Cypress CY62128EV30 manual Capacitance, Data Retention Characteristics

CY62128EV30

Capacitance

(For all packages)[8]

Parameter			Description		Test Conditions		Max		Unit
CIN		Input Capacitance			TA = 25°C, f = 1 MHz,		10		pF
					VCC = VCC(typ)
COUT		Output Capacitance					10		pF
Thermal Resistance
Parameter	Description			Test Conditions		TSOP I	SOIC	STSOP	Unit
ΘJA	Thermal Resistance			Still Air, soldered on a 3 x 4.5 inch,		33.01	48.67	32.56	°C/W
	(Junction to Ambient)			two-layer printed circuit board
ΘJC	Thermal Resistance					3.42	25.86	3.59	°C/W
	(Junction to Case)

R1

VCC

Figure 1. AC Test Loads and Waveforms

ALL INPUT PULSES

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

		VCC
	10%				90%
R2
		GND
	Rise Time = 1 V/ns
Equivalent to:	THEVENIN EQUIVALENT
OUTPUT			RTH	V

90%

10%

Fall Time = 1 V/ns

Parameters	2.50V	3.0V	Unit
R1	16667	1103	Ω
R2	15385	1554	Ω
RTH	8000	645	Ω
VTH	1.20	1.75	V

Data Retention Characteristics

(Over the Operating Range)

Parameter	Description		Conditions			Min		Typ[3]	Max	Unit
VDR	VCC for Data Retention					1.5				V
ICCDR[7]	Data Retention Current	VCC	= 1.5V,		Ind’l/Auto-A				3	μA
		CE1	> VCC − 0.2V or CE2	< 0.2V,
					Auto-E				30	μA
		VIN > VCC − 0.2V or VIN < 0.2V
tCDR[8]	Chip Deselect to Data Retention						0			ns
	Time
t [9]	Operation Recovery Time					t	RC			ns
R

Note

8.Tested initially and after any design or process changes that may affect these parameters.

9.Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.

Document #: 38-05579 Rev. *D Page 4 of 11

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