Cypress CY62128EV30 manual Switching Characteristics, Data Retention Waveform

Models: CY62128EV30

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Data Retention Waveform [10]

CY62128EV30

Data Retention Waveform [10]

 

 

 

 

 

 

VCC(min)

DATA RETENTION MODE

VCC(min)

V

CC

V

> 1.5V

 

tCDR

DR

 

tR

 

 

 

 

CE

 

 

 

 

Switching Characteristics

(Over the Operating Range)[10, 11]

Parameter

 

 

 

 

Description

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

 

 

 

 

Min

Max

Min

Max

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

45

 

55

 

ns

tAA

 

Address to Data Valid

 

45

 

55

ns

tOHA

 

Data Hold from Address Change

10

 

10

 

ns

tACE

 

 

 

 

LOW to Data Valid

 

45

 

55

ns

CE

 

 

tDOE

 

 

 

 

LOW to Data Valid

 

22

 

25

ns

OE

 

 

tLZOE

 

 

 

 

LOW to Low Z[12]

5

 

5

 

ns

OE

 

 

tHZOE

 

 

 

 

HIGH to High Z[12,13]

 

18

 

20

ns

OE

 

 

t

 

 

 

LOW to Low Z[12]

10

 

10

 

ns

 

CE

 

 

LZCE

 

 

 

 

 

 

 

 

 

 

t

 

 

 

HIGH to High Z[12, 13]

 

18

 

20

ns

CE

 

 

HZCE

 

 

 

 

 

 

 

 

 

 

tPU

 

 

 

LOW to Power Up

0

 

0

 

ns

 

CE

 

 

tPD

 

 

 

HIGH to Power Up

 

45

 

55

ns

CE

 

 

Write Cycle[14]

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

45

 

55

 

ns

tSCE

 

 

 

LOW to Write End

35

 

40

 

ns

CE

 

 

tAW

 

Address Setup to Write End

35

 

40

 

ns

tHA

 

Address Hold from Write End

0

 

0

 

ns

tSA

 

Address Setup to Write Start

0

 

0

 

ns

tPWE

 

 

 

 

Pulse Width

35

 

40

 

ns

 

WE

 

 

tSD

 

Data Setup to Write End

25

 

25

 

ns

tHD

 

Data Hold from Write End

0

 

0

 

ns

t

 

 

 

 

LOW to High Z[12, 13]

 

18

 

20

ns

WE

 

 

HZWE

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

HIGH to Low Z[12]

10

 

10

 

ns

WE

 

 

LZWE

 

 

 

 

 

 

 

 

 

 

Notes

10.CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH.

11.Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” on page 4.

12.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

13.tHZOE, tHZCE, and tHZWE transitions are measured when the output enter a high impedance state.

14.The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.

Document #: 38-05579 Rev. *D

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Cypress CY62128EV30 manual Switching Characteristics, Data Retention Waveform