Cypress CY62146EV30 manual Maximum Ratings, Electrical Characteristics Over the Operating Range

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CY62146EV30 MoBL®

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

 

 

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

 

 

 

 

Potential

–0.3V to + 3.9V

(VCCmax + 0.3V)

DC Voltage Applied to Outputs

 

 

 

in High-Z State [5, 6]

–0.3V to 3.9V

(V

CCmax

+ 0.3V)

 

 

 

 

Electrical Characteristics (Over the Operating Range)

DC Input Voltage [5, 6]

–0.3V to 3.9V (V

CC max

+ 0.3V)

 

 

 

 

 

Output Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

 

 

>2001V

(per MIL-STD-883, Method 3015)

 

 

 

Latch-up Current

.....................................................

 

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Ambient

 

VCC [7]

Device

Range

 

Temperature

 

CY62146EV30

Industrial

 

–40°C to +85°C

 

2.2V to 3.6V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

45 ns

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

 

 

Test Conditions

Min

Typ [2]

Max

Unit

VOH

Output HIGH Voltage

 

IOH = –0.1 mA

 

 

 

 

2.0

 

 

V

 

 

 

IOH = –1.0 mA, VCC > 2.70V

2.4

 

 

V

VOL

Output LOW Voltage

IOL = 0.1 mA

 

 

 

 

 

 

0.4

V

 

 

 

IOL = 2.1 mA, VCC > 2.70V

 

 

0.4

V

VIH

Input HIGH Voltage

 

VCC = 2.2V to 2.7V

 

 

 

 

1.8

 

VCC + 0.3

V

 

 

 

VCC= 2.7V to 3.6V

 

 

 

 

2.2

 

VCC + 0.3

V

VIL

Input LOW Voltage

VCC = 2.2V to 2.7V

 

 

 

 

–0.3

 

0.6

V

 

 

 

VCC= 2.7V to 3.6V

 

 

 

 

–0.3

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

 

 

 

–1

 

+1

A

IOZ

Output Leakage Current

GND < VO < VCC, Output Disabled

–1

 

+1

A

ICC

VCC Operating Supply Current

 

f = fmax = 1/tRC

VCC = VCC(max),

 

15

20

mA

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

f = 1 MHz

 

2

2.5

 

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

ISB1

Automatic CE Power down

 

 

> VCC0.2V,

 

 

 

 

 

1

7

A

 

CE

 

 

 

 

 

Current — CMOS Inputs

 

VIN > VCC–0.2V or VIN < 0.2V

 

 

 

 

 

 

 

f = fmax (Address and Data Only),

 

 

 

 

 

 

 

f = 0 (OE,

 

 

 

 

and

 

 

 

 

 

 

 

 

 

BHE,

BLE

WE), VCC = 3.60V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB2 [8]

Automatic CE Power down

 

 

> VCC – 0.2V,

 

 

 

 

 

1

7

A

 

CE

 

 

 

 

 

Current — CMOS Inputs

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

f = 0, VCC = 3.60V

 

 

 

 

 

 

 

 

Notes:

5.VIL(min) = –2.0V for pulse durations less than 20 ns.

6.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7.Full device AC operation assumes a minimum of 100 s ramp time from 0 to Vcc(min) and 200 s wait time after Vcc stabilization.

8.Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

Document #: 38-05567 Rev. *C

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Contents Features Functional DescriptionProduct Portfolio Top View Logic Block DiagramPin Configurations 3 Ball Vfbga Pin TsopElectrical Characteristics Over the Operating Range Maximum RatingsOperating Range Data Retention Waveform Data Retention Characteristics Over the Operating RangeThermal Resistance AC Test Loads and WaveformsWrite Cycle 45 ns Parameter Description Min Max Unit Read CycleSwitching Waveforms AddressData OUT Previous Data Valid Write Cycle No CE Controlled 15, 19 Write Cycle No WE Controlled 15, 19Write Cycle No WE Controlled, OE LOW BHE BLE Inputs/Outputs Mode PowerTruth Table Ordering InformationBall Vfbga 6 x 8 x 1 mm Package DiagramsPin Tsop II Issue Date Orig. Description of Change Document HistoryREV ECN no