Cypress CY7C1218H manual Write Cycle Timing17, Adv

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CY7C1218H

Switching Waveforms (continued)

Write Cycle Timing[17, 18]

CLK

ADSP

ADSC

ADDRESS

BWE,

BW[A :D]

ADV

Data In (D)

		tCYC
	tCH	tCL
tADS	tADH
		tADS	tADH	ADSC extends burst
		tADS	tADH	tADS	tADH
				tADS	tADH
tAS	tAH
	A1			A2	A3
	Byte write signals are
	ignored for first cycle when				tWES tWEH
	ADSP initiates burst				tWES tWEH

tWES tWEH

tCES	tCEH
								tADVS tADVH
				ADV suspends burst
	tDS tDH
High-Z	D(A1)	D(A2)	D(A2 + 1)	D(A2 + 1)	D(A2 + 2)	D(A2 + 3)	D(A3)	D(A3 + 1)	D(A3 + 2)
	t
	OEHZ

Data Out (Q)

BURST READ	Single WRITE	BURST WRITE
	DON’T CARE	UNDEFINED

Note:

18. Full width Write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW[A: D] LOW.

Extended BURST WRITE

Document #: 38-05667 Rev. *B

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1166 MHz 133 MHz Unit Pin Configuration Pin TqfpSelection Guide CY7C1218HPin Definitions Burst Sequences Sleep ModeFunctional Overview Write Interleaved Burst Address Table Mode = Floating or VDDFirst Second Third Fourth Address A1, A0 Next Cycle Add. UsedFunction Truth Table for Read/Write 2Description Test Conditions Min Max Unit Maximum RatingsOperating Range Ambient RangeAC Test Loads and Waveforms Capacitance10Thermal Resistance Switching Characteristics Over the Operating Range 11 Read Cycle Timing17 Switching WaveformsADV Write Cycle Timing17CLZ Read/Write Cycle Timing17, 19DON’T Care ZZ Mode Timing21Ordering Information Pin Tqfp 14 x 20 x 1.4 mm Package DiagramDocument History Issue Date Orig. Description of Change

CY7C1218H specifications

The Cypress CY7C1218H is a high-performance synchronous static random-access memory (SRAM) device designed to meet the demanding requirements of advanced memory applications. This SRAM boasts a density of 2 Mbits, making it suitable for a variety of uses, including telecommunications, industrial, and consumer electronics.

One of the main features of the CY7C1218H is its fast access time, which ranges from 10 ns to 15 ns, depending on the specific configuration. This high-speed access allows for efficient read/write operations and ensures that the memory can keep pace with the needs of high-speed processors and data buses. The device operates with a single 3.3V supply, enhancing its compatibility with modern digital circuits and reducing power consumption.

The CY7C1218H employs a synchronous interface that simplifies the control signaling process and increases data transfer rates. This synchronous nature means that the operation of the chip is synchronized with an external clock, facilitating faster and more reliable data transfer between the memory and the host system. This is particularly beneficial in high-performance applications where latency and throughput are critical.

In addition to its speed and efficiency, the CY7C1218H features a low standby power mode. This is an essential characteristic for battery-powered and energy-efficient systems, as it significantly reduces power consumption when the device is not actively in use. The SRAM design also includes a write protect feature, enhancing data integrity and security in sensitive applications.

The device is packaged in a 44-pin TSOP (Thin Small Outline Package) and has a compact footprint, making it suitable for space-constrained designs. The CY7C1218H uses advanced CMOS technology to support reliable performance and long data retention, ensuring that stored data remains intact even during power-down cycles.

Overall, the Cypress CY7C1218H represents a robust solution for engineers looking to integrate high-speed, low-power SRAM into their designs. Its blend of speed, reliability, and efficiency makes it an excellent choice for applications requiring fast access and secure data storage, making it a staple in various electronic systems across different industries.