CY62157EV18 MoBL®

Document History

Document Title: CY62157EV18 MoBL® 8-Mbit (512K x 16) Static RAM

Document Number:38-05490

 

 

 

 

 

 

 

REV.

ECN NO.

Issue Date

 

Orig. of

Description of Change

 

Change

**

202862

See ECN

 

AJU

New Data Sheet

 

 

 

 

 

 

*A

291272

See ECN

 

SYT

Converted from Advance Information to Preliminary

 

 

 

 

 

Changed VCC Max from 2.20 to 2.25 V

 

 

 

 

 

Changed VCC stabilization time in footnote #7 from 100 s to 200 s

 

 

 

 

 

Changed ICCDR from 4 to 4.5 A

 

 

 

 

 

Changed tOHA from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bins

 

 

 

 

 

Changed tDOE from 15 and 22 ns to 18 and 22 ns for the 35 and 45 ns Speed Bins

 

 

 

 

 

respectively

 

 

 

 

 

Changed tHZOE, tHZBE and tHZWE from 12 and 15 ns to 15 and 18 ns for the 35 and 45

 

 

 

 

 

ns Speed Bins respectively

 

 

 

 

 

Changed tHZCE from 12 and 15 ns to 18 and 22 ns for the 35 and 45 ns Speed Bins

 

 

 

 

 

respectively

 

 

 

 

 

Changed tSCE, tAW, and tBW from 25 and 40 ns to 30 and 35 ns for the 35 and 45 ns

 

 

 

 

 

Speed Bins respectively

 

 

 

 

 

Changed tSD from 15 and 20 ns to 18 and 22 ns for the 35 and 45 ns Speed Bins

 

 

 

 

 

respectively

 

 

 

 

 

Added Pb-Free Package Information

 

 

 

 

 

 

*B

444306

See ECN

 

NXR

Converted from Preliminary to Final

 

 

 

 

 

Removed 35 ns speed bin

 

 

 

 

 

Removed “L” bin

 

 

 

 

 

Changed ball E3 from DNU to NC

 

 

 

 

 

Removed redundant footnote on DNU

 

 

 

 

 

Modified Maximum Ratings spec for Supply Voltage and DC Input Voltage from 2.4V to

 

 

 

 

 

2.45V

 

 

 

 

 

Changed the ICC Typ value from 16 mA to 18 mA and ICC Max value from 28 mA to 25

 

 

 

 

 

mA for test condition f = fax = 1/tRC

 

 

 

 

 

Changed the ICC Max value from 2.3 mA to 3 mA for test condition f = 1MHz

 

 

 

 

 

Changed the ISB1 and ISB2 Max value from 4.5 A to 8 A and Typ value from 0.9 A

 

 

 

 

 

to 2 A respectively

 

 

 

 

 

Updated Thermal Resistance table

 

 

 

 

 

Changed Test Load Capacitance from 50 pF to 30 pF

 

 

 

 

 

Added Typ value for ICCDR

 

 

 

 

 

Changed the ICCDR Max value from 4.5 A to 3 A

 

 

 

 

 

Corrected tR in Data Retention Characteristics from 100 s to tRC ns

 

 

 

 

 

Changed tLZOE from 3 to 5

 

 

 

 

 

Changed tLZCE from 6 to 10

 

 

 

 

 

Changed tHZCE from 22 to 18

 

 

 

 

 

Changed tLZBE from 6 to 5

 

 

 

 

 

Changed tPWE from 30 to 35

 

 

 

 

 

Changed tSD from 22 to 25

 

 

 

 

 

Changed tLZWE from 6 to 10

 

 

 

 

 

Added footnote #13

 

 

 

 

 

Updated the ordering Information and replaced the Package Name column with

 

 

 

 

 

Package Diagram

*C

571786

See ECN

 

VKN

Replaced 45ns speed bin with 55ns

 

 

 

 

 

 

Document #: 38-05490 Rev. *D

 

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Cypress manual Document History, Document Title CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM, Document Number38-05490

CY62157EV18 specifications

The Cypress CY62157EV18 is a highly advanced static random-access memory (SRAM) chip that has garnered significant attention in the embedded systems and high-speed applications space due to its innovative features and reliable performance. This memory device is designed to meet the rigorous demands of modern electronics by providing fast access speeds and low power consumption.

One of the main features of the CY62157EV18 is its high-density configuration, which offers a substantial memory capacity of 1 megabit (Mb). This capacity is often ideal for applications that require significant data storage without occupying too much physical space on the printed circuit board. The chip uses a 3.3V memory architecture, which enables compatibility with various voltage levels, making it versatile across different systems.

The device's access time is another standout characteristic, boasting a read access time of 10 to 15 nanoseconds. This incredibly fast access time allows for quicker data retrieval, which is crucial for real-time applications such as telecommunications, automotive electronics, and consumer devices. The design incorporates an improved write cycle time of 15 nanoseconds, ensuring that data can be written with minimal delay, further enhancing system performance.

Incorporating advanced CMOS technology, the CY62157EV18 achieves low power consumption while maintaining high-speed performance. It features a standby current of only 0.5 µA under a full ambient temperature range, which is particularly beneficial for battery-powered devices that demand energy efficiency. Additionally, with a wide operating temperature range from -40°C to 125°C, this memory chip is well-suited for industrial and automotive environments, where extreme temperatures can be a concern.

The device also includes full support for asynchronous SRAM operation, allowing for flexible interfacing with various microcontrollers and digital signal processors. With a simple interface that facilitates easy integration into existing designs, the CY62157EV18 offers designers the flexibility they need.

In conclusion, the Cypress CY62157EV18 is characterized by its high density, fast access speeds, low power consumption, and compatibility with a wide range of applications. Its array of features makes it an ideal choice for engineers looking to enhance performance in systems requiring reliable and efficient memory solutions. Whether in consumer electronics, automotive applications, or industrial controls, this SRAM chip continues to be a preferred option among developers seeking both performance and efficiency.