Cypress CY7C1518KV18, CY7C1520KV18, CY7C1516KV18, CY7C1527KV18 manual BWS0

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CY7C1516KV18, CY7C1527KV18

CY7C1518KV18, CY7C1520KV18

Write Cycle Descriptions

The write cycle description table for CY7C1527KV18 follows. [2, 8]

BWS0

K

K

 

L

L–H

–

During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.

L

–

L–H

During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.

H

L–H

–

No data is written into the device during this portion of a write operation.

 

 

 

 

H

–

L–H

No data is written into the device during this portion of a write operation.

 

 

 

 

Write Cycle Descriptions

The write cycle description table for CY7C1520KV18 follows. [2, 8]

 

BWS0

 

BWS1

 

BWS2

 

BWS3

K

 

K

Comments

 

L

 

L

 

L

 

L

L–H

 

–

During the data portion of a write sequence, all four bytes (D[35:0]) are written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device.

 

L

 

L

 

L

 

L

–

L–H

During the data portion of a write sequence, all four bytes (D[35:0]) are written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device.

 

L

 

H

 

H

 

H

L–H

 

–

During the data portion of a write sequence, only the lower byte (D[8:0]) is written

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

into the device. D[35:9] remains unaltered.

 

L

 

H

 

H

 

H

–

L–H

During the data portion of a write sequence, only the lower byte (D[8:0]) is written

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

into the device. D[35:9] remains unaltered.

 

H

 

L

 

H

 

H

L–H

 

–

During the data portion of a write sequence, only the byte (D[17:9]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[8:0] and D[35:18] remains unaltered.

 

H

 

L

 

H

 

H

–

L–H

During the data portion of a write sequence, only the byte (D[17:9]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[8:0] and D[35:18] remains unaltered.

 

H

 

H

 

L

 

H

L–H

 

–

During the data portion of a write sequence, only the byte (D[26:18]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[17:0] and D[35:27] remains unaltered.

 

H

 

H

 

L

 

H

–

L–H

During the data portion of a write sequence, only the byte (D[26:18]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[17:0] and D[35:27] remains unaltered.

 

H

 

H

 

H

 

L

L–H

 

–

During the data portion of a write sequence, only the byte (D[35:27]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[26:0] remains unaltered.

 

H

 

H

 

H

 

L

–

L–H

During the data portion of a write sequence, only the byte (D[35:27]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[26:0] remains unaltered.

 

H

 

H

 

H

 

H

L–H

 

–

No data is written into the device during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

H

 

H

 

H

 

H

–

L–H

No data is written into the device during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 001-00437 Rev. *E

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesConfigurations Functional DescriptionCLK Logic Block Diagram CY7C1516KV18Logic Block Diagram CY7C1527KV18 DoffBWS Logic Block Diagram CY7C1518KV18Logic Block Diagram CY7C1520KV18 CY7C1527KV18 8M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1516KV18 8M xCY7C1520KV18 2M x CY7C1518KV18 4M xSynchronous Read or Write Input. When Pin DefinitionsPin Name Pin Description TDO for Jtag Power supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview SRAM#1 ZQ Application ExampleProgrammable Impedance Echo ClocksComments Write Cycle DescriptionsOperation First Address External Second Address InternalBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderVDD/ Vddq Doff Power Up Sequence in DDR-II SramPower Up Sequence PLL ConstraintsOperating Range Electrical CharacteristicsDC Electrical Characteristics Maximum RatingsAC Electrical Characteristics Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitParameter Min Max Switching CharacteristicsPLL Timing Parameter Min Max Output TimesCare Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

One of the standout features of these devices is their high-speed access times, which typically range from 12 ns to 15 ns, allowing for rapid data retrieval and writing. This speed makes them ideal for applications where low latency is crucial, such as in cache memory systems and high-speed computing. The low power consumption of these devices also makes them attractive for battery-operated equipment, as they can operate effectively while minimizing energy usage.

The CY7C1516KV18 and other models in this series incorporate advanced CMOS technology, which is instrumental in achieving low standby and active power requirements. This technology not only enhances the overall efficiency of the memory devices but also contributes to reduced thermal generation, which is an essential factor in maintaining performance and longevity in high-density applications.

Data integrity is another critical characteristic of these SRAM devices. They are designed with features such as byte-write capability and asynchronous read/write operations, ensuring that users can manage data efficiently and reliably. The robust architecture also allows for simple interfacing with most processors and microcontrollers, facilitating easy integration into various systems.

The packages of these SRAM chips are available in several form factors, including 44-pin and 48-pin configurations, allowing for flexibility in board design and layout. Their compatibility with standard interface protocols ensures seamless communication with other components of electronic designs.

These Cypress SRAM devices support a range of temperature specifications, making them suitable for both commercial and industrial-grade applications. Enhanced reliability during various operating conditions assures designers that these memory chips will maintain performance in diverse environments.

In summary, the Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 SRAM devices offer high speed, low power consumption, and flexibility in integration. With their advanced technology and robust features, these memory solutions continue to play a vital role in modern electronics, driving innovation across multiple sectors.
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