CY62147DV30
Document #: 38-05340 Rev. *F Page 3 of 12

Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential......................................–0.3V to + VCC(MAX) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[6,7]..........................–0.3V to VCC(MAX) + 0.3V
DC Input Voltage[6,7]..................... –0.3V to VCC(MAX) + 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA

Operating Range

Device Range
Ambient
Temperature
[TA][9] VCC
CY62147DV30L Automotive-E –40°C to +125°C 2.20V
to
3.60V
CY62147DV30LL Industrial –40°C to +85°C
Automotive-A –40°C to +85°C
Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
–45 –55/–70
UnitMin. Typ.[5] Max. Min. Typ.[5] Max.
VOH Output HIGH
Voltage IOH = –0.1 mA VCC = 2.20V 2.0 2.0 V
IOH = –1.0 mA VCC = 2.70V 2.4 2.4 V
VOL Output LOW
Voltage IOL = 0.1 mA VCC = 2.20V 0.4 0.4 V
IOL = 2.1 mA VCC = 2.70V 0.4 0.4 V
VIH Input HIGH
Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3V 1.8 VCC + 0.3V V
VCC= 2.7V to 3.6V 2.2 VCC + 0.3V 2.2 VCC + 0.3V V
VIL Input LOW
Voltage VCC = 2.2V to 2.7V –0.3 0.6 –0.3 0.6 V
VCC= 2.7V to 3.6V –0.3 0.8 –0.3 0.8 V
IIX Input Leakage
Current GND < VI < VCC Ind’l –1 +1 –1 +1 µA
Auto-A[9] –1 +1 µA
Auto-E[9] –4 +4 µA
IOZ Output
Leakage
Current
GND < VO < VCC,
Output Disabled Ind’l –1 +1 –1 +1 µA
Auto-A[9] –1 +1 µA
Auto-E[9] –4 +4 µA
ICC VCC Operating
Supply
Current
f = fMAX = 1/tRC VCC = VCCmax
IOUT = 0 mA
CMOS levels
10 20 8 15 mA
f = 1 MHz 1.5 3 1.5 3 mA
ISB1 Automatic CE
Power-Down
Current —
CMOS Inputs
CE > VCC−0.2V,
VIN>VCC–0.2V, VIN<0.2V)
f = fMAX (Address and
Data Only),
f = 0 (OE, WE, BHE and
BLE), VCC = 3.60V
Ind’l LL 8 8 µA
Auto-A[9]LL 8
Auto-E[9]L25
ISB2 Automatic CE
Power-Down
Current —
CMOS Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or
VIN < 0.2V,
f = 0, VCC = 3.60V
Ind’l LL 8 8 µA
Auto-A[9]LL 8
Auto-E[9]L25
Notes:
6. VIL(min.) = –2.0V for pulse durations less than 20 ns.
7. VIH(max.) = VCC + 0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-µs ramp time from 0 to VCC(min) and 200-µs wait time after VCC stabilization.
9. Auto-A is available in –70 and Auto-E is available in –55.
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