CY62157CV30/33
Document #: 38-05014 Rev. *F Page 3 of 13

Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature................................. –65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential...–0.5V to Vccmax + 0.5V
DC Voltage Applied to Outputs
in High-Z State[5]....................................–0.5V to VCC + 0.3V
DC Input Voltage[5].................................–0.5V to VCC + 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA

Operating Range

Device Range
Ambient
Temperature
[TA][6] VCC
CY62157CV30 Automotive-E –40°C to +125°C 2.7V – 3.3V
CY62157CV33 Automotive-A –40°C to +85°C 3.0V – 3.6V
Automotive-E –40°C to +125°C
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
CY62157CV30-70
UnitMin. Typ.[2] Max.
VOH Output HIGH Voltage IOH = –1.0 mA VCC = 2.7V 2.4 V
VOL Output LOW Voltage IOL = 2.1 mA VCC = 2.7V 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.3V V
VIL Input LOW Voltage –0.3 0.8 V
IIX Input Leakage
Current GND < VI < VCC –10 +10 µA
IOZ Output Leakage
Current GND < VO < VCC, Output Disabled –10 +10 µA
ICC VCC Operating
Supply
Current
f = fMAX = 1/tRC VCC = 3.3V
IOUT = 0 mA
CMOS Levels
715mA
f = 1 MHz 1.5 3
ISB1 Automatic CE
Power-Down
Current— CMOS
Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V
VIN > VCC – 0.2V or VIN < 0.2V,
f = fmax (Address and Data Only),
f=0 (OE
, WE, BHE and BLE)
870µA
ISB2 Automatic CE
Power-Down
Current—CMOS
Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.3V
870µA
Notes:
5. VIL(min.) = –2.0V for pulse durations less than 20 ns.
6. TA is the “Instant-On” case temperature.
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