CY62157CV30/33

512K x 16 Static RAM

Features

•Temperature Ranges

—Automotive-A: –40°C to 85°C

—Automotive-E: –40°C to 125°C

•Voltage range:

—CY62157CV30: 2.7V–3.3V

—CY62157CV33: 3.0V–3.6V

•Ultra-low active power

—Typical active current: 1.5 mA @ f = 1 MHz

—Typical active current: 5.5 mA @ f = fmax

•Low standby power

•Easy memory expansion with CE1, CE2 and OE features

•Automatic power-down when deselected

•CMOS for optimum speed/power

•Available in Pb-free and non Pb-free 48-ball FBGA package

Functional Description[1]

The CY62157CV30/33 are high-performance CMOS static RAMs organized as 512K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telephones. The devices also have an automatic power-down feature that

significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW).

Writing to the device is accomplished by taking Chip Enable 1 (CE1) and Write Enable (WE) inputs LOW and Chip Enable 2

(CE2) HIGH. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18).

Reading from the device is accomplished by taking Chip Enable 1 (CE1) and Output Enable (OE) LOW and Chip Enable 2 (CE2) HIGH while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes.

The CY62157CV30/33 are available in a 48-ball FBGA package.

Logic Block Diagram

A10

 

 

 

 

 

 

 

A 9

 

 

DECODER

 

 

 

A 8

 

 

 

 

 

A 5

 

A 7

 

 

 

 

A 6

 

 

 

 

A 4

 

 

ROW

 

 

 

 

 

 

A 3

 

 

 

 

 

A 2

 

 

 

 

 

 

 

A 1

 

 

 

 

 

 

 

A 0

 

 

 

 

 

 

 

 

 

DATA IN DRIVERS

 

 

512K × 16

AMPS

 

RAM Array

SENSE

I/O0–I/O7

 

I/O8–I/O15

COLUMN DECODER

11

12

13

14

15

16

17 18

A A A A A A A A

Power -down

Circuit

BHE

BLE

BHE

WE CE2

OE CE1

BLE

CE2

CE1

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation

•

198 Champion Court • San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05014 Rev. *F

 

Revised August 31, 2006

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Cypress CY62157CV33 manual Features, Functional Description1, Logic Block Diagram, Cypress Semiconductor Corporation
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CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.
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