 

5.0

 

 

 

 

ns

tRPWL

REF Pulse Width LOW

 

5.0

 

 

 

 

5.0

 

 

 

 

ns

tU

Programmable Skew Unit

 

 

 

 

 

 

See Table 1

 

 

tSKEWPR

Zero Output Matched-Pair Skew

 

 

0.1

 

0.25

 

 

0.1

 

0.25

ns

 

(XQ0, XQ1)[16, 17]

 

 

 

 

 

 

 

 

 

 

 

 

tSKEW0

Zero Output Skew (All Outputs)[16, 18]

 

 

0.3

 

0.75

 

 

0.3

 

0.75

ns

tSKEW1

Output Skew (Rise-Rise, Fall-Fall, Same

 

 

0.6

 

1.0

 

 

0.6

 

1.0

ns

 

Class Outputs)[16, 19]

 

 

 

 

 

 

 

 

 

 

 

 

tSKEW2

Output Skew (Rise-Fall, Nominal-Inverted,

 

 

1.0

 

1.5

 

 

1.0

 

1.5

ns

 

Divided-Divided)[16,19]

 

 

 

 

 

 

 

 

 

 

 

 

tSKEW3

Output Skew (Rise-Rise, Fall-Fall, Different

 

 

0.7

 

1.2

 

 

0.7

 

1.2

ns

 

Class Outputs)[16, 19]

 

 

 

 

 

 

 

 

 

 

 

 

tSKEW4

Output Skew (Rise-Fall, Nominal-Divided,

 

 

1.2

 

1.7

 

 

1.2

 

1.7

ns

 

Divided-Inverted)[16,19]

 

 

 

 

 

 

 

 

 

 

 

 

tDEV

Device-to-Device Skew[14, 22]

 

 

 

 

1.65

 

 

 

 

1.65

ns

tPD

Propagation Delay, REF Rise to FB Rise

–0.7

 

0.0

 

+0.7

–0.7

 

0.0

 

+0.7

ns

tODCV

Output Duty Cycle Variation[22]

–1.2

 

0.0

 

+1.2

–1.5

 

0.0

 

+1.5

ns

tPWH

Output HIGH Time Deviation from 50%[23, 24]

 

 

 

 

3

 

 

 

 

5.5

ns

tPWL

Output LOW Time Deviation from 50%[23, 24]

 

 

 

 

3.5

 

 

 

 

5.5

ns

tORISE

Output Rise Time[23, 25]

 

0.15

 

1.5

 

2.5

0.5

 

3.0

 

5.0

ns

tOFALL

Output Fall Time[23, 25]

 

0.15

 

1.5

 

2.5

0.5

 

3.0

 

5.0

ns

tLOCK

PLL Lock Time[26]

 

 

 

 

 

0.5

 

 

 

 

0.5

ms

tJR

Cycle-to-Cycle Output

 

RMS[14]

 

 

 

 

25

 

 

 

 

25

ps

 

Jitter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak-to-Peak[14]

 

 

 

 

200

 

 

 

 

200

ps

Document Number: 38-07138 Rev. *B

Page 10 of 19

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Contents Functional Description FeaturesLogic Block Diagram Cypress Semiconductor Corporation 198 Champion CourtSignal Name Description Pin ConfigurationPin Definitions Block Diagram Description Test Mode Typical Outputs with FB Connected to a Zero-Skew OutputOperating Range Maximum RatingsAmbient Range Electrical Characteristics Parameter Description Test Conditions CapacitanceAC Test Loads and Waveforms Input Capacitance = 25 C, f = 1 MHz, V CC =Switching Characteristics Over the Operating Range2 Parameter Description Min Typ Max UnitCY7B991-5 CY7B992-5 Parameter Description Unit Min Typ Max Propagation Delay, REF Rise to FB RiseOver the Operating Range2 Zero Output Skew All Outputs 16+0.7 Switching CharacteristicsCY7B991-7 CY7B992-7 Parameter Description Unit Min Typ Max +1.5AC Timing Diagrams Operational Mode Descriptions Programmable Skew Clock DriverInverted Output Connections Multi-Function Clock Driver Board-to-Board Clock Distribution Accuracy Ordering Code Package Type Operating Range Ordering InformationPb-Free Package Diagrams Military SpecificationsDC Characteristics SubgroupsPin Rectangular Leadless Chip Carrier Issue Date Orig. Description of Change Document History

CY7B991, CY7B992 specifications

The Cypress CY7B992 and CY7B991 are advanced synchronous SRAM devices designed for high-speed applications, particularly in the field of telecommunications, networking, and high-performance computing. These SRAMs are notable for their ability to operate at high frequencies, making them suitable for systems that require rapid data access and processing.

One of the main features of the CY7B992 and CY7B991 is their support for synchronous operation, which allows for data transfers aligned with a clock signal. This capability significantly enhances performance by reducing access times and increasing data throughput compared to traditional asynchronous SRAMs. With their optimized write and read cycles, these devices can achieve low latency, enabling efficient data handling in real-time applications.

Another key technology utilized in these devices is the use of a 2-port architecture, which supports simultaneous read and write operations. This dual-port design allows for greater flexibility and efficiency in data management, making it easier to implement complex memory architectures in various applications. The architecture also supports burst mode operation, allowing for rapid sequential data access, which is crucial in environments where speed is paramount.

The CY7B992 and CY7B991 feature a wide data bus width, accommodating 32 bits to suit modern data processing needs. Their compact size and ease of integration into existing systems make them popular choices among designers and engineers. Moreover, these SRAMs offer a comprehensive range of voltage and temperature specifications, ensuring reliable performance across diverse operating conditions.

In terms of power management, the CY7B992 and CY7B991 are designed to consume low power while maintaining high performance, making them ideal for battery-operated or energy-sensitive applications. The devices include various power-saving features, such as power-down modes, enabling users to reduce overall system power consumption when the memory is not actively in use.

Overall, the Cypress CY7B992 and CY7B991 are robust, high-speed SRAM solutions that cater to the demands of sophisticated, data-intensive applications. Their synchronous operation, dual-port architecture, and efficient power management characteristics make them essential components in modern electronic systems. As technology continues to evolve, these SRAMs are poised to play a critical role in advancing the capabilities of next-generation devices.