Cypress CY62147DV30 manual Thermal Resistance10, AC Test Loads and Waveforms10, Vfbga Tsop

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CY62147DV30

Capacitance (for all packages)[10]

Parameter

 

Description

Test Conditions

 

Max.

 

Unit

 

CIN

 

Input Capacitance

 

TA = 25°C, f = 1 MHz,

 

10

 

pF

 

 

 

 

 

VCC = VCC(typ)

 

 

 

 

 

 

COUT

 

Output Capacitance

 

 

10

 

pF

 

Thermal Resistance[10]

 

 

 

 

 

 

 

 

 

Parameter

Description

 

Test Conditions

VFBGA

TSOP II

 

Unit

ΘJA

Thermal Resistance

 

Still Air, soldered on a 3 × 4.5 inch, four-layer

72

75.13

 

°C/W

 

(Junction to Ambient)

printed circuit board

 

 

 

 

 

ΘJC

Thermal Resistance

 

 

 

 

8.86

8.95

 

°C/W

 

(Junction to Case)

 

 

 

 

 

 

 

 

 

AC Test Loads and Waveforms[10]

R1

VCC

OUTPUT

50 pF

INCLUDING

JIG AND

SCOPE

VCC

 

 

 

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

90%

 

10%

 

 

 

 

 

 

90%

 

 

 

 

 

 

 

10%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Fall Time = 1 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

R2 Rise Time = 1 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Equivalent to:

 

THÉVENIN EQUIVALENT

 

 

 

 

 

 

 

 

 

 

 

 

RTH

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

Parameters

2.50V

3.0V

Unit

R1

16667

1103

 

 

 

 

R2

15385

1554

 

 

 

 

RTH

8000

645

VTH

1.20

1.75

V

Data Retention Characteristics (Over the Operating Range)

Parameter

Description

Conditions

Min.

Typ.[5]

Max.

Unit

VDR

VCC for Data Retention

 

 

1.5

 

 

V

ICCDR

Data Retention Current

VCC= 1.5V

L (Auto-E)

 

 

15

A

 

 

CE > VCC – 0.2V,

LL (Ind’l/Auto-A)

 

 

6

 

 

 

VIN > VCC – 0.2V or

 

 

 

 

 

 

 

VIN < 0.2V

 

 

 

 

 

tCDR[10]

Chip Deselect to Data Retention

 

 

0

 

 

ns

 

Time

 

 

 

 

 

 

tR[12]

Operation Recovery Time

 

 

tRC

 

 

ns

Data Retention Waveform[13]

 

VCC(min)

DATA RETENTION MODE

VCC(min)

VCC

VDR > 1.5 V

CE or

tCDR

 

tR

BHE.BLE

 

 

 

Notes:

10.Tested initially and after any design or process changes that may affect these parameters.

11.Test condition for the 45-ns part is a load capacitance of 30 pF.

12.Full device operation requires linear VCC ramp from VDR to VCC(min.) > 100 s or stable at VCC(min.) > 100 s.

13.BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

Document #: 38-05340 Rev. *F

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configuration2, 3 Product PortfolioMaximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Data Retention Characteristics Over the Operating Range Thermal Resistance10AC Test Loads and Waveforms10 Data Retention Waveform13Switching Characteristics Over the Operating Range14 45 ns 55 ns 70 ns Parameter Description MinMin Max Unit Read Cycle Write CycleRead Cycle 1 Address Transition Controlled18 Switching WaveformsRead Cycle No OE Controlled19 Write Cycle No CE Controlled17, 21 Write Cycle No WE Controlled17, 21Data I/O Write Cycle No BHE/BLE Controlled, OE LOW22 Write Cycle No WE Controlled, OE LOW22DATAI/O Data Ordering Information Inputs/Outputs Mode PowerBHE BLE Package Diagram Ball Vfbga 6 x 8 x 1 mmPin Tsop II Document History Issue Date Orig. Description of ChangeREV ECN no