Cypress CY62137EV30 manual Package Diagrams, Pin Vfbga 6 x 8 x 1 mm

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Package Diagrams

CY62137EV30

MoBL®

48-pin VFBGA (6 x 8 x 1 mm) (51-85150)

8.00±0.10

TOP VIEW

A1 CORNER

1 2 3 4 5 6

8.00±0.10

5.25

0.75

2.625

BOTTOM VIEW

A1 CORNER

Ø0.05 M C Ø0.25 M C A B Ø0.30±0.05(48X)

6 5 4 3 2 1

0.25 C

0.55 MAX.

6.00±0.10

0.21±0.05

0.10 C

0.15(4X)

1.875

0.75

3.75

6.00±0.10

0.26 MAX.

51-85150-*D

SEATING PLANE

1.00 MAX

Document #: 38-05443 Rev. *B

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Contents Functional Description1 FeaturesLogic Block Diagram Cypress Semiconductor CorporationVfbga Top View Tsop II Top View Pin Configurations2Product Portfolio MaxMaximum Ratings Electrical Characteristics Over the Operating RangeOperating Range AC Test Loads and Waveforms Data Retention Characteristics Over the Operating RangeThermal Resistance Data Retention Waveform1045 ns Parameter Description Unit Min Max Read Cycle Switching Characteristics Over the Operating RangeWrite Cycle Read Cycle 1 Address Transition Controlled15 Switching WaveformsRead Cycle No OE Controlled16 Write Cycle No CE Controlled14, 18 Write Cycle No WE Controlled14, 18Data I/O Write Cycle No BHE/BLE Controlled, OE LOW19 Write Cycle No WE Controlled, OE LOW19DATAI/O Data BHE BLE Inputs/Outputs Mode PowerOrdering Information CY62137EV30LL-45ZSXI 51-85087 Pin Tsop II Pb-freePackage Diagrams Pin Vfbga 6 x 8 x 1 mmPin Tsop II Document History Issue Date Orig. Description of ChangeREV ECN no

CY62137EV30 specifications

Cypress Semiconductor, a well-established name in the semiconductor industry, offers a range of memory solutions, one of which is the CY62137EV30. This product is a high-performance CMOS SRAM (Static Random Access Memory) that has gained recognition for its versatility and reliability. The CY62137EV30 is designed for various applications requiring fast access times and low power consumption.

One of the main features of the CY62137EV30 is its high-speed operation, with access times as fast as 30 ns. This capability allows the device to provide quick read and write cycles, making it suitable for applications that demand rapid data processing. The memory device operates with a voltage supply of 3.0V to 3.6V, ensuring compatibility with low-voltage digital circuits.

The device boasts a large memory capacity of 512 Kbit, organized in a 64K x 8 configuration. This structure allows for efficient data storage and retrieval, catering to applications such as telecommunications, consumer electronics, and automotive systems, where reliable data handling is crucial. The integrated memory cell design further enhances its performance, providing better speed and efficiency compared to traditional memory solutions.

Another significant characteristic of the CY62137EV30 is its low power consumption. It features a low standby current, making it ideal for battery-operated devices where power efficiency is essential. This characteristic aligns with current industry trends focusing on energy-efficient designs, contributing to longer battery life and reduced operational costs.

The CY62137EV30 also incorporates advanced technologies, such as an easy-to-use asynchronous interface. This feature simplifies the integration of the SRAM into various systems, as it allows for straightforward communication without the need for complex control signals. Additionally, the device is designed to withstand extended temperature ranges, further enhancing its reliability in diverse environmental conditions.

In summary, the Cypress CY62137EV30 stands out due to its high-speed performance, significant storage capacity, low power consumption, and ease of integration. These features make it a preferred choice for a wide range of applications, ensuring that it meets the demands of modern electronic devices and systems. As the need for efficient memory solutions continues to grow, the CY62137EV30 positions itself as a key player in the SRAM market.