CY62128EV30

Data Retention Waveform [10]

 

 

 

 

 

 

VCC(min)

DATA RETENTION MODE

VCC(min)

V

CC

V

> 1.5V

 

tCDR

DR

 

tR

 

 

 

 

CE

 

 

 

 

Switching Characteristics

(Over the Operating Range)[10, 11]

Parameter

 

 

 

 

Description

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

 

 

 

 

Min

Max

Min

Max

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

45

 

55

 

ns

tAA

 

Address to Data Valid

 

45

 

55

ns

tOHA

 

Data Hold from Address Change

10

 

10

 

ns

tACE

 

 

 

 

LOW to Data Valid

 

45

 

55

ns

CE

 

 

tDOE

 

 

 

 

LOW to Data Valid

 

22

 

25

ns

OE

 

 

tLZOE

 

 

 

 

LOW to Low Z[12]

5

 

5

 

ns

OE

 

 

tHZOE

 

 

 

 

HIGH to High Z[12,13]

 

18

 

20

ns

OE

 

 

t

 

 

 

LOW to Low Z[12]

10

 

10

 

ns

 

CE

 

 

LZCE

 

 

 

 

 

 

 

 

 

 

t

 

 

 

HIGH to High Z[12, 13]

 

18

 

20

ns

CE

 

 

HZCE

 

 

 

 

 

 

 

 

 

 

tPU

 

 

 

LOW to Power Up

0

 

0

 

ns

 

CE

 

 

tPD

 

 

 

HIGH to Power Up

 

45

 

55

ns

CE

 

 

Write Cycle[14]

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

45

 

55

 

ns

tSCE

 

 

 

LOW to Write End

35

 

40

 

ns

CE

 

 

tAW

 

Address Setup to Write End

35

 

40

 

ns

tHA

 

Address Hold from Write End

0

 

0

 

ns

tSA

 

Address Setup to Write Start

0

 

0

 

ns

tPWE

 

 

 

 

Pulse Width

35

 

40

 

ns

 

WE

 

 

tSD

 

Data Setup to Write End

25

 

25

 

ns

tHD

 

Data Hold from Write End

0

 

0

 

ns

t

 

 

 

 

LOW to High Z[12, 13]

 

18

 

20

ns

WE

 

 

HZWE

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

HIGH to Low Z[12]

10

 

10

 

ns

WE

 

 

LZWE

 

 

 

 

 

 

 

 

 

 

Notes

10.CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH.

11.Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” on page 4.

12.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

13.tHZOE, tHZCE, and tHZWE transitions are measured when the output enter a high impedance state.

14.The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.

Document #: 38-05579 Rev. *D

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Cypress CY62128EV30 manual Switching Characteristics, Read Cycle, Write Cycle

CY62128EV30 specifications

The Cypress CY62128EV30 is a high-performance CMOS SRAM (Static Random Access Memory) device that is widely used in various applications due to its advanced technology and robust characteristics. As a 1-megabit SRAM, it features a 128K x 8 bit organization, providing ample storage capacity for a range of modern electronic devices.

One of the key features of the CY62128EV30 is its fast access time, with read cycle times available in the range of 30 to 70 nanoseconds. This rapid access speed is essential for applications that require quick data retrieval, making it ideal for use in high-speed computing environments. Additionally, it boasts a low power consumption profile, typically operating at 2.7V to 3.6V, allowing it to meet the demands of power-sensitive applications while ensuring energy efficiency.

In terms of technology, the CY62128EV30 utilizes advanced CMOS processes that contribute to its smaller footprint and higher reliability. The device includes a full asynchronous design, allowing for simple interface with other digital logic components without the need for complicated timing signals. This characteristic simplifies the overall system design, making it easier to integrate into various circuit configurations.

The CY62128EV30 also offers a wide operational temperature range, typically from -40°C to +85°C, which enhances its suitability for use in harsh environments or industrial applications. This durability ensures that the device maintains its performance specifications even under extreme conditions.

Moreover, the device features a tri-state output and supports both read and write operations with a single chip select pin, enhancing its versatility in multiple configurations. The ability to easily interface in a variety of systems makes it a preferred choice for designs requiring flexible memory solutions.

The CY62128EV30 is compatible with standard microprocessor architectures, making it ideal for use in applications such as networking equipment, telecommunications, consumer electronics, and embedded systems. Its reliability, combined with efficient power management and fast access speeds, make it a trusted solution in the fast-evolving technology landscape.

In conclusion, the Cypress CY62128EV30 stands out due to its combination of speed, power efficiency, and operational versatility, making it a valuable component in contemporary electronic design. Its cutting-edge technology and features cater to the growing demands of high-performance applications across various industries.