CY62146EV30 MoBL®

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

 

 

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

 

 

 

 

Potential

–0.3V to + 3.9V

(VCCmax + 0.3V)

DC Voltage Applied to Outputs

 

 

 

in High-Z State [5, 6]

–0.3V to 3.9V

(V

CCmax

+ 0.3V)

 

 

 

 

Electrical Characteristics (Over the Operating Range)

DC Input Voltage [5, 6]

–0.3V to 3.9V (V

CC max

+ 0.3V)

 

 

 

 

 

Output Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

 

 

>2001V

(per MIL-STD-883, Method 3015)

 

 

 

Latch-up Current

.....................................................

 

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Ambient

 

VCC [7]

Device

Range

 

Temperature

 

CY62146EV30

Industrial

 

–40°C to +85°C

 

2.2V to 3.6V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

45 ns

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

 

 

Test Conditions

Min

Typ [2]

Max

Unit

VOH

Output HIGH Voltage

 

IOH = –0.1 mA

 

 

 

 

2.0

 

 

V

 

 

 

IOH = –1.0 mA, VCC > 2.70V

2.4

 

 

V

VOL

Output LOW Voltage

IOL = 0.1 mA

 

 

 

 

 

 

0.4

V

 

 

 

IOL = 2.1 mA, VCC > 2.70V

 

 

0.4

V

VIH

Input HIGH Voltage

 

VCC = 2.2V to 2.7V

 

 

 

 

1.8

 

VCC + 0.3

V

 

 

 

VCC= 2.7V to 3.6V

 

 

 

 

2.2

 

VCC + 0.3

V

VIL

Input LOW Voltage

VCC = 2.2V to 2.7V

 

 

 

 

–0.3

 

0.6

V

 

 

 

VCC= 2.7V to 3.6V

 

 

 

 

–0.3

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

 

 

 

–1

 

+1

A

IOZ

Output Leakage Current

GND < VO < VCC, Output Disabled

–1

 

+1

A

ICC

VCC Operating Supply Current

 

f = fmax = 1/tRC

VCC = VCC(max),

 

15

20

mA

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

f = 1 MHz

 

2

2.5

 

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

ISB1

Automatic CE Power down

 

 

> VCC0.2V,

 

 

 

 

 

1

7

A

 

CE

 

 

 

 

 

Current — CMOS Inputs

 

VIN > VCC–0.2V or VIN < 0.2V

 

 

 

 

 

 

 

f = fmax (Address and Data Only),

 

 

 

 

 

 

 

f = 0 (OE,

 

 

 

 

and

 

 

 

 

 

 

 

 

 

BHE,

BLE

WE), VCC = 3.60V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB2 [8]

Automatic CE Power down

 

 

> VCC – 0.2V,

 

 

 

 

 

1

7

A

 

CE

 

 

 

 

 

Current — CMOS Inputs

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

f = 0, VCC = 3.60V

 

 

 

 

 

 

 

 

Notes:

5.VIL(min) = –2.0V for pulse durations less than 20 ns.

6.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7.Full device AC operation assumes a minimum of 100 s ramp time from 0 to Vcc(min) and 200 s wait time after Vcc stabilization.

8.Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

Document #: 38-05567 Rev. *C

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Cypress CY62146EV30 manual Maximum Ratings, Electrical Characteristics Over the Operating Range