Cypress CY62147DV30 manual Maximum Ratings, Electrical Characteristics Over the Operating Range

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CY62147DV30

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground

 

 

Potential

–0.3V to + VCC(MAX) + 0.3V

DC Voltage Applied to Outputs

 

 

in High-Z State[6,7]

–0.3V to V

+ 0.3V

DC Input Voltage[6,7]

CC(MAX)

 

–0.3V to V

+ 0.3V

 

CC(MAX)

 

Electrical Characteristics (Over the Operating Range)

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

 

>2001V

(per MIL-STD-883, Method 3015)

 

 

Latch-up Current

 

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

Ambient

 

 

 

Temperature

 

Device

Range

[TA][9]

VCC

CY62147DV30L

Automotive-E

–40°C to +125°C

2.20V

 

 

 

to

CY62147DV30LL

Industrial

–40°C to +85°C

3.60V

 

 

 

 

Automotive-A

–40°C to +85°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–45

 

 

–55/–70

 

Parameter

Description

 

 

 

 

 

 

Test Conditions

 

 

 

 

 

 

 

Unit

 

 

 

 

 

 

 

Min.

Typ.[5]

Max.

Min.

Typ.[5]

Max.

VOH

Output HIGH

 

 

IOH = –0.1 mA

VCC = 2.20V

2.0

 

 

2.0

 

 

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOH = –1.0 mA

VCC = 2.70V

2.4

 

 

2.4

 

 

V

 

 

 

 

 

 

 

 

 

VOL

Output LOW

 

 

IOL = 0.1 mA

VCC = 2.20V

 

 

0.4

 

 

0.4

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOL = 2.1 mA

VCC = 2.70V

 

 

0.4

 

 

0.4

V

 

 

 

 

 

 

 

 

 

VIH

Input HIGH

 

 

VCC = 2.2V to 2.7V

 

 

1.8

 

VCC + 0.3V

1.8

 

VCC + 0.3V

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC= 2.7V to 3.6V

 

 

2.2

 

VCC + 0.3V

2.2

 

VCC + 0.3V

V

 

 

 

 

 

 

 

 

 

VIL

Input LOW

 

 

VCC = 2.2V to 2.7V

 

 

–0.3

 

0.6

–0.3

 

0.6

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC= 2.7V to 3.6V

 

 

–0.3

 

0.8

–0.3

 

0.8

V

 

 

 

 

 

 

 

 

 

IIX

Input Leakage

GND < VI < VCC

Ind’l

 

–1

 

+1

–1

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-A[9]

 

 

 

 

–1

 

+1

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-E[9]

 

 

 

 

–4

 

+4

A

IOZ

Output

 

 

GND < VO

< VCC,

Ind’l

 

–1

 

+1

–1

 

+1

A

 

Leakage

 

 

Output Disabled

 

 

 

 

 

 

 

 

 

 

 

 

Auto-A[9]

 

 

 

 

–1

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-E[9]

 

 

 

 

–4

 

+4

A

ICC

VCC Operating

f = fMAX = 1/tRC

VCC = VCCmax

 

10

20

 

8

15

mA

 

Supply

 

 

 

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

1.5

3

 

1.5

3

mA

 

Current

 

 

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

 

 

ISB1

Automatic

 

 

 

 

> VCC0.2V,

Ind’l

LL

 

 

8

 

 

8

A

CE

CE

 

 

 

 

 

Power-Down

 

 

VIN>VCC–0.2V, VIN<0.2V)

 

 

 

 

 

 

 

 

 

 

 

 

[9]

LL

 

 

 

 

 

8

 

 

Current —

 

 

f = fMAX (Address and

Auto-A

 

 

 

 

 

 

 

 

 

Auto-E[9]

L

 

 

 

 

 

25

 

 

CMOS Inputs

 

 

Data Only),

 

 

 

 

 

 

 

 

 

 

 

f = 0 (OE,

WE,

 

BHE

and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BLE),

VCC = 3.60V

 

 

 

 

 

 

 

 

 

ISB2

Automatic

 

 

 

 

> VCC

– 0.2V,

Ind’l

LL

 

 

8

 

 

8

A

CE

 

 

CE

 

 

 

 

 

Power-Down

 

 

VIN > VCC

– 0.2V or

 

 

 

 

 

 

 

 

 

 

 

 

[9]

LL

 

 

 

 

 

8

 

 

Current —

 

 

VIN < 0.2V,

Auto-A

 

 

 

 

 

 

 

CMOS Inputs

 

 

f = 0, VCC = 3.60V

Auto-E[9]

L

 

 

 

 

 

25

 

Notes:

6.VIL(min.) = –2.0V for pulse durations less than 20 ns.

7.VIH(max.) = VCC + 0.75V for pulse durations less than 20 ns.

8.Full device AC operation assumes a 100-s ramp time from 0 to VCC(min) and 200-s wait time after VCC stabilization.

9.Auto-A is available in –70 and Auto-E is available in –55.

Document #: 38-05340 Rev. *F

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1Product Portfolio Pin Configuration2, 3Electrical Characteristics Over the Operating Range Maximum RatingsOperating Range Data Retention Waveform13 Data Retention Characteristics Over the Operating RangeThermal Resistance10 AC Test Loads and Waveforms10Write Cycle Switching Characteristics Over the Operating Range1445 ns 55 ns 70 ns Parameter Description Min Min Max Unit Read CycleSwitching Waveforms Read Cycle 1 Address Transition Controlled18Read Cycle No OE Controlled19 Write Cycle No WE Controlled17, 21 Write Cycle No CE Controlled17, 21Data I/O Write Cycle No WE Controlled, OE LOW22 Write Cycle No BHE/BLE Controlled, OE LOW22DATAI/O Data Inputs/Outputs Mode Power Ordering InformationBHE BLE Ball Vfbga 6 x 8 x 1 mm Package DiagramPin Tsop II Issue Date Orig. Description of Change Document HistoryREV ECN no