Cypress CY62137EV30 manual Switching Characteristics Over the Operating Range, Write Cycle

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CY62137EV30

MoBL®

Switching Characteristics Over the Operating Range [11]

 

 

 

 

 

 

 

 

 

 

45 ns

 

Parameter

 

 

 

 

 

 

 

Description

 

 

 

Unit

 

 

 

 

 

 

 

Min.

 

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

45

 

 

ns

tAA

 

Address to Data Valid

 

 

45

ns

tOHA

 

Data Hold from Address Change

10

 

 

ns

tACE

 

 

 

 

LOW to Data Valid

 

 

45

ns

CE

 

tDOE

 

 

 

 

LOW to Data Valid

 

 

22

ns

OE

 

tLZOE

 

 

 

 

LOW to LOW Z[12]

5

 

 

ns

OE

 

 

tHZOE

 

 

 

 

HIGH to High Z[12, 13]

 

 

18

ns

OE

 

t

 

 

 

LOW to Low Z[12]

10

 

 

ns

CE

 

 

LZCE

 

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

HIGH to High Z[12, 13]

 

 

18

ns

CE

 

HZCE

 

 

 

 

 

 

 

 

 

 

 

 

tPU

 

 

 

LOW to Power-Up

0

 

 

ns

CE

 

 

tPD

 

 

 

HIGH to Power-Down

 

 

45

ns

CE

 

tDBE

 

 

 

 

 

 

 

 

 

 

45

ns

BLE/BHE LOW to Data Valid

 

tLZBE

 

 

 

 

 

 

 

 

5

 

 

ns

BLE/BHE LOW to Low Z[12]

 

 

tHZBE

 

 

 

 

 

 

 

 

 

 

18

ns

BLE/BHE HIGH to HIGH Z[12, 13]

 

Write Cycle[14]

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

45

 

 

ns

tSCE

 

 

 

LOW to Write End

35

 

 

ns

CE

 

 

tAW

 

Address Set-Up to Write End

35

 

 

ns

tHA

 

Address Hold from Write End

0

 

 

ns

tSA

 

Address Set-Up to Write Start

0

 

 

ns

tPWE

 

 

 

 

Pulse Width

35

 

 

ns

WE

 

 

tBW

 

 

 

 

 

 

 

 

35

 

 

ns

BLE/BHE LOW to Write End

 

 

tSD

 

Data Set-Up to Write End

25

 

 

ns

tHD

 

Data Hold from Write End

0

 

 

ns

t

 

 

 

 

LOW to High-Z[12, 13]

 

 

18

ns

WE

 

HZWE

 

 

 

 

 

 

 

 

 

 

 

 

tLZWE

 

 

 

 

HIGH to Low-Z[12]

10

 

 

ns

WE

 

 

Notes:

10.BHE.BLE is the AND of both BHE and BLE. The chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

11.Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.

12.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

13.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high- impedance state.

14.The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.

Document #: 38-05443 Rev. *B

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationProduct Portfolio Pin Configurations2Vfbga Top View Tsop II Top View MaxOperating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Thermal Resistance Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention Waveform10Write Cycle Switching Characteristics Over the Operating Range45 ns Parameter Description Unit Min Max Read Cycle Read Cycle No OE Controlled16 Switching WaveformsRead Cycle 1 Address Transition Controlled15 Data I/O Write Cycle No WE Controlled14, 18Write Cycle No CE Controlled14, 18 DATAI/O Data Write Cycle No WE Controlled, OE LOW19Write Cycle No BHE/BLE Controlled, OE LOW19 Ordering Information Inputs/Outputs Mode PowerBHE BLE CY62137EV30LL-45ZSXI 51-85087 Pin Tsop II Pb-freePin Vfbga 6 x 8 x 1 mm Package DiagramsPin Tsop II REV ECN no Issue Date Orig. Description of ChangeDocument History

CY62137EV30 specifications

Cypress Semiconductor, a well-established name in the semiconductor industry, offers a range of memory solutions, one of which is the CY62137EV30. This product is a high-performance CMOS SRAM (Static Random Access Memory) that has gained recognition for its versatility and reliability. The CY62137EV30 is designed for various applications requiring fast access times and low power consumption.

One of the main features of the CY62137EV30 is its high-speed operation, with access times as fast as 30 ns. This capability allows the device to provide quick read and write cycles, making it suitable for applications that demand rapid data processing. The memory device operates with a voltage supply of 3.0V to 3.6V, ensuring compatibility with low-voltage digital circuits.

The device boasts a large memory capacity of 512 Kbit, organized in a 64K x 8 configuration. This structure allows for efficient data storage and retrieval, catering to applications such as telecommunications, consumer electronics, and automotive systems, where reliable data handling is crucial. The integrated memory cell design further enhances its performance, providing better speed and efficiency compared to traditional memory solutions.

Another significant characteristic of the CY62137EV30 is its low power consumption. It features a low standby current, making it ideal for battery-operated devices where power efficiency is essential. This characteristic aligns with current industry trends focusing on energy-efficient designs, contributing to longer battery life and reduced operational costs.

The CY62137EV30 also incorporates advanced technologies, such as an easy-to-use asynchronous interface. This feature simplifies the integration of the SRAM into various systems, as it allows for straightforward communication without the need for complex control signals. Additionally, the device is designed to withstand extended temperature ranges, further enhancing its reliability in diverse environmental conditions.

In summary, the Cypress CY62137EV30 stands out due to its high-speed performance, significant storage capacity, low power consumption, and ease of integration. These features make it a preferred choice for a wide range of applications, ensuring that it meets the demands of modern electronic devices and systems. As the need for efficient memory solutions continues to grow, the CY62137EV30 positions itself as a key player in the SRAM market.