CY14E256L

AutoStore or Power Up RECALL

 

 

 

 

Parameter

Alt

Description

CY14E256L

 

Unit

Min

Max

 

 

 

 

 

 

 

 

 

tHRECALL [15]

tRESTORE

Power up RECALL Duration

 

550

 

μs

tSTORE [16]

tHLHZ

STORE Cycle Duration

 

10

 

ms

tDELAY [16]

tHLQZ , tBLQZ

Time Allowed to Complete SRAM Cycle

1

 

 

μs

VSWITCH

 

 

Low Voltage Trigger Level

4.0

4.5

 

V

VRESET

 

 

Low Voltage Reset Level

 

3.6

 

V

tVCCRISE

 

 

VCC Rise Time

150

 

 

μs

tVSBL[13]

 

 

Low Voltage Trigger (VSWITCH) to

HSB

low

 

300

 

ns

Switching Waveforms

Figure 11. AutoStore/Power Up RECALL

WE

Notes

15.tHRECALL starts from the time VCC rises above VSWITCH.

16.CE and OE low and WE high for output behavior.

17.HSB is asserted low for 1us when VCAP drops through VSWITCH. If an SRAM WRITE has not taken place since the last nonvolatile cycle, HSB is released and no store takes place.

Document Number: 001-06968 Rev. *F

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Cypress manual AutoStore or Power Up Recall, Parameter Alt Description CY14E256L Unit Min Max