Cypress CY7C1527KV18, CY7C1520KV18, CY7C1516KV18, CY7C1518KV18 manual Capacitance, Thermal Resistance

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CY7C1516KV18, CY7C1527KV18

CY7C1518KV18, CY7C1520KV18

Capacitance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V

2

pF

CO

Output Capacitance

 

3

pF

Thermal Resistance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

 

Test Conditions

165 FBGA

Unit

 

Package

 

 

 

 

 

ΘJA

Thermal Resistance

 

Test conditions follow standard test methods and

13.7

°C/W

 

(Junction to Ambient)

 

procedures for measuring thermal impedance, in

 

 

 

 

 

accordance with EIA/JESD51.

 

 

ΘJC

Thermal Resistance

 

3.73

°C/W

 

 

 

(Junction to Case)

 

 

 

 

 

 

Figure 4. AC Test Loads and Waveforms

 

 

VREF = 0.75V

VREF

 

 

 

 

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

Z0 = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

Under

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

 

 

 

 

 

 

 

 

 

 

ZQ

RQ =

250Ω

(a)

RL = 50Ω

VREF = 0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VREF

 

 

 

 

 

 

0.75V

 

 

 

 

 

R = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES[20]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF 0.25V

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Under

ZQ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Slew Rate = 2 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

 

 

 

RQ =

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

250Ω

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note

20.Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads and Waveforms.

Document Number: 001-00437 Rev. *E

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Contents Functional Description FeaturesConfigurations Cypress Semiconductor Corporation 198 Champion CourtDoff Logic Block Diagram CY7C1516KV18Logic Block Diagram CY7C1527KV18 CLKLogic Block Diagram CY7C1520KV18 Logic Block Diagram CY7C1518KV18BWS CY7C1516KV18 8M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1527KV18 8M xCY7C1518KV18 4M x CY7C1520KV18 2M xPin Name Pin Description Pin DefinitionsSynchronous Read or Write Input. When Referenced with Respect to Power supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Application ExampleProgrammable Impedance SRAM#1 ZQFirst Address External Second Address Internal Write Cycle DescriptionsOperation CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence VDD/ Vddq DoffMaximum Ratings Electrical CharacteristicsDC Electrical Characteristics Operating RangeAC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitSwitching Characteristics Parameter Min MaxParameter Min Max Output Times PLL TimingSwitching Waveforms Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History

CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, CY7C1518KV18 specifications

The Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 are a series of high-performance asynchronous static random-access memory (SRAM) devices designed for a variety of applications requiring fast data access and reliable operation. These SRAM chips feature density options ranging from 1Mbit to 4Mbit, catering to a broad spectrum of consumer electronics, telecommunications, networking, and industrial applications.

One of the standout features of these devices is their high-speed access times, which typically range from 12 ns to 15 ns, allowing for rapid data retrieval and writing. This speed makes them ideal for applications where low latency is crucial, such as in cache memory systems and high-speed computing. The low power consumption of these devices also makes them attractive for battery-operated equipment, as they can operate effectively while minimizing energy usage.

The CY7C1516KV18 and other models in this series incorporate advanced CMOS technology, which is instrumental in achieving low standby and active power requirements. This technology not only enhances the overall efficiency of the memory devices but also contributes to reduced thermal generation, which is an essential factor in maintaining performance and longevity in high-density applications.

Data integrity is another critical characteristic of these SRAM devices. They are designed with features such as byte-write capability and asynchronous read/write operations, ensuring that users can manage data efficiently and reliably. The robust architecture also allows for simple interfacing with most processors and microcontrollers, facilitating easy integration into various systems.

The packages of these SRAM chips are available in several form factors, including 44-pin and 48-pin configurations, allowing for flexibility in board design and layout. Their compatibility with standard interface protocols ensures seamless communication with other components of electronic designs.

These Cypress SRAM devices support a range of temperature specifications, making them suitable for both commercial and industrial-grade applications. Enhanced reliability during various operating conditions assures designers that these memory chips will maintain performance in diverse environments.

In summary, the Cypress CY7C1516KV18, CY7C1520KV18, CY7C1527KV18, and CY7C1518KV18 SRAM devices offer high speed, low power consumption, and flexibility in integration. With their advanced technology and robust features, these memory solutions continue to play a vital role in modern electronics, driving innovation across multiple sectors.
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