CY62157CV30/33

Switching Characteristics Over the Operating Range [10]

 

 

 

 

 

 

 

 

 

 

 

70 ns

 

Parameter

 

 

 

 

 

 

 

 

Description

 

 

 

Unit

 

 

 

 

 

 

 

 

Min.

 

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

70

 

 

ns

tAA

 

Address to Data Valid

 

 

70

ns

tOHA

 

Data Hold from Address Change

10

 

 

ns

tACE

 

 

1 LOW and CE2 HIGH to Data Valid

 

 

70

ns

CE

 

tDOE

 

 

 

 

LOW to Data Valid

 

 

35

ns

OE

 

t

 

 

 

 

LOW to Low-Z[11]

5

 

 

ns

OE

 

 

LZOE

 

 

 

 

 

 

 

 

 

 

 

 

 

tHZOE

 

 

 

 

HIGH to High-Z[11, 12]

 

 

25

ns

OE

 

tLZCE

 

 

1 LOW and CE2 HIGH to Low-Z[11]

10

 

 

ns

CE

 

 

t

 

 

 

 

 

HIGH or CE

LOW to High-Z[11, 12]

 

 

25

ns

CE

1

 

HZCE

 

 

 

 

 

2

 

 

 

 

tPU

 

 

1 LOW and CE2 HIGH to Power-up

0

 

 

ns

CE

 

 

tPD

 

 

1 HIGH or CE2 LOW to Power-down

 

 

70

ns

CE

 

tDBE

 

 

 

 

 

 

 

 

 

 

 

70

ns

BHE/BLE LOW to Data Valid

 

tLZBE[11]

 

 

 

 

 

 

 

 

 

5

 

 

ns

BHE/BLE LOW to Low-Z[13]

 

 

tHZBE

 

 

 

 

 

 

 

 

 

 

 

25

ns

BHE/BLE HIGH to High-Z[11, 12]

 

Write Cycle[14]

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

70

 

 

ns

tSCE

 

 

1 LOW and CE2 HIGH to Write End

60

 

 

ns

CE

 

 

tAW

 

Address Set-up to Write End

60

 

 

ns

tHA

 

Address Hold from Write End

0

 

 

ns

tSA

 

Address Set-up to Write Start

0

 

 

ns

tPWE

 

 

 

 

Pulse Width

 

50

 

 

ns

WE

 

 

 

tBW

 

 

 

 

 

 

 

 

 

60

 

 

ns

BHE/BLE Pulse Width

 

 

tSD

 

Data Set-up to Write End

30

 

 

ns

tHD

 

Data Hold from Write End

0

 

 

ns

t

 

 

 

 

LOW to High-Z[11, 12]

 

 

25

ns

WE

 

HZWE

 

 

 

 

 

 

 

 

 

 

 

 

 

tLZWE

 

 

 

 

HIGH to Low-Z[11]

5

 

 

ns

WE

 

 

Notes:

10.Test conditions assume signal transition time of 5 ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH and 30-pF load capacitance.

11.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

12.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.

13.When both byte enables are toggled together this value is 10 ns.

14.The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, CE2 = VIH. All signals must be ACTIVE to initiate a Write and any of these signals can terminate a Write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the Write.

Document #: 38-05014 Rev. *F

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Cypress CY62157CV30 Switching Characteristics Over the Operating Range, ns Parameter Description Unit Min Max Read Cycle

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.