CY62157EV18 MoBL®

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

 

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

–0.2V to 2.45V (VCCmax + 0.2V)

Potential

DC Voltage Applied to Outputs

 

 

in High-Z State [4, 5]

–0.2V to 2.45V (V

CCmax

+ 0.2V)

 

 

 

DC Input Voltage [4, 5]

–0.2V to 2.45V (V

 

+ 0.2V)

 

CCmax

 

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

> 2001V

(in accordance with MIL-STD-883, Method 3015)

 

 

Latch-up Current

> 200 mA

Operating Range

Device

Range

Ambient

VCC

[6]

Temperature

 

CY62157EV18LL Industrial –40°C to +85°C 1.65V to 2.25V

Electrical Characteristics (Over the Operating Range)

Parameter

Description

 

 

 

 

 

Test Conditions

 

55 ns

 

Unit

 

 

 

 

 

Min

Typ [2]

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

 

IOH = –0.1 mA

VCC = 1.65V

1.4

 

 

 

V

VOL

Output LOW Voltage

 

IOL = 0.1 mA

VCC = 1.65V

 

 

 

0.2

V

VIH

Input HIGH Voltage

 

VCC = 1.65V to 2.25V

 

1.4

 

 

VCC + 0.2V

V

VIL

Input LOW Voltage

 

VCC = 1.65V to 2.25V

 

–0.2

 

 

0.4

V

IIX

Input Leakage

 

GND < VI < VCC

 

–1

 

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–1

 

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating Supply

 

f = fmax = 1/tRC

VCC = VCC(max)

 

18

 

25

mA

 

Current

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

f = 1 MHz

 

1.8

 

3

mA

 

 

 

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

ISB1

Automatic CEPower Down

 

 

1 > VCC0.2V or CE2 < 0.2V

 

2

 

8

A

CE

 

 

Current–CMOS Inputs

 

VIN > VCC – 0.2V, VIN < 0.2V)

 

 

 

 

 

 

 

 

 

f = fmax (Address and Data Only),

 

 

 

 

 

 

 

 

f = 0 (OE,

WE,

 

BHE

and

BLE),

 

VCC = VCC(max).

 

 

 

 

 

ISB2 [7]

Automatic CE Power Down

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

2

 

8

A

CE

 

 

Current–CMOS Inputs

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

f = 0, VCC = VCC(max).

 

 

 

 

 

 

Capacitance [8]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VCC = VCC(typ)

10

pF

COUT

Output Capacitance

 

10

pF

Notes

4.VIL(min) = –2.0V for pulse durations less than 20 ns.

5.VIH(max) = VCC + 0.5V for pulse durations less than 20 ns.

6.Full Device AC operation assumes a 100 s ramp time from 0 to VCC (min) and 200 s wait time after VCC stabilization.

7.Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB2 spec. Other inputs can be left floating.

8.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05490 Rev. *D

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Cypress CY62157EV18 manual Maximum Ratings, Electrical Characteristics Over the Operating Range, Capacitance

CY62157EV18 specifications

The Cypress CY62157EV18 is a highly advanced static random-access memory (SRAM) chip that has garnered significant attention in the embedded systems and high-speed applications space due to its innovative features and reliable performance. This memory device is designed to meet the rigorous demands of modern electronics by providing fast access speeds and low power consumption.

One of the main features of the CY62157EV18 is its high-density configuration, which offers a substantial memory capacity of 1 megabit (Mb). This capacity is often ideal for applications that require significant data storage without occupying too much physical space on the printed circuit board. The chip uses a 3.3V memory architecture, which enables compatibility with various voltage levels, making it versatile across different systems.

The device's access time is another standout characteristic, boasting a read access time of 10 to 15 nanoseconds. This incredibly fast access time allows for quicker data retrieval, which is crucial for real-time applications such as telecommunications, automotive electronics, and consumer devices. The design incorporates an improved write cycle time of 15 nanoseconds, ensuring that data can be written with minimal delay, further enhancing system performance.

Incorporating advanced CMOS technology, the CY62157EV18 achieves low power consumption while maintaining high-speed performance. It features a standby current of only 0.5 µA under a full ambient temperature range, which is particularly beneficial for battery-powered devices that demand energy efficiency. Additionally, with a wide operating temperature range from -40°C to 125°C, this memory chip is well-suited for industrial and automotive environments, where extreme temperatures can be a concern.

The device also includes full support for asynchronous SRAM operation, allowing for flexible interfacing with various microcontrollers and digital signal processors. With a simple interface that facilitates easy integration into existing designs, the CY62157EV18 offers designers the flexibility they need.

In conclusion, the Cypress CY62157EV18 is characterized by its high density, fast access speeds, low power consumption, and compatibility with a wide range of applications. Its array of features makes it an ideal choice for engineers looking to enhance performance in systems requiring reliable and efficient memory solutions. Whether in consumer electronics, automotive applications, or industrial controls, this SRAM chip continues to be a preferred option among developers seeking both performance and efficiency.