CY7C1365C
9-Mbit (256K x 32) Flow-Through Sync SRAM
Features
•256K x 32 common I/O
•3.3V core power supply (VDD)
•2.5V/3.3V I/O power supply (VDDQ)
•Fast
— 6.5 ns
•Provide
•
•Separate processor and controller address strobes
•Synchronous
•Asynchronous output enable
•Supports 3.3V I/O level
•Available in
•TQFP Available with
•“ZZ” Sleep Mode option
Selection Guide
Functional Description[1]
The CY7C1365C is a 256K x 32 synchronous cache RAM designed to interface with
6.5ns
The CY7C1365C allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input.
Addresses and Chip Enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).
The CY7C1365C operates from a +3.3V core power supply while all outputs may operate with either a +2.5 or +3.3V supply. All inputs and outputs are
| 133 MHz | 100 MHz | Unit |
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Maximum Access Time | 6.5 | 8.5 | ns |
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Maximum Operating Current | 250 | 180 | mA |
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Maximum Standby Current | 40 | 40 | mA |
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Notes:
1.For
2.CE3 is not available on 2 Chip Enable TQFP package.
Cypress Semiconductor Corporation | • | 198 Champion Court • San Jose, CA | • | |
Document #: |
| Revised September 14, 2006 |
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