Cypress CY62137EV30 manual Document History, REV ECN no, Issue Date Orig. Description of Change

Page 12

CY62137EV30

MoBL®

Document History Page

Document Title: CY62137EV30 MoBL® 2-Mbit (128K x 16) Static RAM

Document Number: 38-05443

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

 

**

203720

See ECN

AJU

New Data Sheet

 

 

 

 

 

 

*A

234196

See ECN

AJU

Changed ICC MAX at f=1MHz from 1.7 mA to 2.0 mA

 

 

 

 

Changed ICC TYP from 12 mA (35 ns speed bin) and 10 mA (45 ns speed

 

 

 

 

bin) to 15 mA and 12 mA respectively

 

 

 

 

Changed ICC MAX from 20 mA (35 ns speed bin) and 15 mA (45 ns speed

 

 

 

 

bin) to 25 mA and 20 mA respectively

 

 

 

 

Changed ISB1 and ISB2

TYP from 0.6 A to 0.7 A

 

 

 

 

Changed ISB1 and ISB2

MAX from 1.5 A to 2.5 A

 

 

 

 

Changed ICCDR from 1

A to 2 A

 

 

 

 

Fixed typos on TSOP II pinout:

 

 

 

 

Pin 18-22: address lines

 

 

 

 

Pin 23: NC

 

 

 

 

 

Added Pb-free information

*B

427817

See ECN

NXR

Converted from Advanced Information to Final.

 

 

 

 

Removed 35 ns Speed Bin

 

 

 

 

Removed “L” version

 

 

 

 

 

Changed ball E3 from DNU to NC.

 

 

 

 

Removed the redundant footnote on DNU.

 

 

 

 

Moved Product Portfolio from Page # 3 to Page #2.

 

 

 

 

Changed ICC (Max) value from 2 mA to 2.5 mA and ICC (Typ) value from

 

 

 

 

1.5 mA to 2 mA at f=1 MHz

 

 

 

 

Changed ICC (Typ) value from 12 mA to 15 mA at f = fmax=1/tRC

 

 

 

 

Changed ISB1 and ISB2 Typ. values from 0.7 A to 1 A and Max. values from

 

 

 

 

2.5 A to 7 A.

 

 

 

 

 

Changed VCC stabilization time in footnote #7 from 100 s to 200 s

 

 

 

 

Changed the AC test load capacitance from 50pF to 30pF on Page# 4

 

 

 

 

Changed VDR from 1.5V to 1V on Page# 4.

 

 

 

 

Changed ICCDR from 2 A to 3 A.

 

 

 

 

Added ICCDR typical value.

 

 

 

 

Corrected tR in Data Retention Characteristics from 100 s to tRC ns

 

 

 

 

Changed tOHA , tLZCE and tLZWE from 6 ns to 10 ns

 

 

 

 

Changed tLZBE from 6 ns to 5 ns

 

 

 

 

Changed tLZOE from 3 ns to 5 ns

 

 

 

 

Changed tHZOE, tHZCE, tHZBE and tHZWE from 15 ns to 18 ns

 

 

 

 

Changed tSCE,tAW and tBW from 40 ns to 35 ns

 

 

 

 

Changed tPWE from 30 ns to 35 ns

 

 

 

 

Changed tSD from 20 ns to 25 ns

 

 

 

 

Updated the Ordering Information table and replaced the Package Name

 

 

 

 

column with Package Diagram.

Document #: 38-05443 Rev. *B

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configurations2 Product PortfolioVfbga Top View Tsop II Top View MaxElectrical Characteristics Over the Operating Range Maximum RatingsOperating Range Data Retention Characteristics Over the Operating Range Thermal ResistanceAC Test Loads and Waveforms Data Retention Waveform10Switching Characteristics Over the Operating Range 45 ns Parameter Description Unit Min Max Read CycleWrite Cycle Switching Waveforms Read Cycle 1 Address Transition Controlled15Read Cycle No OE Controlled16 Write Cycle No WE Controlled14, 18 Write Cycle No CE Controlled14, 18Data I/O Write Cycle No WE Controlled, OE LOW19 Write Cycle No BHE/BLE Controlled, OE LOW19DATAI/O Data Inputs/Outputs Mode Power Ordering InformationBHE BLE CY62137EV30LL-45ZSXI 51-85087 Pin Tsop II Pb-freePackage Diagrams Pin Vfbga 6 x 8 x 1 mmPin Tsop II Issue Date Orig. Description of Change Document HistoryREV ECN no

CY62137EV30 specifications

Cypress Semiconductor, a well-established name in the semiconductor industry, offers a range of memory solutions, one of which is the CY62137EV30. This product is a high-performance CMOS SRAM (Static Random Access Memory) that has gained recognition for its versatility and reliability. The CY62137EV30 is designed for various applications requiring fast access times and low power consumption.

One of the main features of the CY62137EV30 is its high-speed operation, with access times as fast as 30 ns. This capability allows the device to provide quick read and write cycles, making it suitable for applications that demand rapid data processing. The memory device operates with a voltage supply of 3.0V to 3.6V, ensuring compatibility with low-voltage digital circuits.

The device boasts a large memory capacity of 512 Kbit, organized in a 64K x 8 configuration. This structure allows for efficient data storage and retrieval, catering to applications such as telecommunications, consumer electronics, and automotive systems, where reliable data handling is crucial. The integrated memory cell design further enhances its performance, providing better speed and efficiency compared to traditional memory solutions.

Another significant characteristic of the CY62137EV30 is its low power consumption. It features a low standby current, making it ideal for battery-operated devices where power efficiency is essential. This characteristic aligns with current industry trends focusing on energy-efficient designs, contributing to longer battery life and reduced operational costs.

The CY62137EV30 also incorporates advanced technologies, such as an easy-to-use asynchronous interface. This feature simplifies the integration of the SRAM into various systems, as it allows for straightforward communication without the need for complex control signals. Additionally, the device is designed to withstand extended temperature ranges, further enhancing its reliability in diverse environmental conditions.

In summary, the Cypress CY62137EV30 stands out due to its high-speed performance, significant storage capacity, low power consumption, and ease of integration. These features make it a preferred choice for a wide range of applications, ensuring that it meets the demands of modern electronic devices and systems. As the need for efficient memory solutions continues to grow, the CY62137EV30 positions itself as a key player in the SRAM market.