Cypress CY7C1527KV18, CY7C1520KV18, CY7C1516KV18 Write Cycle Descriptions, Operation, Comments

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CY7C1516KV18, CY7C1527KV18

CY7C1518KV18, CY7C1520KV18

Truth Table

The truth table for the CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow. [2, 3, 4, 5, 6, 7]

Operation

K

LD

R/W

DQ

DQ

Write Cycle:

L-H

L

L

D(A1) at K(t + 1)

D(A2) at

 

 

K(t + 1)

Load address; wait one cycle;

 

 

 

 

 

 

 

 

 

input write data on consecutive K and

K

rising edges.

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L

H

Q(A1) at

 

 

Q(A2) at C(t + 2)

C(t + 1)

Load address; wait one and a half cycle;

 

 

 

 

 

 

 

 

 

read data on consecutive C and C rising edges.

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

X

High-Z

High-Z

 

 

 

 

 

 

Standby: Clock Stopped

Stopped

X

X

Previous State

Previous State

 

 

 

 

 

 

 

 

 

 

 

 

Burst Address Table

(CY7C1518KV18, CY7C1520KV18)

First Address (External)

Second Address (Internal)

X..X0

X..X1

 

 

X..X1

X..X0

 

 

Write Cycle Descriptions

The write cycle description table for CY7C1516KV18 and CY7C1518KV18 follows. [2, 8]

 

BWS0/

BWS1/

K

 

 

 

Comments

 

 

 

 

K

 

 

 

 

 

 

 

 

 

 

 

 

NWS0

 

NWS1

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 both nibbles (D[7:0]) are written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

L

L-H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 both nibbles (D[7:0]) are written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

H

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

L

 

H

L–H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

H

 

L

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

remains unaltered.

 

H

 

L

L–H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1516KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1518KV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

remains unaltered.

 

H

 

H

L–H

 

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

H

 

H

L–H

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected with the outputs in a tristate condition.

4.On CY7C1518KV18 and CY7C1520KV18, “A1” represents address location latched by the devices when transaction was initiated and “A2” represents the addresses sequence in the burst. On CY7C1516KV18 and CY7C1527KV18, “A1” represents A + ‘0’ and “A2” represents A + ‘1’.

5.“t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.Ensure that when the clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved.

Document Number: 001-00437 Rev. *E

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Contents Functional Description FeaturesConfigurations Cypress Semiconductor Corporation 198 Champion CourtDoff Logic Block Diagram CY7C1516KV18Logic Block Diagram CY7C1527KV18 CLKLogic Block Diagram CY7C1520KV18 Logic Block Diagram CY7C1518KV18BWS CY7C1516KV18 8M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1527KV18 8M xCY7C1518KV18 4M x CY7C1520KV18 2M xPin Name Pin Description Pin DefinitionsSynchronous Read or Write Input. When Referenced with Respect to Power supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Application ExampleProgrammable Impedance SRAM#1 ZQFirst Address External Second Address Internal Write Cycle DescriptionsOperation CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence VDD/ Vddq DoffMaximum Ratings Electrical CharacteristicsDC Electrical Characteristics Operating RangeAC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitSwitching Characteristics Parameter Min MaxParameter Min Max Output Times PLL TimingSwitching Waveforms Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History

CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

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