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| CY7C145, CY7C144 |
Switching Waveforms (continued) |
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| Figure 8. Write Cycle No. 1: OE | ||
| tWC |
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ADDRESS |
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SEM OR CE | tSCE |
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| tAW |
| tHA |
R/W | tPWE |
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| tSA | tSD | tHD |
DATA IN |
| DATA VALID |
|
OE |
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| tHZOE |
| tLZOE |
DATA OUT | HIGH IMPEDANCE |
| |
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| Figure 9. Write Cycle No. 2: R/W | ||
| tWC |
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ADDRESS |
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| tSCE |
| tHA |
SEM OR CE |
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| tAW | t |
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| tSA |
| |
R/W |
| PWE |
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| |
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| tSD | tHD |
DATA IN |
| DATAVALID |
|
| t |
| tLZWE |
| HZWE |
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DATA OUT |
| HIGH IMPEDANCE | |
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Notes
21.The internal write time of the memory is defined by the overlap of CE or SEM LOW and R/W LOW. Both signals must be LOW to initiate a write, and either signal can terminate a write by going HIGH. The data input
22.If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on the bus for the required tSD. If OE is HIGH during a R/W controlled write cycle (as in this example), this requirement does not apply and the write pulse can be as short as the specified tPWE.
23.R/W must be HIGH during all address transitions.
24.Data I/O pins enter high impedance when OE is held LOW during write.
Document #: | Page 9 of 21 |
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