CY62157EV18 MoBL®

8-Mbit (512K x 16) Static RAM

Features

Very high speed: 55 ns

Wide voltage range: 1.65V–2.25V

Pin Compatible with CY62157DV18 and CY62157DV20

Ultra low standby power

Typical Standby current: 2 A

Maximum Standby current: 8 A

Ultra low active power

Typical active current: 1.8 mA @ f = 1 MHz

deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:

Deselected (CE1 HIGH or CE2 LOW)

Outputs are disabled (OE HIGH)

Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or

Write operation is active (CE1 LOW, CE2 HIGH and WE LOW).

Write to the device by taking Chip Enables (CE1 LOW and CE2

Easy memory expansion with CE1, CE2 and OE features

Automatic power down when deselected

CMOS for optimum speed and power

Available in Pb-free 48-ball VFBGA package

Functional Description [1]

The CY62157EV18 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current.

This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when

HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7), is written into the location specified on the address pins (A0

through A18). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A18).

Read from the device by taking Chip Enables (CE1 LOW and

CE2 HIGH) and Output Enable (OE) LOW while forcing the

Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from memory appears on IO8 to IO15. See the “Truth Table” on page 9 for a complete description of read and write modes.

Product Portfolio

 

 

 

 

 

 

 

 

 

 

Power Dissipation

 

 

 

 

 

 

 

 

Speed

 

 

 

 

 

 

 

 

 

Product

 

VCC Range (V)

 

 

Operating ICC, (mA)

 

 

 

 

 

 

(ns)

 

 

 

Standby, ISB2 (A)

 

 

 

 

 

 

f = 1MHz

f = fmax

 

 

 

 

 

 

 

 

 

 

 

 

Min

 

Typ [2]

 

Max

 

Typ [2]

 

Max

Typ [2]

 

Max

 

Typ [2]

Max

CY62157EV18

1.65

 

1.8

 

2.25

55

1.8

 

3

18

 

25

 

2

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

1.For best practice recommendations, refer to the Cypress application note “System Design Guidelines” located at http://www.cypress.com.

2.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.

Cypress Semiconductor Corporation

• 198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05490 Rev. *D

Revised March 30, 2007

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Cypress CY62157EV18 manual Features, Functional Description, Product Portfolio

CY62157EV18 specifications

The Cypress CY62157EV18 is a highly advanced static random-access memory (SRAM) chip that has garnered significant attention in the embedded systems and high-speed applications space due to its innovative features and reliable performance. This memory device is designed to meet the rigorous demands of modern electronics by providing fast access speeds and low power consumption.

One of the main features of the CY62157EV18 is its high-density configuration, which offers a substantial memory capacity of 1 megabit (Mb). This capacity is often ideal for applications that require significant data storage without occupying too much physical space on the printed circuit board. The chip uses a 3.3V memory architecture, which enables compatibility with various voltage levels, making it versatile across different systems.

The device's access time is another standout characteristic, boasting a read access time of 10 to 15 nanoseconds. This incredibly fast access time allows for quicker data retrieval, which is crucial for real-time applications such as telecommunications, automotive electronics, and consumer devices. The design incorporates an improved write cycle time of 15 nanoseconds, ensuring that data can be written with minimal delay, further enhancing system performance.

Incorporating advanced CMOS technology, the CY62157EV18 achieves low power consumption while maintaining high-speed performance. It features a standby current of only 0.5 µA under a full ambient temperature range, which is particularly beneficial for battery-powered devices that demand energy efficiency. Additionally, with a wide operating temperature range from -40°C to 125°C, this memory chip is well-suited for industrial and automotive environments, where extreme temperatures can be a concern.

The device also includes full support for asynchronous SRAM operation, allowing for flexible interfacing with various microcontrollers and digital signal processors. With a simple interface that facilitates easy integration into existing designs, the CY62157EV18 offers designers the flexibility they need.

In conclusion, the Cypress CY62157EV18 is characterized by its high density, fast access speeds, low power consumption, and compatibility with a wide range of applications. Its array of features makes it an ideal choice for engineers looking to enhance performance in systems requiring reliable and efficient memory solutions. Whether in consumer electronics, automotive applications, or industrial controls, this SRAM chip continues to be a preferred option among developers seeking both performance and efficiency.