Cypress CY7C145, CY7C144 manual Switching Characteristics Over the Operating Range, 7C144-15

Page 7

CY7C145, CY7C144

Switching Characteristics Over the Operating Range[9]

(continued)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7C144-15

 

7C144-25

7C144-35

7C144-55

 

Parameter

 

 

 

 

 

 

Description

7C145-15

 

7C145-25

7C145-35

7C145-55

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

Max

 

Min

Max

Min

Max

Min

Max

 

tSD

 

Data Set-Up to Write End

10

 

 

15

 

15

 

25

 

ns

tHD

 

Data Hold From Write End

0

 

 

0

 

0

 

0

 

ns

tHZWE[11,12]

 

R/W

LOW to High Z

 

10

 

 

15

 

20

 

25

ns

tLZWE[11,12]

 

R/W

HIGH to Low Z

3

 

 

3

 

3

 

3

 

ns

tWDD[13]

 

Write Pulse to Data Delay

 

30

 

 

50

 

60

 

70

ns

tDDD[13]

 

Write Data Valid to Read Data

 

25

 

 

30

 

35

 

40

ns

 

 

Valid

 

 

 

 

 

 

 

 

 

 

BUSY TIMING[14]

 

 

 

 

 

 

 

 

 

 

tBLA

 

BUSY

 

LOW from Address

 

15

 

 

20

 

20

 

30

ns

 

 

Match

 

 

 

 

 

 

 

 

 

 

tBHA

 

BUSY

 

HIGH from Address

 

15

 

 

20

 

20

 

30

ns

 

 

Mismatch

 

 

 

 

 

 

 

 

 

 

tBLC

 

BUSY

LOW from

CE

 

LOW

 

15

 

 

20

 

20

 

30

ns

tBHC

 

BUSY

HIGH from

CE

HIGH

 

15

 

 

20

 

20

 

30

ns

tPS

 

Port Set-Up for Priority

5

 

 

5

 

5

 

5

 

ns

tWB

 

R/W

LOW after BUSY LOW

0

 

 

0

 

0

 

0

 

ns

tWH

 

R/W

HIGH after BUSY HIGH

13

 

 

20

 

30

 

30

 

ns

tBDD

 

BUSY

HIGH to Data Valid

 

15

 

 

25

 

35

 

55

ns

INTERRUPT TIMING[14]

 

 

 

 

 

 

 

 

 

 

tINS

 

INT

Set Time

 

15

 

 

25

 

25

 

35

ns

tINR

 

INT

Reset Time

 

15

 

 

25

 

25

 

35

ns

SEMAPHORE

TIMING

 

 

 

 

 

 

 

 

 

 

tSOP

 

SEM Flag Update Pulse

(OE

 

10

 

 

10

 

15

 

20

 

ns

 

 

or SEM)

 

 

 

 

 

 

 

 

 

 

tSWRD

 

SEM Flag Write to Read Time

5

 

 

5

 

5

 

5

 

ns

tSPS

 

SEM Flag Contention

5

 

 

5

 

5

 

5

 

ns

 

 

Window

 

 

 

 

 

 

 

 

 

 

Notes

13.For information on part-to-part delay through RAM cells from writing port to reading port, refer to Read Timing with Port-to-Port Delay waveform.

14.Test conditions used are Load 2.

Document #: 38-06034 Rev. *D

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesLogic Block Diagram Functional DescriptionPin Plcc Top View Pin ConfigurationsSelection Guide Description Pin Definitions Left Port Right Port DescriptionUnit Maximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Parameter Description Test Conditions Max Unit CapacitanceSwitching Characteristics Over the Operating Range9 7C145-35 7C145-55 Unit Min Switching Characteristics Over the Operating Range7C144-15 7C144-35 7C144-55 Parameter Description 7C145-15Read Cycle No Either Port Address Access15 Switching WaveformsCY7C145, CY7C144 Semaphore Read After Write Timing, Either Side25 Read with Busy M/S=HIGH20 Right Address Valid First CER Valid FirstLeft Side Clears Intl Left Side Sets INT RRight Side Clears INT R Right Side Sets INT LArchitecture Function Left Port Right Port Non-Contending Read/Write Inputs OutputsOperation Interrupt Operation Example assumes = HighTypical DC and AC Characteristics Pin Plastic Leaded Chip Carrier CY7C144-55JXC Ordering Information8K x8 Dual-Port Sram Pin Plastic Leaded Chip Carrier CY7C144-15JXCPin Plastic Leaded Chip Carrier CY7C145-35JXC 8K x9 Dual-Port SramPin Thin Plastic Quad Flat Pack 14 x 14 x 1.4 mm A65 Package DiagramsPin Thin Plastic Quad Flat Pack A80 Worldwide Sales and Design Support Products PSoC Solutions Sales, Solutions and Legal InformationDocument History

CY7C145, CY7C144 specifications

Cypress Semiconductor is renowned for its advanced memory solutions, and two of its noteworthy products are the CY7C144 and CY7C145, both of which serve as emerging leaders in the field of synchronous dynamic random-access memory (SDRAM). These memory chips provide high-speed data access, making them ideal for various applications, including networking, automotive, and industrial electronics.

The CY7C144 is a 4-Mbit SRAM, while its counterpart, the CY7C145, is an 8-Mbit SRAM. Both chips utilize a synchronous interface, which allows them to operate at clock rates that significantly enhance data retrieval speeds. Designed for low power consumption, these devices feature several power-saving modes, making them suitable for battery-operated applications.

One of the main features of the CY7C144 and CY7C145 is their support for burst read and write operations. This function enables the memory to deliver multiple bits of data sequentially with a single command, substantially increasing throughput. Additionally, both models come with a wide data bus, typically 16 bits, allowing for efficient data handling and alignment with a variety of systems.

The technology behind these chips includes static CMOS processes, which promote high performance and reliability under various operating environments. The CY7C144 and CY7C145 both guarantee a high level of data integrity, thanks to advanced error detection and correction features. This makes them especially valuable in applications where data accuracy is critical.

Another critical aspect is the integration of an on-chip address decoder for efficient memory addressing, minimizing delays during data access. This characteristic plays a crucial role in optimizing the overall system performance, particularly in high-bandwidth applications.

In terms of environmental resilience, these memories are designed to withstand a range of temperatures, making them robust enough for industrial applications. The CY7C144 and CY7C145 also comply with several industry standards, ensuring compatibility with a wide array of devices and systems.

In summary, the CY7C144 and CY7C145 by Cypress Semiconductor stand out due to their blend of high speed, low power consumption, and robust reliability. With advanced features like burst read/write capabilities, error detection, and temperature resilience, these memory chips are exceptional choices for modern electronic applications demanding speed and efficiency. Their continued evolution reflects Cypress's commitment to innovation in the semiconductor industry, catering to the growing needs of a data-driven world.