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| CY7C1329H | |||
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| Pin Definitions |
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| Name | I/O |
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| A0, A1, A | Input- | Address Inputs used | to select one of the 64K address locations. Sampled at the rising edge | ||||||||||||||||||||
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| Synchronous | of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A1, A0 | |||||||||||
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| feed the |
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| A, |
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| B, | Input- | Byte Write Select Inputs, active LOW. Qualified with |
| to conduct Byte Writes to the SRAM. | ||||||||||||
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| BW | BW | BWE | |||||||||||||||||||||
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| BWC, BWD | Synchronous | Sampled on the rising edge of CLK. |
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| Input- | Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global | |||||||||||||
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| GW | |||||||||||||||||||||||
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| Synchronous | Write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and BWE). | |||||||||||
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| Input- | Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be | |||||||||||||
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| BWE | |||||||||||||||||||||||
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| Synchronous | asserted LOW to conduct a Byte Write. |
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| CLK | Input- | Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the | |||||||||||||||||||||
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| Clock | burst counter when ADV is asserted LOW, during a burst operation. |
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| 1 |
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| Input- | Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with | |||||||||||||||||
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| CE | |||||||||||||||||||||||
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| Synchronous | CE2 and CE to select/deselect the device. ADSP is ignored if CE | 1 | is HIGH. CE | 1 | is sampled only | |||||||
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| 3 |
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| when a new external address is loaded. |
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| CE2 | Input- | Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with | |||||||||||||||||||||
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| Synchronous | CE1 and CE3 to select/deselect the device. CE2 is sampled only when a new external address is | |||||||||||
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| 3 |
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| Input- | Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with | |||||||||||||||||
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| Synchronous | CE1 and CE2 to select/deselect the device. Not connected for BGA. Where referenced, CE3 is | |||||||||||
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| assumed active throughout this document for BGA. CE3 is sampled only when a new external | |||||||||
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| address is loaded. |
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| Input- | Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When | ||||||||||||||||
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| OE | |||||||||||||||||||||||
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| Asynchronous | LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are | |||||||||||
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| input data pins. OE is masked during the first clock of a Read cycle when emerging from a | |||||||||
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| deselected state. |
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| Input- | Advance Input signal, sampled on the rising edge of CLK, active LOW. When asserted, it | ||||||||||||||
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| ADV | |||||||||||||||||||||||
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| Synchronous | automatically increments the address in a burst cycle. |
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| Input- | Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When | ||||||||||||
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| ADSP | |||||||||||||||||||||||
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| Synchronous | asserted LOW, A is captured in the address registers. A1, A0 are also loaded into the burst counter. | |||||||||||
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| When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 | |||||||||
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| is deasserted HIGH. |
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| Input- | Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When | ||||||||||||
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| ADSC | |||||||||||||||||||||||
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| Synchronous | asserted LOW, A is captured in the address registers. A1, A0 are also loaded into the burst counter. | |||||||||||
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| When ADSP and ADSC are both asserted, only ADSP is recognized. |
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| ZZ | Input- | ZZ “sleep” Input, active HIGH. This input, when HIGH places the device in a | |||||||||||||||||||||
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| Asynchronous | “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or | |||||||||||
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| left floating. ZZ pin has an internal |
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| DQA, DQB | I/O- | Bidirectional Data I/O lines. As inputs, they feed into an | |||||||||||||||||||||
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| DQC, DQD | Synchronous | by the rising edge of CLK. As outputs, they deliver the data contained in the memory location | |||||||||||||||||||||
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| specified by “A” during the previous clock rise of the Read cycle. The direction of the pins is | |||||||||
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| controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQ are | |||||||||
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| placed in a |
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| VDD | Power Supply | Power supply inputs to the core of the device. |
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| VSS | Ground | Ground for the core of the device. |
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| VDDQ | I/O Power Supply | Power supply for the I/O circuitry. |
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| VSSQ | I/O Ground | Ground for the I/O circuitry. |
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| MODE | Input- | Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left | |||||||||||||||||||||
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| Static | floating selects interleaved burst sequence. This is a strap pin and should remain static during | |||||||||||
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| device operation. Mode Pin has an internal |
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| NC |
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| No Connects. Not internally connected to the die. 4M, 9M, 18M, 72M, 144M, 288M, 576M and | |||||||||||||||||||
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| 1G are address expansion pins and are not internally connected to the die. |
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Document #: |
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| Page 3 of 16 |
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