Cypress CY62137EV30 manual Ordering Information, Bhe Ble, Inputs/Outputs Mode Power

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CY62137EV30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MoBL®

 

Truth Table

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

WE

 

 

OE

 

 

BHE

 

 

BLE

 

Inputs/Outputs

Mode

 

Power

 

 

H

 

 

X

 

 

X

 

 

X

 

 

X

 

High Z

Deselect/Power-down

 

Standby (ISB)

 

 

X

 

 

X

 

 

X

 

 

H

 

 

H

 

High Z

Deselect/Power-down

 

Standby (ISB)

 

 

L

 

 

H

 

 

L

 

 

L

 

 

L

 

Data Out (I/OO–I/O15)

Read

 

Active (ICC)

 

 

L

 

 

H

 

 

L

 

 

H

 

 

L

 

Data Out (I/OO–I/O7);

Read

 

Active (ICC)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O8–I/O15in High Z

 

 

 

 

 

L

 

 

H

 

 

L

 

 

L

 

 

H

 

Data Out (I/O8–I/O15);

Read

 

Active (ICC)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O0–I/O7in High Z

 

 

 

 

 

L

 

 

H

 

 

H

 

 

L

 

 

L

 

High Z

Output Disabled

 

Active (ICC)

 

 

L

 

 

H

 

 

H

 

 

H

 

 

L

 

High Z

Output Disabled

 

Active (ICC)

 

 

L

 

 

H

 

 

H

 

 

L

 

 

H

 

High Z

Output Disabled

 

Active (ICC)

 

 

L

 

 

L

 

 

X

 

 

L

 

 

L

 

Data In (I/OO–I/O15)

Write

 

Active (ICC)

 

 

L

 

 

L

 

 

X

 

 

H

 

 

L

 

Data In (I/OO–I/O7);

Write

 

Active (ICC)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O8–I/O15in High Z

 

 

 

 

 

L

 

 

L

 

 

X

 

 

L

 

 

H

 

Data In (I/O8–I/O15);

Write

 

Active (ICC)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O0–I/O7in High Z

 

 

 

 

Ordering Information

Speed

Ordering Code

Package

Package Type

Operating

(ns)

Diagram

Range

 

 

 

 

 

45

CY62137EV30LL-45BVXI

51-85150

48-ball Very Fine Pitch BGA (6 mm × 8mm × 1 mm) (Pb-free)

Industrial

 

 

 

 

 

45

CY62137EV30LL-45ZSXI

51-85087

44-pin TSOP II (Pb-free)

 

 

 

 

 

 

Document #: 38-05443 Rev. *B

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationProduct Portfolio Pin Configurations2Vfbga Top View Tsop II Top View MaxElectrical Characteristics Over the Operating Range Maximum RatingsOperating Range Thermal Resistance Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention Waveform10Switching Characteristics Over the Operating Range 45 ns Parameter Description Unit Min Max Read CycleWrite Cycle Switching Waveforms Read Cycle 1 Address Transition Controlled15Read Cycle No OE Controlled16 Write Cycle No WE Controlled14, 18 Write Cycle No CE Controlled14, 18Data I/O Write Cycle No WE Controlled, OE LOW19 Write Cycle No BHE/BLE Controlled, OE LOW19DATAI/O Data Ordering Information Inputs/Outputs Mode PowerBHE BLE CY62137EV30LL-45ZSXI 51-85087 Pin Tsop II Pb-freePin Vfbga 6 x 8 x 1 mm Package DiagramsPin Tsop II Issue Date Orig. Description of Change Document HistoryREV ECN no

CY62137EV30 specifications

Cypress Semiconductor, a well-established name in the semiconductor industry, offers a range of memory solutions, one of which is the CY62137EV30. This product is a high-performance CMOS SRAM (Static Random Access Memory) that has gained recognition for its versatility and reliability. The CY62137EV30 is designed for various applications requiring fast access times and low power consumption.

One of the main features of the CY62137EV30 is its high-speed operation, with access times as fast as 30 ns. This capability allows the device to provide quick read and write cycles, making it suitable for applications that demand rapid data processing. The memory device operates with a voltage supply of 3.0V to 3.6V, ensuring compatibility with low-voltage digital circuits.

The device boasts a large memory capacity of 512 Kbit, organized in a 64K x 8 configuration. This structure allows for efficient data storage and retrieval, catering to applications such as telecommunications, consumer electronics, and automotive systems, where reliable data handling is crucial. The integrated memory cell design further enhances its performance, providing better speed and efficiency compared to traditional memory solutions.

Another significant characteristic of the CY62137EV30 is its low power consumption. It features a low standby current, making it ideal for battery-operated devices where power efficiency is essential. This characteristic aligns with current industry trends focusing on energy-efficient designs, contributing to longer battery life and reduced operational costs.

The CY62137EV30 also incorporates advanced technologies, such as an easy-to-use asynchronous interface. This feature simplifies the integration of the SRAM into various systems, as it allows for straightforward communication without the need for complex control signals. Additionally, the device is designed to withstand extended temperature ranges, further enhancing its reliability in diverse environmental conditions.

In summary, the Cypress CY62137EV30 stands out due to its high-speed performance, significant storage capacity, low power consumption, and ease of integration. These features make it a preferred choice for a wide range of applications, ensuring that it meets the demands of modern electronic devices and systems. As the need for efficient memory solutions continues to grow, the CY62137EV30 positions itself as a key player in the SRAM market.