Cypress CY62137EV30 manual Maximum Ratings, Electrical Characteristics Over the Operating Range

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CY62137EV30 MoBL®

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

 

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

 

 

 

Potential

–0.3V to 3.9V (VCC(MAX) + 0.3V)

DC Voltage Applied to Outputs

 

 

in High-Z State[4, 5]

–0.3V to 3.9V (V

CC MAX

+ 0.3V)

 

 

 

Electrical Characteristics Over the Operating Range

DC Input Voltage[4, 5]

–0.3V to 3.9V (VCC MAX + 0.3V)

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch-up Current

> 200 mA

Operating Range

 

 

 

 

 

 

Ambient

VCC[6]

Device

Range Temperature

CY62137EV30-45LL Industrial –40°C to +85°C 2.2V to 3.6V

 

 

 

Test Conditions

 

 

 

45 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

 

 

 

 

 

 

Min.

Typ.[7]

Max.

Unit

VOH

Output HIGH Voltage

 

IOH = –0.1 mA

 

VCC = 2.20V

2.0

 

 

V

 

 

 

IOH = –1.0 mA

 

VCC = 2.70V

2.4

 

 

V

VOL

Output LOW Voltage

IOL = 0.1 mA

 

VCC = 2.20V

 

 

0.4

V

 

 

 

IOL = 2.1mA

 

VCC = 2.70V

 

 

0.4

V

VIH

Input HIGH Voltage

 

VCC = 2.2V to 2.7V

 

1.8

 

VCC + 0.3

V

 

 

 

VCC= 2.7V to 3.6V

 

2.2

 

VCC + 0.3

V

VIL

Input LOW Voltage

VCC = 2.2V to 2.7V

 

–0.3

 

0.6

V

 

 

 

VCC= 2.7V to 3.6V

 

–0.3

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

–1

 

+1

∝A

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–1

 

+1

∝A

 

Current

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating Supply

 

f = fMAX = 1/tRC

 

VCC = VCCmax

 

15

20

mA

 

Current

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

f = 1 MHz

 

 

 

2.0

2.5

 

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

ISB1

Automatic CE

 

 

1 > VCC – 0.2V, CE2 < 0.2V

 

1

7

∝A

 

CE

 

 

Power-down Current

 

VIN > VCC

– 0.2V, VIN < 0.2V)

 

 

 

 

 

— CMOS

 

f = fMAX

(Address and Data Only),

 

 

 

 

 

Inputs

 

f = 0 (OE and WE), VCC = 3.60V

 

 

 

 

ISB2

Automatic CE

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

1

7

∝A

 

CE

 

 

Power-down Current

 

VIN > VCC

– 0.2V or VIN < 0.2V,

 

 

 

 

 

— CMOS Inputs

 

f = 0, VCC

= 3.60V

 

 

 

 

 

Notes:

4.VIL(min.) = –2.0V for pulse durations less than 20 ns.

5.VIH(max)=VCC+0.75V for pulse durations less than 20ns.

6.Full Device AC operation assumes a 100 ∝s ramp time from 0 to Vcc(min) and 200 ∝s wait time after VCC stabilization.

7.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.

Document #: 38-05443 Rev. *B

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1Max Pin Configurations2Product Portfolio Vfbga Top View Tsop II Top ViewElectrical Characteristics Over the Operating Range Maximum RatingsOperating Range Data Retention Waveform10 Data Retention Characteristics Over the Operating RangeThermal Resistance AC Test Loads and WaveformsSwitching Characteristics Over the Operating Range 45 ns Parameter Description Unit Min Max Read CycleWrite Cycle Switching Waveforms Read Cycle 1 Address Transition Controlled15Read Cycle No OE Controlled16 Write Cycle No WE Controlled14, 18 Write Cycle No CE Controlled14, 18Data I/O Write Cycle No WE Controlled, OE LOW19 Write Cycle No BHE/BLE Controlled, OE LOW19DATAI/O Data CY62137EV30LL-45ZSXI 51-85087 Pin Tsop II Pb-free Inputs/Outputs Mode PowerOrdering Information BHE BLEPin Vfbga 6 x 8 x 1 mm Package DiagramsPin Tsop II Issue Date Orig. Description of Change Document HistoryREV ECN no

CY62137EV30 specifications

Cypress Semiconductor, a well-established name in the semiconductor industry, offers a range of memory solutions, one of which is the CY62137EV30. This product is a high-performance CMOS SRAM (Static Random Access Memory) that has gained recognition for its versatility and reliability. The CY62137EV30 is designed for various applications requiring fast access times and low power consumption.

One of the main features of the CY62137EV30 is its high-speed operation, with access times as fast as 30 ns. This capability allows the device to provide quick read and write cycles, making it suitable for applications that demand rapid data processing. The memory device operates with a voltage supply of 3.0V to 3.6V, ensuring compatibility with low-voltage digital circuits.

The device boasts a large memory capacity of 512 Kbit, organized in a 64K x 8 configuration. This structure allows for efficient data storage and retrieval, catering to applications such as telecommunications, consumer electronics, and automotive systems, where reliable data handling is crucial. The integrated memory cell design further enhances its performance, providing better speed and efficiency compared to traditional memory solutions.

Another significant characteristic of the CY62137EV30 is its low power consumption. It features a low standby current, making it ideal for battery-operated devices where power efficiency is essential. This characteristic aligns with current industry trends focusing on energy-efficient designs, contributing to longer battery life and reduced operational costs.

The CY62137EV30 also incorporates advanced technologies, such as an easy-to-use asynchronous interface. This feature simplifies the integration of the SRAM into various systems, as it allows for straightforward communication without the need for complex control signals. Additionally, the device is designed to withstand extended temperature ranges, further enhancing its reliability in diverse environmental conditions.

In summary, the Cypress CY62137EV30 stands out due to its high-speed performance, significant storage capacity, low power consumption, and ease of integration. These features make it a preferred choice for a wide range of applications, ensuring that it meets the demands of modern electronic devices and systems. As the need for efficient memory solutions continues to grow, the CY62137EV30 positions itself as a key player in the SRAM market.
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