Cypress CY7C1218H manual Document History, Issue Date Orig. Description of Change

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CY7C1218H

Document History Page

Document Title: CY7C1218H 1-Mbit (32K x36) Pipelined Sync SRAM

Document Number: 38-05667

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

**

343896

See ECN

PCI

New Data Sheet

 

 

 

 

 

*A

430678

See ECN

NXR

Changed address of Cypress Semiconductor Corporation on Page# 1 from

 

 

 

 

“3901 North First Street” to “198 Champion Court”

 

 

 

 

Added 2.5VI/O option

 

 

 

 

Changed Three-State to Tri-State

 

 

 

 

Included Maximum Ratings for VDDQ relative to GND

 

 

 

 

Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the

 

 

 

 

Electrical Characteristics Table

 

 

 

 

Modified test condition from VIH < VDD to VIH < VDD

 

 

 

 

Replaced Package Name column with Package Diagram in the Ordering

 

 

 

 

Information table

*B

481916

See ECN

VKN

Converted from Preliminary to Final.

 

 

 

 

Updated the Ordering Information table.

Document #: 38-05667 Rev. *B

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configuration Pin Tqfp Selection GuideCY7C1218H 166 MHz 133 MHz UnitPin Definitions Functional Overview Sleep ModeBurst Sequences Interleaved Burst Address Table Mode = Floating or VDD First Second Third Fourth Address A1, A0Next Cycle Add. Used WriteTruth Table for Read/Write 2 FunctionMaximum Ratings Operating RangeAmbient Range Description Test Conditions Min Max UnitThermal Resistance Capacitance10AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 11 Switching Waveforms Read Cycle Timing17Write Cycle Timing17 ADVRead/Write Cycle Timing17, 19 CLZZZ Mode Timing21 DON’T CareOrdering Information Package Diagram Pin Tqfp 14 x 20 x 1.4 mmIssue Date Orig. Description of Change Document History

CY7C1218H specifications

The Cypress CY7C1218H is a high-performance synchronous static random-access memory (SRAM) device designed to meet the demanding requirements of advanced memory applications. This SRAM boasts a density of 2 Mbits, making it suitable for a variety of uses, including telecommunications, industrial, and consumer electronics.

One of the main features of the CY7C1218H is its fast access time, which ranges from 10 ns to 15 ns, depending on the specific configuration. This high-speed access allows for efficient read/write operations and ensures that the memory can keep pace with the needs of high-speed processors and data buses. The device operates with a single 3.3V supply, enhancing its compatibility with modern digital circuits and reducing power consumption.

The CY7C1218H employs a synchronous interface that simplifies the control signaling process and increases data transfer rates. This synchronous nature means that the operation of the chip is synchronized with an external clock, facilitating faster and more reliable data transfer between the memory and the host system. This is particularly beneficial in high-performance applications where latency and throughput are critical.

In addition to its speed and efficiency, the CY7C1218H features a low standby power mode. This is an essential characteristic for battery-powered and energy-efficient systems, as it significantly reduces power consumption when the device is not actively in use. The SRAM design also includes a write protect feature, enhancing data integrity and security in sensitive applications.

The device is packaged in a 44-pin TSOP (Thin Small Outline Package) and has a compact footprint, making it suitable for space-constrained designs. The CY7C1218H uses advanced CMOS technology to support reliable performance and long data retention, ensuring that stored data remains intact even during power-down cycles.

Overall, the Cypress CY7C1218H represents a robust solution for engineers looking to integrate high-speed, low-power SRAM into their designs. Its blend of speed, reliability, and efficiency makes it an excellent choice for applications requiring fast access and secure data storage, making it a staple in various electronic systems across different industries.
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