Cypress CY7C144, CY7C145 manual Maximum Ratings, Operating Range

Page 4

CY7C145, CY7C144

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.[5]

Storage Temperature

65°C to +150°C

Output Current into Outputs (LOW)

............................. 20 mA

Static Discharge Voltage

>2001V

(per MIL-STD-883, Method 3015)

 

Latch-Up Current

>200 mA

Ambient Temperature with

 

 

 

 

 

 

 

 

Operating Range

 

 

 

 

 

Power Applied.................................................. −55°C to +125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Ambient

 

 

 

 

 

Supply Voltage to Ground Potential .................−0.5V to +7.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Range

 

Temperature

 

VCC

 

 

DC Voltage Applied to Outputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Commercial

 

0°C to +70°C

 

5V ± 10%

 

in High Z State .....................................................−0.5V to +7.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Industrial

40°C to +85°C

5V ± 10%

 

DC Input Voltage[6]..............................................−0.5V to +7.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics Over the Operating Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7C144-15

 

7C144-25

 

 

 

Parameter

Description

 

 

 

 

 

 

Test Conditions

 

 

7C145-15

 

7C145-25

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

 

Max

 

Min

Max

 

 

 

VOH

Output HIGH Voltage

 

VCC = Min., IOH = 4.0 mA

 

 

2.4

 

 

 

2.4

 

 

V

 

VOL

Output LOW Voltage

 

VCC = Min., IOL = 4.0 mA

 

 

 

 

0.4

 

 

0.4

 

V

 

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

 

2.2

 

 

 

2.2

 

 

V

 

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.8

 

 

0.8

 

V

 

IIX

Input Leakage Current

GND < VI < VCC

 

 

 

 

 

10

 

+10

 

10

+10

 

μA

 

IOZ

Output Leakage Current

 

Outputs Disabled, GND < VO < VCC

 

10

 

+10

 

10

+10

 

μA

 

ICC

Operating Current

VCC = Max., IOUT = 0 mA

 

Commercial

 

 

 

220

 

 

180

 

mA

 

 

 

 

Outputs Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Industrial

 

 

 

 

 

 

190

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

Standby Current

 

 

L and

 

 

R > VIH,

 

Commercial

 

 

 

60

 

 

40

 

mA

 

 

CE

CE

 

 

 

 

 

 

(Both Ports TTL Levels)

 

f = fMAX[7]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Industrial

 

 

 

 

 

 

50

 

 

 

ISB2

Standby Current

 

 

L or

 

 

R > VIH,

 

 

 

Commercial

 

 

 

130

 

 

110

 

mA

 

 

CE

CE

 

 

 

 

 

 

 

 

 

(One Port TTL Level)

 

f = fMAX[7]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Industrial

 

 

 

 

 

 

120

 

 

 

ISB3

Standby Current

 

Both Ports

 

 

 

Commercial

 

 

 

15

 

 

15

 

mA

 

 

(Both Ports CMOS Levels)

 

CE and CER > VCC – 0.2V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Industrial

 

 

 

 

 

 

30

 

 

 

 

 

 

VIN > VCC – 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

or VIN < 0.2V, f = 0[7]

 

 

 

 

 

 

 

 

 

 

 

 

ISB4

Standby Current

 

One Port

 

 

 

 

Commercial

 

 

 

125

 

 

100

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(One Port CMOS Level)

 

CEL or CER > VCC

– 0.2V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Industrial

 

 

 

 

 

 

115

 

 

 

 

 

 

VIN > VCC – 0.2V or

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN < 0.2V, Active

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Port Outputs, f = fMAX[7]

 

 

 

 

 

 

 

 

 

 

 

 

Notes

5.The Voltage on any input or I/O pin cannot exceed the power pin during power-up.

6.Pulse width < 20 ns.

7.fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3.

Document #: 38-06034 Rev. *D

Page 4 of 21

[+] Feedback

Image 4
Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Configurations Pin Plcc Top ViewSelection Guide Description Pin Definitions Left Port Right Port DescriptionUnit Maximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Capacitance Parameter Description Test Conditions Max UnitSwitching Characteristics Over the Operating Range9 Switching Characteristics Over the Operating Range 7C144-157C144-35 7C144-55 Parameter Description 7C145-15 7C145-35 7C145-55 Unit MinSwitching Waveforms Read Cycle No Either Port Address Access15CY7C145, CY7C144 Semaphore Read After Write Timing, Either Side25 Read with Busy M/S=HIGH20 CER Valid First Right Address Valid FirstLeft Side Sets INT R Right Side Clears INT RRight Side Sets INT L Left Side Clears IntlArchitecture Non-Contending Read/Write Inputs Outputs OperationInterrupt Operation Example assumes = High Function Left Port Right PortTypical DC and AC Characteristics Ordering Information 8K x8 Dual-Port SramPin Plastic Leaded Chip Carrier CY7C144-15JXC Pin Plastic Leaded Chip Carrier CY7C144-55JXC8K x9 Dual-Port Sram Pin Plastic Leaded Chip Carrier CY7C145-35JXCPackage Diagrams Pin Thin Plastic Quad Flat Pack 14 x 14 x 1.4 mm A65Pin Thin Plastic Quad Flat Pack A80 Worldwide Sales and Design Support Products PSoC Solutions Sales, Solutions and Legal InformationDocument History

CY7C145, CY7C144 specifications

Cypress Semiconductor is renowned for its advanced memory solutions, and two of its noteworthy products are the CY7C144 and CY7C145, both of which serve as emerging leaders in the field of synchronous dynamic random-access memory (SDRAM). These memory chips provide high-speed data access, making them ideal for various applications, including networking, automotive, and industrial electronics.

The CY7C144 is a 4-Mbit SRAM, while its counterpart, the CY7C145, is an 8-Mbit SRAM. Both chips utilize a synchronous interface, which allows them to operate at clock rates that significantly enhance data retrieval speeds. Designed for low power consumption, these devices feature several power-saving modes, making them suitable for battery-operated applications.

One of the main features of the CY7C144 and CY7C145 is their support for burst read and write operations. This function enables the memory to deliver multiple bits of data sequentially with a single command, substantially increasing throughput. Additionally, both models come with a wide data bus, typically 16 bits, allowing for efficient data handling and alignment with a variety of systems.

The technology behind these chips includes static CMOS processes, which promote high performance and reliability under various operating environments. The CY7C144 and CY7C145 both guarantee a high level of data integrity, thanks to advanced error detection and correction features. This makes them especially valuable in applications where data accuracy is critical.

Another critical aspect is the integration of an on-chip address decoder for efficient memory addressing, minimizing delays during data access. This characteristic plays a crucial role in optimizing the overall system performance, particularly in high-bandwidth applications.

In terms of environmental resilience, these memories are designed to withstand a range of temperatures, making them robust enough for industrial applications. The CY7C144 and CY7C145 also comply with several industry standards, ensuring compatibility with a wide array of devices and systems.

In summary, the CY7C144 and CY7C145 by Cypress Semiconductor stand out due to their blend of high speed, low power consumption, and robust reliability. With advanced features like burst read/write capabilities, error detection, and temperature resilience, these memory chips are exceptional choices for modern electronic applications demanding speed and efficiency. Their continued evolution reflects Cypress's commitment to innovation in the semiconductor industry, catering to the growing needs of a data-driven world.