Cypress CY62137EV30 manual Write Cycle No WE Controlled, OE LOW19, DATAI/O Data

Page 8

CY62137EV30

MoBL®

Switching Waveforms (continued)

Write Cycle No. 3 (WE Controlled, OE LOW)[19]

 

 

tWC

ADDRESS

 

 

 

 

tSCE

CE

 

 

BHE/BLE

 

tBW

 

tAW

tHA

 

tSA

tPWE

WE

 

 

 

 

tHD

 

 

tSD

DATAI/O

NOTE 20

DATAIN

 

tHZWE

tLZWE

Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[19]

 

 

tWC

 

ADDRESS

 

 

 

CE

 

 

 

 

 

tSCE

 

 

tAW

 

tHA

BHE/BLE

 

tBW

 

 

 

 

 

tSA

 

 

WE

 

tPWE

 

 

tHZWE

t

tHD

 

 

SD

 

DATA I/O

NOTE 20

DATAIN

 

 

 

 

tLZWE

Document #: 38-05443 Rev. *B

Page 8 of 12

[+] Feedback

Image 8
Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configurations2 Product PortfolioVfbga Top View Tsop II Top View MaxOperating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Data Retention Characteristics Over the Operating Range Thermal ResistanceAC Test Loads and Waveforms Data Retention Waveform10Write Cycle Switching Characteristics Over the Operating Range45 ns Parameter Description Unit Min Max Read Cycle Read Cycle No OE Controlled16 Switching WaveformsRead Cycle 1 Address Transition Controlled15 Data I/O Write Cycle No WE Controlled14, 18Write Cycle No CE Controlled14, 18 DATAI/O Data Write Cycle No WE Controlled, OE LOW19Write Cycle No BHE/BLE Controlled, OE LOW19 Inputs/Outputs Mode Power Ordering InformationBHE BLE CY62137EV30LL-45ZSXI 51-85087 Pin Tsop II Pb-freePackage Diagrams Pin Vfbga 6 x 8 x 1 mmPin Tsop II REV ECN no Issue Date Orig. Description of ChangeDocument History

CY62137EV30 specifications

Cypress Semiconductor, a well-established name in the semiconductor industry, offers a range of memory solutions, one of which is the CY62137EV30. This product is a high-performance CMOS SRAM (Static Random Access Memory) that has gained recognition for its versatility and reliability. The CY62137EV30 is designed for various applications requiring fast access times and low power consumption.

One of the main features of the CY62137EV30 is its high-speed operation, with access times as fast as 30 ns. This capability allows the device to provide quick read and write cycles, making it suitable for applications that demand rapid data processing. The memory device operates with a voltage supply of 3.0V to 3.6V, ensuring compatibility with low-voltage digital circuits.

The device boasts a large memory capacity of 512 Kbit, organized in a 64K x 8 configuration. This structure allows for efficient data storage and retrieval, catering to applications such as telecommunications, consumer electronics, and automotive systems, where reliable data handling is crucial. The integrated memory cell design further enhances its performance, providing better speed and efficiency compared to traditional memory solutions.

Another significant characteristic of the CY62137EV30 is its low power consumption. It features a low standby current, making it ideal for battery-operated devices where power efficiency is essential. This characteristic aligns with current industry trends focusing on energy-efficient designs, contributing to longer battery life and reduced operational costs.

The CY62137EV30 also incorporates advanced technologies, such as an easy-to-use asynchronous interface. This feature simplifies the integration of the SRAM into various systems, as it allows for straightforward communication without the need for complex control signals. Additionally, the device is designed to withstand extended temperature ranges, further enhancing its reliability in diverse environmental conditions.

In summary, the Cypress CY62137EV30 stands out due to its high-speed performance, significant storage capacity, low power consumption, and ease of integration. These features make it a preferred choice for a wide range of applications, ensuring that it meets the demands of modern electronic devices and systems. As the need for efficient memory solutions continues to grow, the CY62137EV30 positions itself as a key player in the SRAM market.