Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18 manual Package Diagram, Ball Fbga 13 x 15 x 1.4 mm

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CY7C1516KV18, CY7C1527KV18

CY7C1518KV18, CY7C1520KV18

Package Diagram

Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180

15.00±0.10

A

TOP VIEW

PIN 1 CORNER

1

2

3

4

5

6

7

8

9

10

11

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

1.00

15.00±0.10

14.00

 

7.00

A

BOTTOM VIEW

PIN 1 CORNER

Ø0.05 M C

Ø0.25 M C A B

-0.06

Ø0.50 (165X)

+0.14

11

10

9

8

7

6

5

4

3

2

1

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

1.00

5.00

10.00

0.25 C

 

B

0.53±0.05

 

0.36

C

 

13.00±0.10

 

 

1.40MAX.

 

 

 

 

 

 

 

 

 

0.15C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SEATING PLANE

0.35±0.06

B 13.00±0.10

0.15(4X)

NOTES :

SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)

PACKAGE WEIGHT : 0.475g

JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE CODE : BB0AC

51-85180-*A

Document Number: 001-00437 Rev. *E

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Contents Configurations FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1527KV18 Logic Block Diagram CY7C1516KV18Doff CLKBWS Logic Block Diagram CY7C1518KV18Logic Block Diagram CY7C1520KV18 Ball Fbga 13 x 15 x 1.4 mm Pinout Pin ConfigurationCY7C1516KV18 8M x CY7C1527KV18 8M xCY7C1520KV18 2M x CY7C1518KV18 4M xSynchronous Read or Write Input. When Pin DefinitionsPin Name Pin Description Power Supply Inputs for the Outputs of the Device Power supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Programmable Impedance Application ExampleEcho Clocks SRAM#1 ZQOperation Write Cycle DescriptionsFirst Address External Second Address Internal CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence Power Up Sequence in DDR-II SramPLL Constraints VDD/ Vddq DoffDC Electrical Characteristics Electrical CharacteristicsMaximum Ratings Operating RangeAC Electrical Characteristics Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max Switching CharacteristicsPLL Timing Parameter Min Max Output TimesCare Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

One of the standout features of these devices is their high-speed access times, which typically range from 12 ns to 15 ns, allowing for rapid data retrieval and writing. This speed makes them ideal for applications where low latency is crucial, such as in cache memory systems and high-speed computing. The low power consumption of these devices also makes them attractive for battery-operated equipment, as they can operate effectively while minimizing energy usage.

The CY7C1516KV18 and other models in this series incorporate advanced CMOS technology, which is instrumental in achieving low standby and active power requirements. This technology not only enhances the overall efficiency of the memory devices but also contributes to reduced thermal generation, which is an essential factor in maintaining performance and longevity in high-density applications.

Data integrity is another critical characteristic of these SRAM devices. They are designed with features such as byte-write capability and asynchronous read/write operations, ensuring that users can manage data efficiently and reliably. The robust architecture also allows for simple interfacing with most processors and microcontrollers, facilitating easy integration into various systems.

The packages of these SRAM chips are available in several form factors, including 44-pin and 48-pin configurations, allowing for flexibility in board design and layout. Their compatibility with standard interface protocols ensures seamless communication with other components of electronic designs.

These Cypress SRAM devices support a range of temperature specifications, making them suitable for both commercial and industrial-grade applications. Enhanced reliability during various operating conditions assures designers that these memory chips will maintain performance in diverse environments.

In summary, the Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 SRAM devices offer high speed, low power consumption, and flexibility in integration. With their advanced technology and robust features, these memory solutions continue to play a vital role in modern electronics, driving innovation across multiple sectors.