Cypress CY7C1218H manual Features, Functional Description1, Logic Block Diagram

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CY7C1218H

1-Mbit (32K x36) Pipelined Sync SRAM

Features

Registered inputs and outputs for pipelined operation

32K × 36 common I/O architecture

3.3V core power supply (VDD)

2.5V/3.3V I/O power supply (VDDQ)

Fast clock-to-output times

— 3.5 ns (for 166-MHz device)

Provide high-performance 3-1-1-1 access rate

User-selectable burst counter supporting Intel

Pentium interleaved or linear burst sequences

Separate processor and controller address strobes

Synchronous self-timed write

Asynchronous output enable

Available in JEDEC-standard lead-free 100-Pin TQFP package

“ZZ” Sleep Mode Option

Functional Description[1]

The CY7C1218H SRAM integrates 32K x 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to four bytes wide as controlled by the Byte Write control inputs. GW when active LOW causes all bytes to be written.

The CY7C1218H operates from a +3.3V core power supply while all outputs may operate either with a +2.5V or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.

Logic Block Diagram

 

 

 

 

 

 

 

 

A0, A1, A

ADDRESS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REGISTER

 

2

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

 

 

 

 

 

 

 

ADV

 

 

 

Q1

 

 

 

 

 

CLK

 

 

BURST

 

 

 

 

 

 

 

COUNTER

 

 

 

 

 

 

 

CLR

AND

Q0

 

 

 

 

 

ADSC

 

 

LOGIC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

 

 

 

DQD,DQD

 

 

DQD ,DQPD

 

 

 

 

 

BWD

BYTE

 

 

BYTE

 

 

 

 

 

 

WRITE REGISTER

 

 

WRITE DRIVER

 

 

 

 

 

 

DQC,DQPC

 

 

DQC ,DQPC

 

 

 

 

DQs

BWC

BYTE

 

 

BYTE

 

 

 

 

 

 

 

 

 

OUTPUT

DQPA

 

WRITE REGISTER

 

 

WRITE DRIVER

MEMORY

SENSE

OUTPUT

 

 

 

BUFFERS

 

 

 

 

 

ARRAY

REGISTERS

DQPB

 

 

 

 

DQB,DQPB

AMPS

E

 

DQB,DQPB

 

 

 

 

 

DQPC

 

 

 

BYTE

 

 

 

 

BWB

BYTE

 

 

 

 

 

 

DQPD

 

 

WRITE DRIVER

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQA ,DQPA

 

 

DQA,DQPA

 

 

 

 

 

 

 

 

BYTE

 

 

 

 

 

BWA

BYTE

 

 

 

 

 

 

 

 

 

WRITE DRIVER

 

 

 

 

 

BWE

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GW

 

 

 

 

 

 

 

 

INPUT

ENABLE

PIPELINED

 

 

 

 

 

REGISTERS

CE1

REGISTER

 

 

 

 

 

 

ENABLE

 

 

 

 

 

 

CE2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE3

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

 

 

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

 

 

 

 

 

 

 

 

 

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation

198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05667 Rev. *B

 

Revised July 6, 2006

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationSelection Guide Pin Configuration Pin TqfpCY7C1218H 166 MHz 133 MHz UnitPin Definitions Functional Overview Sleep ModeBurst Sequences First Second Third Fourth Address A1, A0 Interleaved Burst Address Table Mode = Floating or VDDNext Cycle Add. Used WriteFunction Truth Table for Read/Write 2Operating Range Maximum RatingsAmbient Range Description Test Conditions Min Max UnitThermal Resistance Capacitance10AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 11 Read Cycle Timing17 Switching WaveformsADV Write Cycle Timing17CLZ Read/Write Cycle Timing17, 19DON’T Care ZZ Mode Timing21Ordering Information Pin Tqfp 14 x 20 x 1.4 mm Package DiagramDocument History Issue Date Orig. Description of Change

CY7C1218H specifications

The Cypress CY7C1218H is a high-performance synchronous static random-access memory (SRAM) device designed to meet the demanding requirements of advanced memory applications. This SRAM boasts a density of 2 Mbits, making it suitable for a variety of uses, including telecommunications, industrial, and consumer electronics.

One of the main features of the CY7C1218H is its fast access time, which ranges from 10 ns to 15 ns, depending on the specific configuration. This high-speed access allows for efficient read/write operations and ensures that the memory can keep pace with the needs of high-speed processors and data buses. The device operates with a single 3.3V supply, enhancing its compatibility with modern digital circuits and reducing power consumption.

The CY7C1218H employs a synchronous interface that simplifies the control signaling process and increases data transfer rates. This synchronous nature means that the operation of the chip is synchronized with an external clock, facilitating faster and more reliable data transfer between the memory and the host system. This is particularly beneficial in high-performance applications where latency and throughput are critical.

In addition to its speed and efficiency, the CY7C1218H features a low standby power mode. This is an essential characteristic for battery-powered and energy-efficient systems, as it significantly reduces power consumption when the device is not actively in use. The SRAM design also includes a write protect feature, enhancing data integrity and security in sensitive applications.

The device is packaged in a 44-pin TSOP (Thin Small Outline Package) and has a compact footprint, making it suitable for space-constrained designs. The CY7C1218H uses advanced CMOS technology to support reliable performance and long data retention, ensuring that stored data remains intact even during power-down cycles.

Overall, the Cypress CY7C1218H represents a robust solution for engineers looking to integrate high-speed, low-power SRAM into their designs. Its blend of speed, reliability, and efficiency makes it an excellent choice for applications requiring fast access and secure data storage, making it a staple in various electronic systems across different industries.