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| CY7C1338G | |
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Pin Configurations (continued) |
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| 1 | 2 | 3 |
| 4 |
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| 5 |
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| A | VDDQ | A |
| A |
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| A | A | VDDQ |
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| ADSP |
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| B | NC/288M | CE2 |
| A |
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| A | NC/9M | NC/576M |
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| ADSC |
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| C | NC/144M | A |
| A |
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| VDD |
| A | A | NC/1G |
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| D | DQC | NC |
| VSS |
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| NC |
| VSS | NC | DQB |
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| E | DQC | DQC |
| VSS |
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| VSS | DQB | DQB |
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| CE |
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| F | VDDQ | DQC |
| VSS |
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| VSS | DQB | VDDQ |
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| OE |
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| G | DQC | DQC |
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| B | DQB | DQB |
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| H | DQC | DQC |
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| VSS | DQB | DQB |
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| J | VDDQ | VDD |
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| K | DQD | DQD |
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| CLK |
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| L | DQD | DQD |
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| M | VDDQ | DQD |
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| N | DQD | DQD |
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| P | DQD | NC |
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| R | NC | A | MODE |
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| NC | A | NC |
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| T | NC | NC/72M |
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| U | VDDQ | NC |
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| NC | NC | VDDQ |
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Pin Definitions
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| Name | I/O |
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| A0, A1, A | Input- | Address Inputs used to select one of the 128K address locations. Sampled at the rising edge | ||||||||||||
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| Synchronous | of the CLK if ADSP or | ADSC | is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed | ||
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| B | Input- | Byte Write Select Inputs, active LOW. Qualified with |
| to conduct byte writes to the SRAM. | |||||
| BW | BW | BWE | ||||||||||||
| BWC, BWD | Synchronous | Sampled on the rising edge of CLK. | ||||||||||||
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| Input- | Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global | ||||||
| GW | ||||||||||||||
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| Synchronous | write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and BWE). | ||||
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| Input- | Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be | ||||||
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| Synchronous | asserted LOW to conduct a byte write. | ||||
| CLK | Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst | |||||||||||||
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| counter when ADV is asserted LOW, during a burst operation. | ||||
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| 1 |
| Input- | Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||
| CE | ||||||||||||||
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| Synchronous | CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only | ||||
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| when a new external address is loaded. | ||||
| CE2 | Input- | Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||||
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| Synchronous | CE1 and CE3 to select/deselect the device. CE2 is sampled only when a new external address is | ||||
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| loaded. | ||||
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| 3 |
| Input- | Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||
| CE | ||||||||||||||
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| Synchronous | CE1 and CE2 to select/deselect the device. CE3 is sampled only when a new external address is | ||||
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| loaded. | ||||
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| Input- | Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When | |||||||||
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| Asynchronous | LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are | ||||
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| input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected | ||||
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| state. | ||||
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| Input- | Advance Input signal, sampled on the rising edge of CLK. When asserted, it automatically | |||||||
| ADV | ||||||||||||||
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| Synchronous | increments the address in a burst cycle. |
Document #: | Page 3 of 17 |