Cypress CY7C1218H manual Truth Table for Read/Write 2, Function

Page 6

CY7C1218H

Truth Table[2, 3, 4, 5, 6, 7] (continued)

Next Cycle

Add. Used

ZZ

 

CE1

 

CE2

 

CE3

ADSP

ADSC

 

ADV

 

 

OE

 

DQ

Write

Continue Write

Next

L

 

X

 

X

 

 

X

H

H

 

 

H

 

 

 

X

 

Tri-State

Write

Continue Write

Next

L

 

H

 

X

 

 

X

X

H

 

 

H

 

 

 

X

 

Tri-State

Write

Suspend Write

Current

L

 

X

 

X

 

 

X

H

H

 

 

H

 

 

 

X

 

Tri-State

Write

Suspend Write

Current

L

 

H

 

X

 

 

X

X

H

 

 

H

 

 

 

X

 

Tri-State

Write

ZZ “Sleep”

None

H

 

X

 

X

 

 

X

X

X

 

 

X

 

 

 

X

 

Tri-State

 

X

Truth Table for Read/Write[2, 3]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Function

 

 

 

 

 

GW

 

 

BWE

 

 

BW

D

 

 

 

BW

C

 

 

BW

B

 

BW

A

Read

 

 

 

 

 

 

 

H

 

H

 

 

 

X

 

 

 

X

 

 

X

 

X

Read

 

 

 

 

 

 

 

H

 

L

 

 

 

H

 

 

 

H

 

 

H

 

H

Write Byte A – (DQA and DQPA)

 

 

 

 

 

 

H

 

L

 

 

 

H

 

 

 

H

 

 

H

 

L

Write Byte B – (DQB and DQPB)

 

 

 

 

 

 

H

 

L

 

 

 

H

 

 

 

H

 

 

L

 

H

Write Bytes B, A

 

 

 

 

 

 

 

H

 

L

 

 

 

H

 

 

 

H

 

 

L

 

L

Write Byte C – (DQC and DQPC)

 

 

 

 

 

 

H

 

L

 

 

 

H

 

 

 

L

 

 

H

 

H

Write Bytes C, A

 

 

 

 

 

 

 

H

 

L

 

 

 

H

 

 

 

L

 

 

H

 

L

Write Bytes C, B

 

 

 

 

 

 

 

H

 

L

 

 

 

H

 

 

 

L

 

 

L

 

H

Write Bytes C, B, A

 

 

 

 

 

 

H

 

L

 

 

 

H

 

 

 

L

 

 

L

 

L

Write Byte D – (DQD and DQPD)

 

 

 

 

 

 

H

 

L

 

 

 

L

 

 

 

H

 

 

H

 

H

Write Bytes D, A

 

 

 

 

 

 

 

H

 

L

 

 

 

L

 

 

 

H

 

 

H

 

L

Write Bytes D, B

 

 

 

 

 

 

 

H

 

L

 

 

 

L

 

 

 

H

 

 

L

 

H

Write Bytes D, B, A

 

 

 

 

 

 

H

 

L

 

 

 

L

 

 

 

H

 

 

L

 

L

Write Bytes D, C

 

 

 

 

 

 

 

H

 

L

 

 

 

L

 

 

 

L

 

 

H

 

H

Write Bytes D, C, A

 

 

 

 

 

 

H

 

L

 

 

 

L

 

 

 

L

 

 

H

 

L

Write Bytes D, C, B

 

 

 

 

 

 

H

 

L

 

 

 

L

 

 

 

L

 

 

L

 

H

Write All Bytes

 

 

 

 

 

 

 

H

 

L

 

 

 

L

 

 

 

L

 

 

L

 

L

Write All Bytes

 

 

 

 

 

 

 

L

 

X

 

 

 

X

 

 

 

X

 

 

X

 

X

Document #: 38-05667 Rev. *B

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Contents Functional Description1 FeaturesLogic Block Diagram Cypress Semiconductor CorporationCY7C1218H Pin Configuration Pin TqfpSelection Guide 166 MHz 133 MHz UnitPin Definitions Sleep Mode Functional OverviewBurst Sequences Next Cycle Add. Used Interleaved Burst Address Table Mode = Floating or VDDFirst Second Third Fourth Address A1, A0 WriteTruth Table for Read/Write 2 FunctionAmbient Range Maximum RatingsOperating Range Description Test Conditions Min Max UnitCapacitance10 Thermal ResistanceAC Test Loads and Waveforms Switching Characteristics Over the Operating Range 11 Switching Waveforms Read Cycle Timing17Write Cycle Timing17 ADVRead/Write Cycle Timing17, 19 CLZZZ Mode Timing21 DON’T CareOrdering Information Package Diagram Pin Tqfp 14 x 20 x 1.4 mmIssue Date Orig. Description of Change Document History

CY7C1218H specifications

The Cypress CY7C1218H is a high-performance synchronous static random-access memory (SRAM) device designed to meet the demanding requirements of advanced memory applications. This SRAM boasts a density of 2 Mbits, making it suitable for a variety of uses, including telecommunications, industrial, and consumer electronics.

One of the main features of the CY7C1218H is its fast access time, which ranges from 10 ns to 15 ns, depending on the specific configuration. This high-speed access allows for efficient read/write operations and ensures that the memory can keep pace with the needs of high-speed processors and data buses. The device operates with a single 3.3V supply, enhancing its compatibility with modern digital circuits and reducing power consumption.

The CY7C1218H employs a synchronous interface that simplifies the control signaling process and increases data transfer rates. This synchronous nature means that the operation of the chip is synchronized with an external clock, facilitating faster and more reliable data transfer between the memory and the host system. This is particularly beneficial in high-performance applications where latency and throughput are critical.

In addition to its speed and efficiency, the CY7C1218H features a low standby power mode. This is an essential characteristic for battery-powered and energy-efficient systems, as it significantly reduces power consumption when the device is not actively in use. The SRAM design also includes a write protect feature, enhancing data integrity and security in sensitive applications.

The device is packaged in a 44-pin TSOP (Thin Small Outline Package) and has a compact footprint, making it suitable for space-constrained designs. The CY7C1218H uses advanced CMOS technology to support reliable performance and long data retention, ensuring that stored data remains intact even during power-down cycles.

Overall, the Cypress CY7C1218H represents a robust solution for engineers looking to integrate high-speed, low-power SRAM into their designs. Its blend of speed, reliability, and efficiency makes it an excellent choice for applications requiring fast access and secure data storage, making it a staple in various electronic systems across different industries.
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