Cypress manual CY7C145, CY7C144

Page 9

 

 

 

CY7C145, CY7C144

Switching Waveforms (continued)

 

 

 

Figure 8. Write Cycle No. 1: OE Three-State Data I/Os (Either Port)[21, 22, 23]

 

tWC

 

 

ADDRESS

 

 

 

SEM OR CE

tSCE

 

 

 

 

 

 

tAW

 

tHA

R/W

tPWE

 

 

 

 

 

 

tSA

tSD

tHD

DATA IN

 

DATA VALID

 

OE

 

 

 

 

tHZOE

 

tLZOE

DATA OUT

HIGH IMPEDANCE

 

 

 

 

 

Figure 9. Write Cycle No. 2: R/W Three-State Data I/Os (Either Port)[21, 23, 24]

 

tWC

 

 

ADDRESS

 

 

 

 

tSCE

 

tHA

SEM OR CE

 

 

 

 

tAW

t

 

 

tSA

 

R/W

 

PWE

 

 

 

 

 

 

tSD

tHD

DATA IN

 

DATAVALID

 

 

t

 

tLZWE

 

HZWE

 

 

DATA OUT

 

HIGH IMPEDANCE

 

 

 

Notes

21.The internal write time of the memory is defined by the overlap of CE or SEM LOW and R/W LOW. Both signals must be LOW to initiate a write, and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.

22.If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on the bus for the required tSD. If OE is HIGH during a R/W controlled write cycle (as in this example), this requirement does not apply and the write pulse can be as short as the specified tPWE.

23.R/W must be HIGH during all address transitions.

24.Data I/O pins enter high impedance when OE is held LOW during write.

Document #: 38-06034 Rev. *D

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Image 9 Contents
Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Plcc Top View Pin ConfigurationsPin Definitions Left Port Right Port Description Selection Guide DescriptionUnit Electrical Characteristics Over the Operating Range Maximum RatingsOperating Range Parameter Description Test Conditions Max Unit CapacitanceSwitching Characteristics Over the Operating Range9 7C144-15 Switching Characteristics Over the Operating Range7C144-35 7C144-55 Parameter Description 7C145-15 7C145-35 7C145-55 Unit MinRead Cycle No Either Port Address Access15 Switching WaveformsCY7C145, CY7C144 Semaphore Read After Write Timing, Either Side25 Read with Busy M/S=HIGH20 Right Address Valid First CER Valid FirstRight Side Clears INT R Left Side Sets INT RRight Side Sets INT L Left Side Clears IntlArchitecture Operation Non-Contending Read/Write Inputs OutputsInterrupt Operation Example assumes = High Function Left Port Right PortTypical DC and AC Characteristics 8K x8 Dual-Port Sram Ordering InformationPin Plastic Leaded Chip Carrier CY7C144-15JXC Pin Plastic Leaded Chip Carrier CY7C144-55JXCPin Plastic Leaded Chip Carrier CY7C145-35JXC 8K x9 Dual-Port SramPin Thin Plastic Quad Flat Pack 14 x 14 x 1.4 mm A65 Package DiagramsPin Thin Plastic Quad Flat Pack A80 Sales, Solutions and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsDocument History