Cypress CY7C144, CY7C145 manual Switching Waveforms, Read Cycle No Either Port Address Access15

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CY7C145, CY7C144

Switching Waveforms

Figure 5. Read Cycle No. 1 (Either Port Address Access)[15, 16]

tRC

ADDRESS

tAA

tOHA

DATA OUT PREVIOUS DATA VALID

DATA VALID

	Figure 6. Read Cycle No. 2 (Either Port CE/OE Access)[15, 17, 18]
SEM or CE
OE	tACE		tHZCE
OE
		tDOE	tHZOE
	tLZOE	tDOE
	tLZCE
DATA OUT		DATA VALID
	tPU		t
ICC			PD
ICC
ISB
	Figure 7. Read Timing with Port-to-Port Delay (M/S=L)[19, 20]
		tWC
ADDRESSR		MATCH
R/WR		tPWE
		tSD	tHD
DATAINR		VALID
ADDRESSL		MATCH
			tDDD
DATAOUTL			VALID
		tWDD

Notes

15.R/W is HIGH for read cycle.

16.Device is continuously selected CE = LOW and OE = LOW. This waveform cannot be used for semaphore reads.

17.Address valid prior to or coincident with CE transition LOW.

18.CEL = L, SEM = H when accessing RAM. CE = H, SEM = L when accessing semaphores.

19.BUSY = HIGH for the writing port.

20.CEL = CER = LOW.

Document #: 38-06034 Rev. *D

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Configurations Pin Plcc Top ViewUnit Pin Definitions Left Port Right Port DescriptionSelection Guide Description Operating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Capacitance Parameter Description Test Conditions Max UnitSwitching Characteristics Over the Operating Range9 Switching Characteristics Over the Operating Range 7C144-157C144-35 7C144-55 Parameter Description 7C145-15 7C145-35 7C145-55 Unit MinSwitching Waveforms Read Cycle No Either Port Address Access15CY7C145, CY7C144 Semaphore Read After Write Timing, Either Side25 Read with Busy M/S=HIGH20 CER Valid First Right Address Valid FirstLeft Side Sets INT R Right Side Clears INT RRight Side Sets INT L Left Side Clears IntlArchitecture Non-Contending Read/Write Inputs Outputs OperationInterrupt Operation Example assumes = High Function Left Port Right PortTypical DC and AC Characteristics Ordering Information 8K x8 Dual-Port SramPin Plastic Leaded Chip Carrier CY7C144-15JXC Pin Plastic Leaded Chip Carrier CY7C144-55JXC8K x9 Dual-Port Sram Pin Plastic Leaded Chip Carrier CY7C145-35JXCPackage Diagrams Pin Thin Plastic Quad Flat Pack 14 x 14 x 1.4 mm A65Pin Thin Plastic Quad Flat Pack A80 Document History Sales, Solutions and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C145, CY7C144 specifications

Cypress Semiconductor is renowned for its advanced memory solutions, and two of its noteworthy products are the CY7C144 and CY7C145, both of which serve as emerging leaders in the field of synchronous dynamic random-access memory (SDRAM). These memory chips provide high-speed data access, making them ideal for various applications, including networking, automotive, and industrial electronics.

The CY7C144 is a 4-Mbit SRAM, while its counterpart, the CY7C145, is an 8-Mbit SRAM. Both chips utilize a synchronous interface, which allows them to operate at clock rates that significantly enhance data retrieval speeds. Designed for low power consumption, these devices feature several power-saving modes, making them suitable for battery-operated applications.

One of the main features of the CY7C144 and CY7C145 is their support for burst read and write operations. This function enables the memory to deliver multiple bits of data sequentially with a single command, substantially increasing throughput. Additionally, both models come with a wide data bus, typically 16 bits, allowing for efficient data handling and alignment with a variety of systems.

The technology behind these chips includes static CMOS processes, which promote high performance and reliability under various operating environments. The CY7C144 and CY7C145 both guarantee a high level of data integrity, thanks to advanced error detection and correction features. This makes them especially valuable in applications where data accuracy is critical.

Another critical aspect is the integration of an on-chip address decoder for efficient memory addressing, minimizing delays during data access. This characteristic plays a crucial role in optimizing the overall system performance, particularly in high-bandwidth applications.

In terms of environmental resilience, these memories are designed to withstand a range of temperatures, making them robust enough for industrial applications. The CY7C144 and CY7C145 also comply with several industry standards, ensuring compatibility with a wide array of devices and systems.

In summary, the CY7C144 and CY7C145 by Cypress Semiconductor stand out due to their blend of high speed, low power consumption, and robust reliability. With advanced features like burst read/write capabilities, error detection, and temperature resilience, these memory chips are exceptional choices for modern electronic applications demanding speed and efficiency. Their continued evolution reflects Cypress's commitment to innovation in the semiconductor industry, catering to the growing needs of a data-driven world.

Switching Waveforms

Figure 5. Read Cycle No. 1 (Either Port Address Access)[15, 16]

Figure 6. Read Cycle No. 2 (Either Port CE/OE Access)[15, 17, 18]

Figure 7. Read Timing with Port-to-Port Delay (M/S=L)[19, 20]

CY7C145, CY7C144 specifications