CY62136EV30MoBL®
Document #: 38-05569 Rev. *B Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied ...........................................–55°C to + 125°C
Supply Voltage to Ground
Potential ..............................–0.3V to 3.9V (VCC MAX + 0.3V)
DC Voltage Applied to Outputs
in High-Z State[5,6]................–0.3V to 3.9V (VCC MAX + 0.3V)
DC Input Voltage[5,6]............–0.3V to 3.9V (VCC MAX + 0.3V)
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range[7]
Device Range Ambient
Temperature VCC[7]
CY62136EV30LL Industrial –40°C to +85°C 2.2V - 3.6V
Electrical Characteristics Over the Operating Range [5, 6, 7]
Parameter Description Test Conditions
45 ns
UnitMin. Typ.[4] Max.
VOH Output HIGH
Voltage IOH = –0.1 mA VCC = 2.20V 2.0 V
IOH = –1.0 mA VCC = 2.70V 2.4 V
VOL Output LOW
Voltage IOL = 0.1 mA VCC = 2.20V 0.4 V
IOL = 2.1mA VCC = 2.70V 0.4 V
VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3 V
VCC= 2.7V to 3.6V 2.2 VCC + 0.3 V
VIL Input LOW Voltage VCC = 2.2V to 2.7V –0.3 0.6 V
VCC= 2.7V to 3.6V –0.3 0.8 V
IIX Input Leakage
Current GND < VI < VCC –1 +1 µA
IOZ Output Leakage
Current GND < VO < VCC, Output Disabled –1 +1 µA
ICC VCC Operating
Supply Current f = fMAX = 1/tRC VCC = VCCmax, IOUT = 0 mA
CMOS levels 15 20 mA
f = 1 MHz 2 2.5
ISB1 Automatic CE
Power-down
Current — CMOS
Inputs
CE > VCC−0.2V,
VIN>VCC–0.2V, VIN<0.2V)
f = fMAX (Address and Data Only),
f = 0 (OE, and WE),
VCC = 3.60V
17µA
ISB2 Automatic CE
Power-down
Current — CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V, f = 0,
VCC = 3.60V
17µA
Capacitance (for all packages)[8]
Parameter Description Test Conditions Max. Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10 pF
COUT Output Capacitance 10 pF
Notes:
5. VIL(min.) = –2.0V for pulse durations less than 20 ns.
6. VIH(max)=VCC+0.75V for pulse durations less than 20ns.
7. Full Device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after VCC stabilization.
8. Tested initially and after any design or process changes that may affect these parameters.
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