CY62128EV30

Switching Waveforms

Figure 2. Read Cycle 1 (Address transition controlled) [15, 16]

tRC

ADDRESS

tAA

tOHA

DATA OUT

PREVIOUS DATA VALID

 

 

 

 

DATA VALID

 

 

 

 

 

 

 

 

 

Figure 3. Read Cycle No. 2 (OE controlled) [10, 16, 17]

ADDRESS

 

 

 

 

tRC

 

 

CE

 

 

 

 

tACE

 

 

OE

 

tHZOE

 

 

tDOE

 

 

tHZCE

 

 

tLZOE

HIGH

 

HIGH IMPEDANCE

 

IMPEDANCE

DATA OUT

DATA VALID

 

 

tLZCE

 

 

 

tPD

 

V

tPU

ICC

CC

50%

 

50%

SUPPLY

 

CURRENT

 

 

ISB

 

Figure 4. Write Cycle No. 1 (WE controlled) [10, 15, 18, 19]

 

 

 

 

tWC

 

ADDRESS

 

 

 

 

 

tSCE

 

CE

 

 

 

 

tAW

 

tHA

 

tSA

tPWE

 

WE

 

 

 

OE

 

 

 

 

 

tSD

t

 

 

 

HD

DATA IO

NOTE 20

DATA VALID

 

 

tHZOE

 

 

Notes

15.The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.

16.WE is HIGH for read cycle.

17.Address valid before or similar to CE1 transition LOW and CE2 transition HIGH.

18.Data IO is high impedance if OE = VIH.

19.If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state.

20.During this period, the IOs are in output state. Do not apply input signals.

Document #: 38-05579 Rev. *D

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Cypress CY62128EV30 manual Switching Waveforms, Read Cycle 1 Address transition controlled 15

CY62128EV30 specifications

The Cypress CY62128EV30 is a high-performance CMOS SRAM (Static Random Access Memory) device that is widely used in various applications due to its advanced technology and robust characteristics. As a 1-megabit SRAM, it features a 128K x 8 bit organization, providing ample storage capacity for a range of modern electronic devices.

One of the key features of the CY62128EV30 is its fast access time, with read cycle times available in the range of 30 to 70 nanoseconds. This rapid access speed is essential for applications that require quick data retrieval, making it ideal for use in high-speed computing environments. Additionally, it boasts a low power consumption profile, typically operating at 2.7V to 3.6V, allowing it to meet the demands of power-sensitive applications while ensuring energy efficiency.

In terms of technology, the CY62128EV30 utilizes advanced CMOS processes that contribute to its smaller footprint and higher reliability. The device includes a full asynchronous design, allowing for simple interface with other digital logic components without the need for complicated timing signals. This characteristic simplifies the overall system design, making it easier to integrate into various circuit configurations.

The CY62128EV30 also offers a wide operational temperature range, typically from -40°C to +85°C, which enhances its suitability for use in harsh environments or industrial applications. This durability ensures that the device maintains its performance specifications even under extreme conditions.

Moreover, the device features a tri-state output and supports both read and write operations with a single chip select pin, enhancing its versatility in multiple configurations. The ability to easily interface in a variety of systems makes it a preferred choice for designs requiring flexible memory solutions.

The CY62128EV30 is compatible with standard microprocessor architectures, making it ideal for use in applications such as networking equipment, telecommunications, consumer electronics, and embedded systems. Its reliability, combined with efficient power management and fast access speeds, make it a trusted solution in the fast-evolving technology landscape.

In conclusion, the Cypress CY62128EV30 stands out due to its combination of speed, power efficiency, and operational versatility, making it a valuable component in contemporary electronic design. Its cutting-edge technology and features cater to the growing demands of high-performance applications across various industries.