CY62157EV30 MoBL®
Document #: 38-05445 Rev. *E Page 4 of 14
Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. User guidelines are not tested.
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied ...........................................–55°C to + 125°C
Supply Voltage to Ground
Potential ................................–0.3V to 3.9V (VCCmax + 0.3V)
DC Voltage Applied to Outputs
in High-Z State [6, 7]................–0.3V to 3.9V (VCCmax + 0.3V)
DC Input Voltage [6, 7]...........–0.3V to 3.9V (VCC max + 0.3V)
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ..........................................> 2001V
(MIL-STD-883, Method 3015)
Latch up Current ....................................................> 200 mA
Operating Range
Device Range Ambient
Temperature VCC [8]
CY62157EV30LL Ind’l/Auto-A –40°C to +85°C 2.20V to
3.60V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions 45 ns (Ind’l/Auto-A) Unit
Min Typ [2] Max
VOH Output HIGH Voltage IOH = –0.1 mA 2.0 V
IOH = –1.0 mA, VCC > 2.70V 2.4 V
VOL Output LOW Voltage IOL = 0.1 mA 0.4 V
IOL = 2.1mA, VCC > 2.70V 0.4 V
VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3 V
VCC = 2.7V to 3.6V 2.2 VCC + 0.3 V
VIL Input LOW Voltage VCC = 2.2V to 2.7V –0.3 0.6 V
VCC = 2.7V to 3.6V –0.3 0.8 V
IIX Input Leakage Current GND < VI < VCC –1 +1 µA
IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 µA
ICC VCC Operating Supply Current f = f max = 1/tRC VCC = VCCmax
IOUT = 0 mA
CMOS levels
18 25
mA
f = 1 MHz 1.8 3
ISB1 Automatic CE Power Down
Current — CMOS Inputs CE1 > VCC − 0.2V, CE2 < 0.2V
VIN > VCC – 0.2V, VIN < 0.2V)
f = fmax (Address and Data Only),
f = 0 (OE, BHE, BLE and WE), VCC = 3.60V
28µA
ISB2 [9] Automatic CE Power Down
Current — CMOS Inputs CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V, f = 0, VCC = 3.60V
28µA
Capacitance [10]
Parameter Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10 pF
COUT Output Capacitance 10 pF
Notes
6. VIL(min) = –2.0V for pulse durations less than 20 ns.
7. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after VCC stabilization.
9. Only chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE (48 TSOP I only) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other
inputs can be left floating.
10.Tested initially and after any design or process changes that may affect these parameters.
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