Cypress CY62137EV30 manual Pin Tsop II

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CY62137EV30

MoBL®

Package Diagrams (continued)

44-Pin TSOP II (51-85087)

51-85087-*A

MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company names mentioned in this document may be the trademarks of their respective holders.

Document #: 38-05443 Rev. *B

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© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1Max Pin Configurations2Product Portfolio Vfbga Top View Tsop II Top ViewOperating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Data Retention Waveform10 Data Retention Characteristics Over the Operating RangeThermal Resistance AC Test Loads and WaveformsWrite Cycle Switching Characteristics Over the Operating Range45 ns Parameter Description Unit Min Max Read Cycle Read Cycle No OE Controlled16 Switching WaveformsRead Cycle 1 Address Transition Controlled15 Data I/O Write Cycle No WE Controlled14, 18Write Cycle No CE Controlled14, 18 DATAI/O Data Write Cycle No WE Controlled, OE LOW19Write Cycle No BHE/BLE Controlled, OE LOW19 CY62137EV30LL-45ZSXI 51-85087 Pin Tsop II Pb-free Inputs/Outputs Mode PowerOrdering Information BHE BLEPin Vfbga 6 x 8 x 1 mm Package DiagramsPin Tsop II REV ECN no Issue Date Orig. Description of ChangeDocument History

CY62137EV30 specifications

Cypress Semiconductor, a well-established name in the semiconductor industry, offers a range of memory solutions, one of which is the CY62137EV30. This product is a high-performance CMOS SRAM (Static Random Access Memory) that has gained recognition for its versatility and reliability. The CY62137EV30 is designed for various applications requiring fast access times and low power consumption.

One of the main features of the CY62137EV30 is its high-speed operation, with access times as fast as 30 ns. This capability allows the device to provide quick read and write cycles, making it suitable for applications that demand rapid data processing. The memory device operates with a voltage supply of 3.0V to 3.6V, ensuring compatibility with low-voltage digital circuits.

The device boasts a large memory capacity of 512 Kbit, organized in a 64K x 8 configuration. This structure allows for efficient data storage and retrieval, catering to applications such as telecommunications, consumer electronics, and automotive systems, where reliable data handling is crucial. The integrated memory cell design further enhances its performance, providing better speed and efficiency compared to traditional memory solutions.

Another significant characteristic of the CY62137EV30 is its low power consumption. It features a low standby current, making it ideal for battery-operated devices where power efficiency is essential. This characteristic aligns with current industry trends focusing on energy-efficient designs, contributing to longer battery life and reduced operational costs.

The CY62137EV30 also incorporates advanced technologies, such as an easy-to-use asynchronous interface. This feature simplifies the integration of the SRAM into various systems, as it allows for straightforward communication without the need for complex control signals. Additionally, the device is designed to withstand extended temperature ranges, further enhancing its reliability in diverse environmental conditions.

In summary, the Cypress CY62137EV30 stands out due to its high-speed performance, significant storage capacity, low power consumption, and ease of integration. These features make it a preferred choice for a wide range of applications, ensuring that it meets the demands of modern electronic devices and systems. As the need for efficient memory solutions continues to grow, the CY62137EV30 positions itself as a key player in the SRAM market.
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