CY62128EV30

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground

 

 

 

Potential

–0.3V to VCC(max) + 0.3V

DC Voltage Applied to Outputs

 

 

 

in High-Z State[4, 5]

–0.3V to V

CC(max)

+ 0.3V

DC Input Voltage[4,5]

 

 

–0.3V to V

CC(max)

+ 0.3V

 

 

 

Output Current into Outputs (LOW)

............................. 20 mA

Static Discharge Voltage

> 2001V

(MIL-STD-883, Method 3015)

 

Latch up Current

> 200 mA

Operating Range

Device

Range

Ambient

VCC

[6]

Temperature

 

CY62128EV30LL

Ind’l/Auto-A

–40°C to +85°C

2.2V to

 

 

 

3.6V

 

Auto-E

–40°C to +125°C

 

 

 

 

 

 

 

 

Electrical Characteristics

(Over the Operating Range)

Parameter

Description

 

 

 

Test Conditions

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

 

 

 

Min

Typ[3]

Max

Min

Typ[3]

Max

 

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

 

IOH = –0.1 mA

 

 

2.0

 

 

2.0

 

 

V

 

 

 

IOH = –1.0 mA, VCC > 2.70V

2.4

 

 

2.4

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

VOL

Output LOW Voltage

IOL = 0.1 mA

 

 

 

 

0.4

 

 

0.4

V

 

 

 

IOL = 2.1 mA, VCC > 2.70V

 

 

0.4

 

 

0.4

V

VIH

Input HIGH Voltage

 

VCC = 2.2V to 2.7V

 

1.8

 

VCC +

1.8

 

VCC +

V

 

 

 

 

 

 

 

 

 

 

 

 

0.3V

 

 

0.3V

 

 

 

 

VCC= 2.7V to 3.6V

 

2.2

 

VCC +

2.2

 

VCC +

V

 

 

 

 

 

 

 

 

 

 

 

 

0.3V

 

 

0.3V

 

VIL

Input LOW Voltage

VCC = 2.2V to 2.7V

 

–0.3

 

0.6

–0.3

 

0.6

V

 

 

 

VCC= 2.7V to 3.6V

 

–0.3

 

0.8

–0.3

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

 

–1

 

+1

–4

 

+4

μA

IOZ

Output Leakage Current

GND < VO < VCC, Output Disabled

–1

 

+1

–4

 

+4

μA

ICC

VCC Operating Supply

 

f = fmax = 1/tRC

VCC

= VCCmax

 

11

16

 

11

35

mA

 

Current

 

 

 

IOUT

= 0 mA

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

1.3

2.0

 

1.3

4.0

mA

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

 

 

ISB1

Automatic CE

 

 

1 > VCC0.2V, CE2

< 0.2V

 

1

4

 

1

35

μA

 

CE

 

Power down

 

VIN > VCC–0.2V, VIN < 0.2V)

 

 

 

 

 

 

 

 

Current — CMOS Inputs

 

f = fmax

(Address and Data Only),

 

 

 

 

 

 

 

 

 

 

 

 

and WE), VCC = 3.60V

 

 

 

 

 

 

 

 

 

 

f = 0 (OE

 

 

 

 

 

 

 

ISB2[7]

Automatic CE

 

 

1 > VCC – 0.2V, CE2 < 0.2V

 

1

4

 

1

30

μA

 

CE

 

Power down

 

VIN > VCC

– 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

Current — CMOS Inputs

 

f = 0, VCC

= 3.60V

 

 

 

 

 

 

 

 

Notes

4.VIL(min) = –2.0V for pulse durations less than 20 ns.

5.VIH(max) = VCC+0.75V for pulse durations less than 20 ns.

6.Full device AC operation assumes a 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

7.Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

Document #: 38-05579 Rev. *D

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Cypress CY62128EV30 manual Maximum Ratings, Operating Range, Electrical Characteristics, Device Range Ambient, Gnd Vi Vcc

CY62128EV30 specifications

The Cypress CY62128EV30 is a high-performance CMOS SRAM (Static Random Access Memory) device that is widely used in various applications due to its advanced technology and robust characteristics. As a 1-megabit SRAM, it features a 128K x 8 bit organization, providing ample storage capacity for a range of modern electronic devices.

One of the key features of the CY62128EV30 is its fast access time, with read cycle times available in the range of 30 to 70 nanoseconds. This rapid access speed is essential for applications that require quick data retrieval, making it ideal for use in high-speed computing environments. Additionally, it boasts a low power consumption profile, typically operating at 2.7V to 3.6V, allowing it to meet the demands of power-sensitive applications while ensuring energy efficiency.

In terms of technology, the CY62128EV30 utilizes advanced CMOS processes that contribute to its smaller footprint and higher reliability. The device includes a full asynchronous design, allowing for simple interface with other digital logic components without the need for complicated timing signals. This characteristic simplifies the overall system design, making it easier to integrate into various circuit configurations.

The CY62128EV30 also offers a wide operational temperature range, typically from -40°C to +85°C, which enhances its suitability for use in harsh environments or industrial applications. This durability ensures that the device maintains its performance specifications even under extreme conditions.

Moreover, the device features a tri-state output and supports both read and write operations with a single chip select pin, enhancing its versatility in multiple configurations. The ability to easily interface in a variety of systems makes it a preferred choice for designs requiring flexible memory solutions.

The CY62128EV30 is compatible with standard microprocessor architectures, making it ideal for use in applications such as networking equipment, telecommunications, consumer electronics, and embedded systems. Its reliability, combined with efficient power management and fast access speeds, make it a trusted solution in the fast-evolving technology landscape.

In conclusion, the Cypress CY62128EV30 stands out due to its combination of speed, power efficiency, and operational versatility, making it a valuable component in contemporary electronic design. Its cutting-edge technology and features cater to the growing demands of high-performance applications across various industries.