Cypress CY7C1520KV18, CY7C1516KV18, CY7C1527KV18, CY7C1518KV18 manual 167

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CY7C1516KV18, CY7C1527KV18

CY7C1518KV18, CY7C1520KV18

Table 2.	Ordering Information (continued)

Speed	Ordering Code	Package	Package Type	Operating
(MHz)	Ordering Code	Diagram	Package Type	Range
167	CY7C1516KV18-167BZC	51-85180	165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)	Commercial

	CY7C1527KV18-167BZC

	CY7C1518KV18-167BZC

	CY7C1520KV18-167BZC

	CY7C1516KV18-167BZXC	51-85180	165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free

	CY7C1527KV18-167BZXC

	CY7C1518KV18-167BZXC

	CY7C1520KV18-167BZXC

	CY7C1516KV18-167BZI	51-85180	165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)	Industrial

	CY7C1527KV18-167BZI

	CY7C1518KV18-167BZI

	CY7C1520KV18-167BZI

	CY7C1516KV18-167BZXI	51-85180	165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free

	CY7C1527KV18-167BZXI

	CY7C1518KV18-167BZXI

	CY7C1520KV18-167BZXI

Document Number: 001-00437 Rev. *E

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Contents Features ConfigurationsFunctional Description Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1516KV18 Logic Block Diagram CY7C1527KV18Doff CLKLogic Block Diagram CY7C1520KV18 Logic Block Diagram CY7C1518KV18BWS Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutCY7C1516KV18 8M x CY7C1527KV18 8M xCY7C1518KV18 4M x CY7C1520KV18 2M xPin Name Pin Description Pin DefinitionsSynchronous Read or Write Input. When Power supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Application Example Programmable ImpedanceEcho Clocks SRAM#1 ZQWrite Cycle Descriptions OperationFirst Address External Second Address Internal CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequencePLL Constraints VDD/ Vddq DoffElectrical Characteristics DC Electrical CharacteristicsMaximum Ratings Operating RangeAC Electrical Characteristics Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitSwitching Characteristics Parameter Min MaxParameter Min Max Output Times PLL TimingSwitching Waveforms Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History

CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

One of the standout features of these devices is their high-speed access times, which typically range from 12 ns to 15 ns, allowing for rapid data retrieval and writing. This speed makes them ideal for applications where low latency is crucial, such as in cache memory systems and high-speed computing. The low power consumption of these devices also makes them attractive for battery-operated equipment, as they can operate effectively while minimizing energy usage.

The CY7C1516KV18 and other models in this series incorporate advanced CMOS technology, which is instrumental in achieving low standby and active power requirements. This technology not only enhances the overall efficiency of the memory devices but also contributes to reduced thermal generation, which is an essential factor in maintaining performance and longevity in high-density applications.

Data integrity is another critical characteristic of these SRAM devices. They are designed with features such as byte-write capability and asynchronous read/write operations, ensuring that users can manage data efficiently and reliably. The robust architecture also allows for simple interfacing with most processors and microcontrollers, facilitating easy integration into various systems.

The packages of these SRAM chips are available in several form factors, including 44-pin and 48-pin configurations, allowing for flexibility in board design and layout. Their compatibility with standard interface protocols ensures seamless communication with other components of electronic designs.

These Cypress SRAM devices support a range of temperature specifications, making them suitable for both commercial and industrial-grade applications. Enhanced reliability during various operating conditions assures designers that these memory chips will maintain performance in diverse environments.

In summary, the Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 SRAM devices offer high speed, low power consumption, and flexibility in integration. With their advanced technology and robust features, these memory solutions continue to play a vital role in modern electronics, driving innovation across multiple sectors.